Abstract: A high power module containing high power, high frequency semiconductor switching devices and methods of operating the same that provide high power and low inductance. The module incorporates compositional, geometrical and electrical symmetry. The module also includes short internal leads, special IC chip substrates, trimmable gate lead resistances, a special composite metal/ceramic baseplate, and a special terminal conductor overlap.

Abstract: A substrate subassembly for a high power module, and methods involving the same. The substrate subassembly contains only one switching transistor and has at least one integral short terminal lead tab. The substrate subassemblies can be pretested at significant operating current, to obtain enhanced characterization and matching of mounted switching transistors. Trimmable gate lead resistances can be incorporated in the substrate subassemblies. Enhanced compositional, geometrical and electrical module symmetry is available. New module structures and method are afforded.

Abstract: A low inductance coaxial semiconductor switching module and methods of operating the same. The module can contain high power, high frequency semiconductor switching devices, operated to provide high power at low inductance. The module incorporates compositional, geometrical and electrical symmetry in a coaxial configuration. The module also includes short internal leads, a special circumferential array of substrates, a special circular gate circuit, a special circular kelvin circuit, and special terminal subassembly and special module mounting features.

Abstract: A method and apparatus for electron or laser beam welding of semiconductor subassemblies to larger terminal members, without exposing semiconductor chips in such subassemblies to detrimental welding "flash".

Abstract: A low inductance triaxial semiconductor switching module. The module permits high power semiconductor switching devices to operated at high frequency but with low inductance. The module incorporates compositional, geometrical and electrical symmetry in connection with a triaxial terminal subassembly having coplanar contact areas. The terminal subassembly is readily fabricated and assembled into the module. The module also includes short internal leads, a special circumferential array of substrates subassemblies, and a circular circuit board having gate and Kelvin circuit patterns.

Abstract: A substrate subassembly for a high power module, and methods involving the same. The substrate subassembly contains only one switching transistor and has at least one integral short terminal lead tab. The substrate subassemblies can be pretested at significant operating current, to obtain enhanced characterization and matching of mounted switching transistors. Trimmable gate lead resistances can be incorporated in the substrate subassemblies. Enhanced compositional, geometrical and electrical module symmetry is available. New module structures and method are afforded.

Abstract: A low inductance linear semiconductor switching module and methods of operating the same. The module can contain high power, high frequency semiconductor switching devices, operated to provide high power at low inductance. The module incorporates compositional, geometrical and electrical symmetry in a linear configuration. The module also includes short internal leads, special linear arrays substrates, special linear gate circuit constructions, special kelvin circuit constructions, special terminal subassemblies and special module interconnection techniques.