Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Abstract: Methods for treating a semiconductor material, and for making devices containing a semiconducting material, are presented. One embodiment is a method for treating a semiconductor material that includes a chalcogenide. The method comprises contacting at least a portion of the semiconductor material with a chemical agent. The chemical agent comprises a solvent, and an iodophor dissolved in the solvent.

Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Abstract: Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.

Abstract: A method of making a photovoltaic device is presented. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract: A method of making a photovoltaic device is presented. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract: Methods for treating a semiconductor material, and for making devices containing a semiconducting material, are presented. One embodiment is a method for treating a semiconductor material that includes a chalcogenide. The method comprises contacting at least a portion of the semiconductor material with a chemical agent. The chemical agent comprises a solvent, and an iodophor dissolved in the solvent.

Abstract: A method of making a photovoltaic device is presented. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract: Methods for treating a semiconductor material, and for making devices containing a semiconducting material, are presented. One embodiment is a method for treating a semiconductor material that includes a chalcogenide. The method comprises contacting at least a portion of the semiconductor material with a chemical agent. The chemical agent comprises a solvent, and an iodophor dissolved in the solvent.

Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Abstract: Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.

Abstract: One aspect of the present invention includes a photovoltaic device. The photovoltaic device includes a window layer disposed on a support and a doped absorber layer disposed on the window layer, wherein the doped absorber layer includes an absorber material and a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The photovoltaic devices further includes an interfacial layer disposed on the doped absorber layer, wherein the interfacial comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract: One aspect of the present invention includes a method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract: Large-Area lighting systems and methods of making the same. More specifically, groups of organic light emitting modules, such as organic light emitting diode modules, coupled in series with respect to on another are provided. The modules cathode of each organic light emitting module is electrically coupled to the anode of an adjacent light emitting module in an interconnect region. A portion of the cathode of each module extends adjacent to an active area of an adjacent module at an interconnect region. Methods of fabricating series groups of organic light emitting modules employing continuous material layers is also provided.

Abstract: Apparatus and methods for forming optoelectronic devices such as an array of light emitting diodes or photovoltaic cells employ in one embodiment a roll-to-roll process in which a uniquely configured roller having a plurality of spaced-apart raised coating surfaces is aligned with a plurality of columns of first electrodes on a substrate for coating a plurality of spaced-apart strips of optoelectronic materials along the longitudinal direction of the substrate and on a plurality of spaced-apart columns of the first electrodes.

Abstract: An organic device package includes a flexible substrate having a topside and a bottom side. Further, the organic device package includes an organic electronic device having a first side and a second side disposed on the topside of the flexible substrate. In addition, the organic device package includes a first barrier layer disposed on the bottom side of the flexible substrate.

Abstract: Hermetically sealed packages include a getter precursor disposed within an interior region of the package. The getter precursor includes a cation portion and a non-oxidizing anion portion, which is configured to thermally decompose to change an oxidation state of cation to zero. Also disclosed herein are processes for hermetically sealing a package by coating a solution of the getter precursor onto interior defining wall surface of the package.

Abstract: Hermetically sealed packages having organic electronic devices are presented. A number of sealing mechanisms are provided to hermetically seal the package to protect the organic electronic device from environmental elements. A metal alloy sealant layer is employed proximate to the organic electronic device. Alternatively, a metal alloy sealant layer in combination with primer layer may also be implemented. Further, superstrates and edge wraps may be provided to completely surround the organic electronic device.

Abstract: Large-Area lighting systems and methods of making the same. More specifically, groups of organic light emitting modules, such as organic light emitting diode modules, coupled in series with respect to on another are provided. The modules cathode of each organic light emitting module is electrically coupled to the anode of an adjacent light emitting module in an interconnect region. A portion of the cathode of each module extends adjacent to an active area of an adjacent module at an interconnect region. Methods of fabricating series groups of organic light emitting modules employing continuous material layers is also provided.

Abstract: The present invention relates to an area illumination light source comprising a plurality of individual OLED panels. The individual OLED panels are configured in a physically modular fashion. Each OLED panel comprising a plurality of OLED devices. Each OLED panel comprises a first electrode and a second electrode such that the power being supplied to each individual OLED panel may be varied independently. A power supply unit capable of delivering varying levels of voltage simultaneously to the first and second electrodes of each of the individual OLED panels is also provided. The area illumination light source also comprises a mount within which the OLED panels are arrayed.