Abstract: Contrary to phase shifters which require complimentary polarity control voltages, a phase shifter may be driven with a single polarity control voltage. The phase shifter comprises an input node in communication with both a high pass network and a low pass network which are both in communication with an output node, where the phase shifter further comprises a first single pole double throw switch and a second single pole double throw switch configured to selectively pass an RF signal from the input node to the output node by way of one of said high pass network and said low pass network. Furthermore, the first and second single pole double throw switches are configured to select between the high pass network and the low pass network based on a single control signal having a voltage greater than or less than a reference voltage.

Abstract: An integrated circuit can comprise: a first port, a second port, and a third port; and a plurality of microwave operational amplifiers coupled to each other and the first port, the second port, and the third port. The plurality of microwave operational amplifiers can be arranged to substantially pass a signal provided to the first port to the second port while substantially isolating the signal provided to the first port from the third port; the plurality of microwave operational amplifiers can be arranged to substantially pass a signal provided to the second port to the third port while substantially isolating the signal provided to the second port from the first port; and the plurality of microwave operational amplifiers can be arranged to substantially pass a signal provided to the third port to the first port while substantially isolating the signal provided to the third port from the second port.

Abstract: Contrary to phase shifters which require complimentary polarity control voltages, a phase shifter may be driven with a single polarity control voltage. The phase shifter comprises an input node in communication with both a high pass network and a low pass network which are both in communication with an output node, where the phase shifter further comprises a first single pole double throw switch and a second single pole double throw switch configured to selectively pass an RF signal from the input node to the output node by way of one of said high pass network and said low pass network. Furthermore, the first and second single pole double throw switches are configured to select between the high pass network and the low pass network based on a single control signal having a voltage greater than or less than a reference voltage.

Abstract: Contrary to phase shifters which require complimentary polarity control voltages, a phase shifter may be driven with a single polarity control voltage. The phase shifter comprises an input node in communication with both a high pass network and a low pass network which are both in communication with an output node, where the phase shifter further comprises a first single pole double throw switch and a second single pole double throw switch configured to selectively pass an RF signal from the input node to the output node by way of one of said high pass network and said low pass network. Furthermore, the first and second single pole double throw switches are configured to select between the high pass network and the low pass network based on a single control signal having a voltage greater than or less than a reference voltage.

Abstract: An integrated circuit can comprise: a first port, a second port, and a third port; and a plurality of microwave operational amplifiers coupled to each other and the first port, the second port, and the third port. The plurality of microwave operational amplifiers can be arranged to substantially pass a signal provided to the first port to the second port while substantially isolating the signal provided to the first port from the third port; the plurality of microwave operational amplifiers can be arranged to substantially pass a signal provided to the second port to the third port while substantially isolating the signal provided to the second port from the first port; and the plurality of microwave operational amplifiers can be arranged to substantially pass a signal provided to the third port to the first port while substantially isolating the signal provided to the third port from the second port.

Abstract: An integrated circuit can comprise: a first port, a second port, and a third port; and a plurality of microwave operational amplifiers coupled to each other and the first port, the second port, and the third port. The plurality of microwave operational amplifiers can be arranged to substantially pass a signal provided to the first port to the second port while substantially isolating the signal provided to the first port from the third port; the plurality of microwave operational amplifiers can be arranged to substantially pass a signal provided to the second port to the third port while substantially isolating the signal provided to the second port from the first port; and the plurality of microwave operational amplifiers can be arranged to substantially pass a signal provided to the third port to the first port while substantially isolating the signal provided to the third port from the second port.

Abstract: In an exemplary embodiment, a phased array solid-state architecture has dual-polarized feeds and is manufactured, for example, on highly flexible silicon germanium (SiGe). The implementation of dual-polarized feeds facilitates the operation of phased arrays where the polarization can be statically or dynamically controlled on a subarray or element basis. In an exemplary embodiment, the sub-component control is configured to optimize a performance characteristic associated with polarization, such as phase or amplitude adjustment. An active phased array architecture may replace traditional distributed and GaAs implementations for the necessary functions required to operate electronically steerable phased array antennas.

Abstract: Contrary to phase shifters which require complimentary polarity control voltages, a phase shifter may be driven with a single polarity control voltage. The phase shifter comprises an input node in communication with both a high pass network and a low pass network which are both in communication with an output node, where the phase shifter further comprises a first single pole double throw switch and a second single pole double throw switch configured to selectively pass an RF signal from the input node to the output node by way of one of said high pass network and said low pass network. Furthermore, the first and second single pole double throw switches are configured to select between the high pass network and the low pass network based on a single control signal having a voltage greater than or less than a reference voltage.

Abstract: In an exemplary embodiment, a phased array solid-state architecture has dual-polarized feeds and is manufactured, for example, on highly flexible silicon germanium (SiGe). The implementation of dual-polarized feeds facilitates the operation of phased arrays where the polarization can be statically or dynamically controlled on a subarray or element basis. In an exemplary embodiment, the sub-component control is configured to optimize a performance characteristic associated with polarization, such as phase or amplitude adjustment. An active phased array architecture may replace traditional distributed and GaAs implementations for the necessary functions required to operate electronically steerable phased array antennas.

Abstract: In an exemplary embodiment, a phased array solid-state architecture has dual-polarized feeds and is manufactured, for example, on highly flexible silicon germanium (SiGe). The implementation of dual-polarized feeds facilitates the operation of phased arrays where the polarization can be statically or dynamically controlled on a subarray or element basis. In an exemplary embodiment, the sub-component control is configured to optimize a performance characteristic associated with polarization, such as phase or amplitude adjustment. An active phased array architecture may replace traditional distributed and GaAs implementations for the necessary functions required to operate electronically steerable phased array antennas.

Abstract: In an exemplary embodiment, a phased array solid-state architecture has dual-polarized feeds and is manufactured, for example, on highly flexible silicon germanium (SiGe). The implementation of dual-polarized feeds facilitates the operation of phased arrays where the polarization can be statically or dynamically controlled on a subarray or element basis. In an exemplary embodiment, the sub-component control is configured to optimize a performance characteristic associated with polarization, such as phase or amplitude adjustment. An active phased array architecture may replace traditional distributed and GaAs implementations for the necessary functions required to operate electronically steerable phased array antennas.

Abstract: A capacitive type MEMS switch having a conductor arrangement comprised of first and second RF conductors deposited on a substrate. A bridge member having a central enlarged portion is positioned over the conductor arrangement. In one embodiment, the first RF conductor has an end defining an open area in which is positioned a pull down electrode, with the end of the first RF conductor substantially surrounding the pull down electrode. In another embodiment, two opposed RF conductors, each having ends with first and second branches, define an open area in which a pull down electrode is positioned. A dielectric layer is deposited on the conductor arrangement such that when a pull down voltage is applied to the pull down electrode, the switch impedance is significantly reduced so as to allow signal propagation between the RF conductors.

Abstract: A capacitive type MEMS switch having a conductor arrangement comprised of first and second RF conductors deposited on a substrate. A bridge member having a central enlarged portion is positioned over the conductor arrangement. In one embodiment, the first RF conductor has an end defining an open area in which is positioned a pull down electrode, with the end of the first RF conductor substantially surrounding the pull down electrode. In another embodiment, two opposed RF conductors, each having ends with first and second branches, define an open area in which a pull down electrode is positioned. A dielectric layer is deposited on the conductor arrangement such that when a pull down voltage is applied to the pull down electrode, the switch impedance is significantly reduced so as to allow signal propagation between the RF conductors.