Abstract: A method of mask correction where two independent process models are analyzed and co-optimized simultaneously. In the method, a first lithographic process model simulation is run on a computer system that results in generating a first mask size in a first process window. Simultaneously, a second hard mask open etch process model simulation is run resulting in generating a second mask size in a second process window. Each first lithographic process model and second hard mask open etch process model simulations are analyzed in a single iterative loop and a common process window (PW) optimized between lithography and etch is obtained such that said first mask size and second mask size are centered between said common PW. Further, an etch model form is generated that accounts for differences in an etched pattern due to variation in three-dimensional photoresist profile, the model form including both optical and density terms that directly relate to an optical image.

Abstract: A method of mask correction where two independent process models are analyzed and co-optimized simultaneously. In the method, a first lithographic process model simulation is run on a computer system that results in generating a first mask size in a first process window. Simultaneously, a second hard mask open etch process model simulation is run resulting in generating a second mask size in a second process window. Each first lithographic process model and second hard mask open etch process model simulations are analyzed in a single iterative loop and a common process window (PW) optimized between lithography and etch is obtained such that said first mask size and second mask size are centered between said common PW. Further, an etch model form is generated that accounts for differences in an etched pattern due to variation in three-dimensional photoresist profile, the model form including both optical and density terms that directly relate to an optical image.

Abstract: Techniques, systems, and methods are provided for optimizing pattern density fill patterns for integrated circuits. The method includes adjusting an area of a scribe line and a density of dummy fill shapes in the adjusted scribe line, while maintaining an area of the die, to achieve a pattern density associated with technology ground rules for a particular design of the die.

Abstract: Techniques, systems, and methods are provided for optimizing pattern density fill patterns for integrated circuits. The method includes adjusting an area of a scribe line and a density of dummy fill shapes in the adjusted scribe line, while maintaining an area of the die, to achieve a pattern density associated with technology ground rules for a particular design of the die.

Abstract: Methods of forming line ends and a related memory cell including the line ends are disclosed. In one embodiment, the method includes forming a first device element and a second device element separated from the first device element by a space; and forming a first line extending from the first device element, the first line including a bulbous line end over the space and distanced from the first device element, and a second line extending from the second device element, the second line including a bulbous line end over the space and distanced from the second device element.

Abstract: Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.

Abstract: A method, system and program product for comparing a junk fax image stored in a database to an incoming facsimile image to determine whether the incoming facsimile image is a junk fax. If the facsimile image is a junk fax, the image is either deleted or the communication terminated. The invention also provides a junk fax determinator by which an incoming facsimile image can be designated as a junk fax. In one embodiment, a recipient (user) can make the determination as to whether the incoming facsimile image is a junk fax and generate a personal junk fax database. In another embodiment, the recipient (user) can scan a hard copy document to form an incoming facsimile image, which can be saved as a junk fax in a personal junk fax database.

Abstract: Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.

Abstract: Methods of forming line ends and a related memory cell including the line ends are disclosed. In one embodiment, the memory cell includes fa first device having a first conductive line extending over a first active region and having a first line end of the first conductive line positioned over an isolation region adjacent to the first active region; and a second device having a second conductive line extending over one of a second active region and a contact element and having a second line end of the second conductive line positioned over the isolation region adjacent to the one of the second active region and the contact element, wherein the first line end and the second line end each include a bulbous end that is distanced from a respective active region or contact element.

Abstract: Methods of forming line ends and a related memory cell including the line ends are disclosed. In one embodiment, the method includes forming a first device element and a second device element separated from the first device element by a space; and forming a first line extending from the first device element, the first line including a bulbous line end over the space and distanced from the first device element, and a second line extending from the second device element, the second line including a bulbous line end over the space and distanced from the second device element.

Abstract: A method for designing alternating phase shift masks is provided, in which narrow phase shapes located between densely spaced design shapes are colored to allow a maximum amount of light transmission. After assigning and ensuring binary legalization of the phase shapes, the narrow phase shapes are assigned a color, such as 0° phase shift, that allows the more light transmission than the alternate or opposite color (e.g. 180° phase shift), which helps avoid printing errors such as resist scumming between closely spaced shapes, and maximizes the lithographic process window.

Abstract: Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.

