Patents by Inventor Donald E. Patterson
Donald E. Patterson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7786186Abstract: Optically transparent, impact-resistant solid polymer bodies are provided that are resistant to fouling by organisms such as algae, bacteria and molds. The bodies may be sheets of polymer for use as covers for optical sensors, windows or other cover glasses. The materials may be formed by solvent casting, extrusion or other processing methods.Type: GrantFiled: February 12, 2007Date of Patent: August 31, 2010Assignee: Nanohmics, Inc.Inventor: Donald E. Patterson
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Publication number: 20080194732Abstract: Optically transparent, impact-resistant solid polymer bodies are provided that are resistant to fouling by organisms such as algae, bacteria and molds. The bodies may be sheets of polymer for use as covers for optical sensors, windows or other cover glasses. The materials may be formed by solvent casting, extrusion or other processing methods.Type: ApplicationFiled: February 12, 2007Publication date: August 14, 2008Inventor: Donald E. Patterson
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Patent number: 6710534Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 percent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes.Type: GrantFiled: January 29, 2001Date of Patent: March 23, 2004Assignee: Extreme Devices, Inc.Inventors: Donald E. Patterson, Keith D. Jamison
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Patent number: 6664721Abstract: A field emitter (10) having improved electron emission properties is provided. Electron-emitting microtip protrusions (14) in an emitter layer (12) are separated from a dielectric layer (18) by an interlayer (16) that prevents substantial mixing of the dielectric (16) and the emitter layer (12) during growth of the dielectric layer (18). A conductive gate electrode layer (20) is deposited on the dielectric layer (18). For carbon-based emitters, aluminum is one of several suitable interlayers between the carbon layer and a silicon dioxide dielectric layer.Type: GrantFiled: October 6, 2000Date of Patent: December 16, 2003Assignee: Extreme Devices IncorporatedInventors: Keith D. Jamison, Donald E. Patterson, Charlie Hong, Randolph D. Schueller, David F. Hebert, Richard L. Woodin
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Publication number: 20030034721Abstract: An array of carbon-based emitters is provided having more uniform electron emission over the area of the array. This is made possible by a resistive layer that is present below each of the emission tips. Both organic and inorganic resistive layers may be grown under the emitting carbon-based material. A conductive backing layer is in contact with the resistive layer. Methods for making the improved array are provided. The methods include growth of carbon-based tips in a mold, removal of various films or portions of films by etching, and other techniques.Type: ApplicationFiled: August 20, 2001Publication date: February 20, 2003Inventors: Henry Windischmann, Randolph D. Schueller, Byron G. Zollars, Keith D. Jamison, Donald E. Patterson, Kent R. Kalar
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Patent number: 6441550Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a carbon-based body to a thickness greater than 20 micrometers, subsequently removing the substrate and then applying an electrical contact to one surface of the body. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes. The surface of the substrate may be patterned before growth of the carbon-based body to produce a patterned surface on the field emission device after the substrate is removed.Type: GrantFiled: October 12, 1998Date of Patent: August 27, 2002Assignee: Extreme Devices Inc.Inventors: Donald E. Patterson, Keith D. Jamison
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Patent number: 6429596Abstract: A field emission cathode providing for dynamic adjustment of beam shape is disclosed. Beam shape adjustment is accomplished by segmenting the gate electrode of a gated field emission cathode and independently driving the various gate segments to form the desired beam shape. Segments can be turned on and off as the beam is deflected allowing dynamic correction of aberrations in the beam. A focus lens can be placed on the gated cathode to produce a parallel electron beam. In addition, a hollow cathode can be produced to minimize space charge repulsion in a beam.Type: GrantFiled: December 31, 1999Date of Patent: August 6, 2002Assignee: Extreme Devices, Inc.Inventors: Keith D. Jamison, Donald E. Patterson
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Patent number: 6373182Abstract: Apparatus and method for mounting a field emission device having emitters and an extraction grid in an electron gun are provided. The apparatus may be adapted from parts of a conventional electron gun that uses a thermionic emitter. Electrical connection to the grid is provided by bumps that are spring-loaded against a conducting surface, such as the second grid of a conventional electron gun.Type: GrantFiled: March 24, 2000Date of Patent: April 16, 2002Assignee: Extreme Devices, Inc.Inventors: Anthony A. Kloba, Randolph D. Schueller, David A. Delguzzi, Donald E. Patterson, Keith D. Jamison, Kent R. Kalar
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Patent number: 6359378Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 percent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes.Type: GrantFiled: January 29, 2001Date of Patent: March 19, 2002Assignee: Extreme Devices, Inc.Inventors: Donald E. Patterson, Keith D. Jamison
