Abstract: Apparatus and method for sequentially processing multi-level interconnections for microelectronic circuits are disclosed which includes a vacuum system having a vacuum chamber 12 in which wafers 20 are processed on rotating turntables 16 and 18. The vacuum chamber is provided with an RF sputtering system 24 and a DC magnetron sputtering system 28. A gas inlet 34 is provided in the chamber for the introduction of various gases to the vacuum chamber and the creation of various gas plasma during the sputtering steps. The rotating turntables 16, 18 insure that the respective wafers are present under the sputtering guns for an average amount of time such that consistency in sputtering and deposition is achieved. By continuous and sequential processing of the wafers in a common vacuum chamber without removal, the adverse affects of exposure to atmospheric conditions are eliminated providing higher quality circuit contacts and functional device.

Abstract: The method of constructing a high voltage, low power, multi-cell solar array wherein a solar cell base region is formed in a substrate such as but not limited to that of silicon or on a substrate of sapphire, and then by the steps of application of a protective coating on the base, patterned etching of the coating and base to thereby form discrete base regions, forming a semi-conductive junction and upper active region in each base region defined by photolithography, and thus forming discrete cells which are interconnected by metallic electrodes.

Abstract: An improved method of constructing a metal oxide semiconductor (MOS) device having multiple layers of metal deposited by D.C. magnetron sputtering at low D.C. voltages and low substrate temperatures provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.