Abstract: A method of designing lithographic masks is provided where mask segments used in a model-based optical proximity correction (MBOPC) scheme are adaptively refined based on local image information, such as image intensity, gradient and curvature. The values of intensity, gradient and curvature are evaluated locally at predetermined evaluation points associated with each segment. An estimate of the image intensity between the local evaluation points is preferably obtained by curve fitting based only on values at the evaluation points. The decision to refine a segment is based on the deviation of the simulated image threshold contour from the target image threshold contour. The output mask layout will provide an image having improved fit to the target image, without a significant increase in computation cost.

Abstract: A first aspect of the present invention is a method of determining an optical proximity correction for a primary feature having sub-resolution assist features for increasing the depth of focus of the primary features, comprising: generating a line/space pair; placing sub-resolution assist features on opposite sides of the line of the line/space pair; generating a set of linewidth biases; applying the set of linewidth biases to the line of the line/space pair to generate a set of biased-line/space pairs; determining for each biased-line/space pair, a deviation from a design linewidth of the line/space pair when the set of biased-line/space pairs are printed or simulated; and determining from the deviation a correction bias to apply to the line of the line/space pair. The invention also encompasses apparatus and computer programs for carrying out the methods.

Abstract: A first aspect of the present invention is a method of determining an optical proximity correction for a primary feature having sub-resolution assist features for increasing the depth of focus of the primary features, comprising: generating a line/space pair; placing sub-resolution assist features on opposite sides of the line of the line/space pair; generating a set of linewidth biases; applying the set of linewidth biases to the line of the line/space pair to generate a set of biased-line/space pairs; determining for each biased-line/space pair, a deviation from a design linewidth of the line/space pair when the set of biased-line/space pairs are printed or simulated; and determining from the deviation a correction bias to apply to the line of the line/space pair. The invention also encompasses apparatus and computer programs for carrying out the methods.

Abstract: A computer operated process (30) for inspecting patterns (32, 34) on an object (31) includes establishing different mismatch margins for different patterns (32, 34). A strict margin is associated with the pattern (32) in a critical area (12), and a relaxed margin is associated with the pattern (34) in a non-critical area (14). The inspection process (30) rejects the object (31) as being defective if a mismatch between a pattern (32, 34) and its respective master pattern (42, 44) exceeds a corresponding mismatch margin. Therefore, the inspection process (30) maintains a high standard for the pattern (32) in the critical area (12) and eases the standard for the pattern (34) in the non-critical area (14).

Abstract: There is provided a method for Optical Proximity Correction (OPC) of a semiconductor device. The method includes the step of pre-sorting the shapes and/or the shape edges into groups based on pre-defined criteria. Different regions of interest are applied to at least some of the shapes and the shape edges, based on which of the groups the at least some of the shapes and the shape edges are pre-sorted into. The pre-defined criteria may include: properties or labels associated with the shapes and/or the shape edges during a design process of the semiconductor device; geometric properties of the shapes and/or the shape edges; structural properties of an overall design of the semiconductor device; and the shapes and/or the shape edges for which a larger region of interest is required.

Abstract: Image shortening in a photolithographic process is substantially reduced by using sub-resolution reticle features to alter the aerial image in the shortened regions. The use of such sub-resolution reticle features is simple to implement in a design system, and allows for increased feature aspect ratio as well as overlap to other critical features.

Abstract: A method, and a system for employing the method, for providing a modified optical proximity correction (OPC) for correcting distortions of pattern lines on a semiconductor circuit wafer. The method comprises producing a mask having one or more pattern regions, and producing the semiconductor circuit wafer from the mask. The pattern regions include one or more non-edge pattern regions located adjacent to other of the non-edge pattern regions on the mask. The pattern regions further include one or more edge pattern regions located at or near an area on the mask not having the other non-edge pattern regions. The edge pattern regions have widths calculated to minimize the variance in dimensions between one or more pattern lines on the semiconductor circuit wafer formed from them and one or more pattern lines on the semiconductor circuit wafer formed from the non-edge pattern regions.

Abstract: The present invention provides a method and an optical lithographic system which eliminates the standing wave effect typically observed in photoresists without the need for altering the thickness of the photoresist, utilizing an anti-reflective coating material, or changing the light source. Specifically, the present invention compensates for standing waves by exposing the photoresist with light from a light source at different phases. That is, in the present invention there is a change in light exposure from a single dose at one phase to a plurality of doses at different phases; therefore dispersing the effects of the standing wave at each of those phases which in turn eliminates the standing wave.