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Publication number: 20020011774Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes.Type: ApplicationFiled: January 29, 2001Publication date: January 31, 2002Inventors: Donald E. Patterson, Keith D. Jamison
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Patent number: 6329745Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes.Type: GrantFiled: January 29, 2001Date of Patent: December 11, 2001Assignee: Extreme Devices, Inc.Inventors: Donald E. Patterson, Keith D. Jamison
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Publication number: 20010005111Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes.Type: ApplicationFiled: January 29, 2001Publication date: June 28, 2001Inventors: Donald E. Patterson, Keith D. Jamison
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Patent number: 6181055Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device.Type: GrantFiled: October 12, 1998Date of Patent: January 30, 2001Assignee: Extreme Devices, Inc.Inventors: Donald E. Patterson, Keith D. Jamison
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Patent number: 5697824Abstract: A system and method for producing thin, uniform powder phosphors for field emission display screens features a planarization of the phosphor powder layer. That planarization is accomplished by placing the deposited phosphor layer in an anode plate between two optical flats, which are then mounted within a mechanical press.Type: GrantFiled: June 7, 1995Date of Patent: December 16, 1997Assignees: Microelectronics and Computer Technology Corp., SI Diamond Technology, Inc.Inventors: Chenggang Xie, Donald E. Patterson, Nalin Kumar
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Patent number: 5531880Abstract: A system and method for producing thin, uniform powder phosphors for field emission display screens wherein a planarization of the phosphor powder layer is accomplished by placing the deposited phosphor layer in an anode plate between two optical flats, which are then mounted within a mechanical press.Type: GrantFiled: September 13, 1994Date of Patent: July 2, 1996Assignees: Microelectronics and Computer Technology Corporation, SI Diamond Technology, IncorporatedInventors: Chenggang Xie, Donald E. Patterson, Nalin Kumar
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Patent number: 5316795Abstract: The present invention is directed to a method for depositing diamond films and particles on a variety of substrates by flowing a gas or gas mixture capable of supplying (1) carbon, (2) hydrogen, (3) a halogen and, preferably, (4) a chalcogen through a reactor over the substrate material. The reactant gases may be premixed with an inert gas in order to keep the overall gas mixture composition low in volume percent of carbon and rich in hydrogen. Pre-treatment of the reactant gases to a high energy state is not required as it is in most prior art processes for chemical vapor deposition of diamond. Since pretreatment is not required, the process may be applied to substrates of virtually any desired size, shape or configuration.Type: GrantFiled: May 7, 1991Date of Patent: May 31, 1994Assignee: Houston Advanced Research CenterInventors: Donald E. Patterson, Robert H. Hauge, C. Judith Chu, John L. Margrave
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Patent number: 5071677Abstract: The present invention is directed to a method for depositing diamond films and particles on a variety of substrates by flowing a gas or gas mixture capable of supplying (1) carbon, (2) hydrogen and (3) a halogen through a reactor over the substrate material. The reactant gases may be pre-mixed with an inert gas in order to keep the overall gas mixture composition low in volume percent of carbon and rich in hydrogen. Pre-treatment of the reactant gases to a high energy state is not required as it is in most prior art processes for chemical vapor deposition of diamond. Since pre-treatment is not required, the process may be applied to substrates of virtually any desired size, shape or configuration.The reactant gas mixture preferably is passed through a reactor, a first portion of which is heated to a temperature of from about 400.degree. C. to about 920.degree. C. and more preferably from about 800.degree. C. to about 920.degree. C.Type: GrantFiled: May 24, 1990Date of Patent: December 10, 1991Assignee: Houston Advanced Research CenterInventors: Donald E. Patterson, Robert H. Hauge, C. Judith Chu, John L. Margrave
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Patent number: 4357953Abstract: An apparatus for introducing powdered solids into a liquid stream at a controlled rate to form a slurry. Solids are metered to an eductor where they are educted into the liquid stream. An automatic cycle timer-controller purges eductor, hopper and piping of residual solids before solids flow is initiated, and following solids flow. Pressure sensors detect low water pressure and/or plugging, shutting off liquid and solids flow.Type: GrantFiled: February 26, 1981Date of Patent: November 9, 1982Assignee: Sterling Drug Inc.Inventor: Donald E. Patterson
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Patent number: H1461Abstract: A coating is provided for an optical fiber that inhibits abrasion or scraing of the fiber's surface. The coating is obtained by depositing a thin film of non-hydrogenated diamond-like amorphous carbon (a-C) onto the optical fiber using a laser ablation technique employing graphite as a target material.Type: GrantFiled: May 10, 1993Date of Patent: July 4, 1995Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Sam DiVita, John L. Margrave, Leif Fredin, Donald E. Patterson