Patents by Inventor Donald Bruner

Donald Bruner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forming a porous dielectric layer
    Patent number: 7034399
    Abstract: A dielectric layer is made porous by treating the dielectric material after metal interconnects are formed in or through that layer. The porosity lowers the dielectric constant of the dielectric material. The dielectric material may be subjected to an electron beam or a sonication bath to create the pores. The structure has smooth sidewalls for metal interconnects extending through the dielectric layer.
    Type: Grant
    Filed: February 19, 2004
    Date of Patent: April 25, 2006
    Assignee: Intel Corporation
    Inventors: Grant M. Kloster, Kevin P. O'Brien, Justin K. Brask, Michael D. Goodner, Donald Bruner
  • Forming a porous dielectric layer
    Publication number: 20040195693
    Abstract: A dielectric layer is made porous by treating the dielectric material after metal interconnects are formed in or through that layer. The porosity lowers the dielectric constant of the dielectric material. The dielectric material may be subjected to an electron beam or a sonication bath to create the pores. The structure has smooth sidewalls for metal interconnects extending through the dielectric layer.
    Type: Application
    Filed: February 19, 2004
    Publication date: October 7, 2004
    Inventors: Grant M. Kloster, Kevin P. O'Brien, Justin K. Brask, Michael D. Goodner, Donald Bruner
  • Forming a porous dielectric layer
    Patent number: 6737365
    Abstract: A dielectric layer is made porous by treating the dielectric material after metal interconnects are formed in or through that layer. The porosity lowers the dielectric constant of the dielectric material. The dielectric material may be subjected to an electron beam or a sonication bath to create the pores. The structure has smooth sidewalls for metal interconnects extending through the dielectric layer.
    Type: Grant
    Filed: March 24, 2003
    Date of Patent: May 18, 2004
    Assignee: Intel Corporation
    Inventors: Grant M. Kloster, Kevin P. O'Brien, Justin K. Brask, Michael D. Goodner, Donald Bruner