Patents by Inventor Donald Clifford Hofer

Donald Clifford Hofer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6653048
    Abstract: Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.
    Type: Grant
    Filed: May 6, 2002
    Date of Patent: November 25, 2003
    Assignee: International Business Machines Corp.
    Inventors: Phillip Joe Brock, Richard Anthony DiPietro, Donald Clifford Hofer, Ratnam Sooriyakumaran, Gregory Michael Wallraff
  • Publication number: 20020127490
    Abstract: Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.
    Type: Application
    Filed: May 6, 2002
    Publication date: September 12, 2002
    Applicant: International Business Machines Corporation
    Inventors: Phillip Joe Brock, Richard Anthony DiPietro, Donald Clifford Hofer, Ratnam Sooriyakumaran, Gregory Michael Wallraff
  • Patent number: 6444408
    Abstract: Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.
    Type: Grant
    Filed: February 28, 2000
    Date of Patent: September 3, 2002
    Assignee: International Business Machines Corporation
    Inventors: Phillip Joe Brock, Richard Anthony DiPietro, Donald Clifford Hofer, Ratnam Sooriyakumaran, Gregory Michael Wallraff
  • Patent number: 6277546
    Abstract: The present invention relates to an improved lithographic imaging process for use in the manufacture of integrated circuits. The process provides protection to the photoresist film from airborne chemical contaminants.
    Type: Grant
    Filed: November 28, 1994
    Date of Patent: August 21, 2001
    Assignee: International Business Machines Corporation
    Inventors: Gregory Breyta, Nicholas Jeffries Clecak, William Dinan Hinsberg, III, Donald Clifford Hofer, Hiroshi Ito, Scott Arthur MacDonald, Ratnam Sooriyakumaran
  • Patent number: 6165673
    Abstract: The invention relates to a polymeric, radiation-sensitive resist composition comprising (i) iodonium sulfonate radiation sensitive acid generator; (ii) a polymer; and (iii) an acid labile compound.
    Type: Grant
    Filed: March 7, 1997
    Date of Patent: December 26, 2000
    Assignee: International Business Machines Corporation
    Inventors: Gregory Breyta, Richard Anthony DiPietro, Donald Clifford Hofer, Hiroshi Ito, Robert David Allen, Juliann Opitz, Thomas I. Wallow
  • Patent number: 5985524
    Abstract: The invention relates to a process for forming bilayer resist images with a chemically-amplified, radiation-sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation-sensitive acid generator and a vinyl polymer having an acid-cleavable silylethoxy group and (ii) an organic underlayer. The bilayer resist is used in the manufacture of integrated circuits.
    Type: Grant
    Filed: March 28, 1997
    Date of Patent: November 16, 1999
    Assignee: International Business Machines Incorporated
    Inventors: Robert David Allen, Donald Clifford Hofer, Ratnam Sooriyakumaran, Gregory Michael Wallraff
  • Patent number: 5776990
    Abstract: The present invention relates to an insulating foamed polymer having a pore size less than about 1000 .ANG. made from a copolymer comprising a matrix polymer and a thermally decomposable polymer by heating the copolymer above the decomposition temperature of the decomposable polymer.
    Type: Grant
    Filed: March 11, 1993
    Date of Patent: July 7, 1998
    Assignee: International Business Machines Corporation
    Inventors: James Lupton Hedrick, Donald Clifford Hofer, Jeffrey William Labadie, Robert Bruce Prime, Thomas Paul Russell
  • Patent number: RE38282
    Abstract: The invention relates to a process for forming bilayer resist images with a chemically-amplified, radiation-sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation-sensitive acid generator and a vinyl polymer having an acid-cleavable silylethoxy group and (ii) an organic underlayer. The bilayer resist is used in the manufacture of integrated circuits.
    Type: Grant
    Filed: June 28, 2001
    Date of Patent: October 21, 2003
    Assignee: International Business Machines Corporation
    Inventors: Robert David Allen, Donald Clifford Hofer, Ratnam Sooriyakumaran, Gregory Michael Wallraff