Abstract: The invention provides a method of forming a conductive structure on an integrated circuit substrate. A metal bump, of a first material, is structured on the substrate so that the metal bump electrically contacts a metal part on the substrate. A protective layer is formed on the metal bump. The first material has a first conductivity. The protective layer is of a second material which has a second conductivity which is more than the first conductivity.

Abstract: A method and apparatus for mixing and delivering a slurry polishing and etching a semiconductor device is described wherein the slurry chemicals are mixed at the point of use. An abrasive solution and a oxidant solution are stored in separate storage containers. When the polish/etch is to begin, each of the chemicals are pumped into a mixing chamber where they are mixed so as to form a slurry. The slurry is then immediately used to polish/etch a semiconductor device. Other chemicals may be added to the slurry during the polish/etch process so as to change the polish and/or the etch rate during the polish/etch process.

Abstract: An electrochemical process for removing deposited tungsten from metal parts is described. The electrolyte solution is a basic solution containing a polydentate ligand. The solution is typically comprised of water, ammonium or alkali base, and a chelating or sequestering agent. The parts to be cleaned are biased anodically. The cathodes are preferably constructed of nickel. As hydroxide tungsten complexes and chelated tungsten complexes are formed, oxidation and dissolution of the deposited tungsten is promoted. The oxides form a thin layer on the metal parts, thus protecting the underlying metal part from the electrochemical reaction itself. Once the oxides are formed, that is, once the reaction has reached an end, the parts are removed. The oxides are wiped off, leaving a metal part surface with a high luster, thus improving the performance of the deposition equipment parts.