Abstract: A unipolar diode with low turn-on voltage includes a subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and a high-doped, narrow bandgap anode semiconductor layer. A junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode. A unipolar diode with low turn-on voltage includes an n+ subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and an n+ narrow bandgap anode semiconductor layer. Again, a junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode.

Abstract: A unipolar diode with low turn-on voltage includes a subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and a high-doped, narrow bandgap anode semiconductor layer. A junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode. A unipolar diode with low turn-on voltage includes an n+ subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and an n+ narrow bandgap anode semiconductor layer. Again, a junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode.

Abstract: Formation of a regrowth layer of a Group III–V semiconductor material is facilitated by prior formation of an intermediate layer, selected primarily for its smooth morphology properties. The intermediate layer is formed over an underlying substrate and over a dielectric layer formed over portions of the substrate. The intermediate layer maintains the monocrystalline properties of the underlying substrate in regions other than those covered by the dielectric layer, and improves the electrical and morphology properties of the regrowth layer formed over the intermediate layer.

Abstract: A double heterojunction bipolar transistor structure having desirable properties of a low base-emitter turn-on voltage and no electron blocking discontinuities in the base-collector junction. These properties are achieved by selecting base, emitter and collector materials to provide a bandgap profile that exhibits abrupt transitions at the heterojunctions, such that both abrupt transitions are due to transitions in the valence band edge of the bandgap, but not in the conductive band edge of the bandgap.

Abstract: A preferred embodiment of the present invention provides a Schottky diode formed from a conductive anode contact, a semiconductor junction layer supporting the conductive contact and a base layer ring formed around at least a portion of the conductive anode contact. In particular, the base layer ring has material removed to form layer material gap (e.g., a vacuum gap) adjacent to the conductive anode contact. A dielectric layer is also provided to form one boundary of the base layer material gap.

Abstract: A preferred embodiment of the present invention provides a Schottky diode formed from a conductive anode contact, a semiconductor junction layer supporting the conductive contact and a base layer ring formed around at least a portion of the conductive anode contact. In particular, the base layer ring has material removed to form a base layer material gap (e.g., a vacuum gap) adjacent to the conductive anode contact. A dielectric layer is also provided to form one boundary of the base layer material gap.

Abstract: A preferred embodiment of the present invention provides a Schottky diode (100) formed from a conductive anode contact (102), a semiconductor junction layer (104) supporting the conductive contact (102) and a base layer ring (108) formed around at least a portion of the conductive anode contact (102). In particular, the base layer ring (108) has material removed to form a base layer material gap (118) (e.g., a vacuum gap) adjacent to the conductive anode contact (102). A dielectric layer (110) is also provided to form one boundary of the base layer material gap (118).