Abstract: Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a processing layer having a working surface adapted to process a substrate, a lower layer coupled to and disposed below the processing layer, and an electrode having an upper surface disposed above the lower layer and below the working surface of the processing layer. The upper surface of the electrode is at least partially exposed to the working surface to provide an electrolyte pathway between the upper surface of the electrode and the working surface.

Abstract: A method of planarizing a metal conductive layer on a substrate is provided. In one embodiment, a substrate having a metal conductive layer disposed on a top surface of the substrate is provided on a substrate support. The substrate support is rotated and the top surface of the substrate is contacted with a liquid etching composition. The metal conductive layer is then exposed to an etchant gas in order to planarize the top surface of the metal conductive layer. Also provided is an apparatus for etching a metal conductive layer on a substrate. The apparatus comprises a container, a substrate support disposed in the container, a rotation actuator attached to the substrate support, and a fluid delivery assembly disposed in the container.

Abstract: A load cup for transferring a substrate in a chemical mechanical polishing system is provided. In one embodiment, a load cup for transferring substrates in a chemical mechanical polishing system includes a substrate support having a first side adapted to support a substrate thereon and at least one actuator coupled to the substrate support and adapted to move the substrate support laterally. In another embodiment, a method for transferring a substrate between a polishing head and a load cup includes sensing a position of the polishing head relative to the load cup and automatically aligning the load cup and polishing head in response to the sensed relative position.

Abstract: In a first aspect, a rotary vacuum-chuck is provided that may hold a substrate such as a silicon wafer for rotation. The vacuum-chuck includes a hollow rotary shaft and a chuck mounted on the hollow rotary shaft and having a surface adapted to support a substrate. The chuck has one or more openings in fluid communication with the hollow rotary shaft. A venturi is formed near an end of the hollow rotary shaft to apply vacuum to the hollow rotary shaft and the openings in the chuck surface. No seal is required between the end of the hollow rotary shaft and a surrounding stationary block.

Abstract: A non-contact apparatus and method for removing a metal layer from a substrate are provided. The apparatus includes a rotatable anode substrate support member configured to support a substrate in a face-up position and to electrically contact the substrate positioned thereon. A pivotally mounted cathode fluid dispensing nozzle assembly positioned above the anode substrate support member is also provided. A power supply in electrical communication with the anode substrate support member and the cathode fluid dispensing nozzle is provided, and a system controller configured to regulate at least one of a rate of rotation of the anode substrate support member, a radial position of the cathode fluid dispensing nozzle, and an output power of the power supply is provided. The method provides for the removal of a metal layer from a substrate by rotating the substrate in a face up position on a rotatable substrate support member.

Abstract: An apparatus comprising an electrolyte cell, an anode, and a porous rigid diffuser. The electrolyte cell is configured to receive a substrate to have a metal film deposited thereon. An anode is contained within the electrolyte cell. A porous rigid diffuser is connected to the electrolyte cell and extends across the electrolyte cell. The diffuser is positioned between a location that the substrate is to be positioned when the metal film is deposited thereon and the anode.

Abstract: An apparatus for and method of rinsing one side of a two-sided substrate and removing unwanted material from the substrate's edge and/or backside. One embodiment of the method is directed toward rinsing and cleaning a substrate having a front side upon which integrated circuits are to be formed and a backside. This embodiment includes dropping the substrate front side down onto a pool of rinsing liquid in a manner such that the front side of the substrate is in contact with the solution while the substrate is held in suspension by the surface tension of the solution liquid thereby preventing the backside of the substrate from sinking under an upper surface of the pool. Next, while the substrate is in suspension in said rinsing liquid, the substrate is secured by its edge with a first set of fingers and in some embodiments the substrate is subsequently spun. In another embodiment, a method of forming a copper layer on a front side of a substrate is disclosed.

Abstract: A guide apparatus comprising a plurality of guide linkages. Each one of the plurality of guide linkages comprises a pair of linkage members, each pair of the linkage members are rotatably connected about a guide pivot axis. The guide pivot axis of each guide linkage is arranged in a direction opposed to the direction of the guide pivot axis of the remainder of the guide linkages. In one aspect, each guide linkage is arranged between a robot platform or a cassette and a base such that extending each of the plurality of guide linkages acts to linearly displace the robot platform relative to the base while limiting tilting of the robot platform or the cassette. In another aspect a robot can extend its end effectors while limiting tilting of the end effectors.

Abstract: The present invention relates to a method and apparatus for depositing metal on a substrate. More particularly, one embodiment of the metal deposition cell comprising a cell base, an anode, and a cell top. The cell base at least partially defines an interior recess. The anode mounted within the interior recess to the cell base. The cell top is removably mounted to the cell base. In one embodiment, a method of removing a modular metal deposition cell from a deposition cell mount is provided. The modular metal deposition cell comprises a cell top and a cell bottom. The method comprises unfastening a fastener that secures the cell top to the cell bottom, and also fastens the cell top and the cell bottom to the deposition cell mount. The cell top or the cell bottom is then removed from the deposition cell mount.

Abstract: In a first aspect, a rotary vacuum-chuck is provided that may hold a substrate such as a silicon wafer for rotation. The vacuum-chuck includes a hollow rotary shaft and a chuck mounted on the hollow rotary shaft and having a surface adapted to support a substrate. The chuck has one or more openings in fluid communication with the hollow rotary shaft. A venturi is formed near an end of the hollow rotary shaft to apply vacuum to the hollow rotary shaft and the openings in the chuck surface. No seal is required between the end of the hollow rotary shaft and a surrounding stationary block.

Abstract: An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer.

Abstract: A method of planarizing a metal conductive layer on a substrate is provided. In one embodiment, a substrate having a metal conductive layer disposed on a top surface of the substrate is provided on a substrate support. The substrate support is rotated and the top surface of the substrate is contacted with a liquid etching composition. The metal conductive layer is then exposed to an etchant gas in order to planarize the top surface of the metal conductive layer. Also provided is an apparatus for etching a metal conductive layer on a substrate. The apparatus comprises a container, a substrate support disposed in the container, a rotation actuator attached to the substrate support, and a fluid delivery assembly disposed in the container.

Abstract: An apparatus comprising an electrolyte cell, an anode, and a porous rigid diffuser. The electrolyte cell is configured to receive a substrate to have a metal film deposited thereon. An anode is contained within the electrolyte cell. A porous rigid diffuser is connected to the electrolyte cell and extends across the electrolyte cell. The diffuser is positioned between a location that the substrate is to be positioned when the metal film is deposited thereon and the anode.

Abstract: The present invention relates to a method and apparatus for depositing metal on a substrate. More particularly, one embodiment of the metal deposition cell comprising a cell base, an anode, and a cell top. The cell base at least partially defines an interior recess. The anode mounted within the interior recess to the cell base. The cell top is removably mounted to the cell base. In one embodiment, a method of removing a modular metal deposition cell from a deposition cell mount is provided. The modular metal deposition cell comprises a cell top and a cell bottom. The method comprises: unfastening a fastener that secures the cell top to the cell bottom, and also fastens the cell top and the cell bottom to the deposition cell mount. The cell top or the cell bottom are then removed from the deposition cell mount.

Abstract: A non-contact apparatus and method for removing a metal layer from a substrate are provided. The apparatus includes a rotatable anode substrate support member configured to support a substrate in a face-up position and to electrically contact the substrate positioned thereon. A pivotally mounted cathode fluid dispensing nozzle assembly positioned above the anode substrate support member is also provided. A power supply in electrical communication with the anode substrate support member and the cathode fluid dispensing nozzle is provided, and a system controller configured to regulate at least one of a rate of rotation of the anode substrate support member, a radial position of the cathode fluid dispensing nozzle, and an output power of the power supply is provided. The method provides for the removal of a metal layer from a substrate by rotating the substrate in a face up position on a rotatable substrate support member.

Abstract: An apparatus for and method of rinsing one side of a two-sided substrate and removing unwanted material from the substrate's edge and/or backside. One embodiment of the method is directed toward rinsing and cleaning a substrate having a front side upon which integrated circuits are to be formed and a backside. This embodiment includes dropping the substrate front side down onto a pool of rinsing liquid in a manner such that the front side of the substrate is in contact with the solution while the substrate is held in suspension by the surface tension of the solution liquid thereby preventing the backside of the substrate from sinking under an upper surface of the pool. Next, while the substrate is in suspension in said rinsing liquid, the substrate is secured by its edge with a first set of fingers and in some embodiments the substrate is subsequently spun. In another embodiment, a method of forming a copper layer on a front side of a substrate is disclosed.

Abstract: An apparatus and associated method that removes electrolyte solution from a substrate, the apparatus comprises a thrust plate and a substrate extension unit. The thrust plate at least partially defines a spin recess. The substrate extension unit can be displaced between a retracted position and an extended position relative to the spin recess. The substrate extension unit is disposed within the spin recess when positioned in the retracted position. The substrate extension unit at least partially extends from within the spin recess when positioned in the extended position. The substrate is processed by immersing at least a portion of the substrate in a wet solution. The substrate is removed from the wet solution. The substrate extension unit extends into its extended position, and the substrate is spun. Extending the substrate extension unit limits the formation of fluid traps within the substrate holder assembly or between the substrate and the substrate holder assembly.

Abstract: Apparatus for multi-chambered semiconductor wafer processing comprising a polygonal structure having at least two semiconductor process chambers disposed on one side. An area between the process chambers provides a maintenance access to the semiconductor processing equipment. Additionally, the apparatus may be clustered or daisy-chained together to enable a wafer to access additional processing chambers without leaving the controlled environment of the semiconductor wafer processing equipment.

Abstract: An apparatus and associated method that removes electrolyte solution from a substrate, the apparatus comprises a thrust plate and a substrate extension unit. The thrust plate at least partially defines a spin recess. The substrate extension unit can be displaced between a retracted position and an extended position relative to the spin recess. The substrate extension unit is disposed within the spin recess when positioned in the retracted position. The substrate extension unit at least partially extends from within the spin recess when positioned in the extended position. The substrate is processed by immersing at least a portion of the substrate in a wet solution. The substrate is removed from the wet solution. The substrate extension unit extends into its extended position, and the substrate is spun. Extending the substrate extension unit limits the formation of fluid traps within the substrate holder assembly or between the substrate and the substrate holder assembly.

Abstract: An apparatus comprising an electrolyte cell, an anode, and a porous rigid diffuser. The electrolyte cell is configured to receive a substrate to have a metal film deposited thereon. An anode is contained within the electrolyte cell. A porous rigid diffuser is connected to the electrolyte cell and extends across the electrolyte cell. The diffuser is positioned between a location that the substrate is to be positioned when the metal film is deposited thereon and the anode.