Abstract: A lens and encapsulant made of an amorphous fluoropolymer for a light-emitting diode (LED) or diode laser, such as an ultraviolet (UV) LED (UVLED). A semiconductor diode die (114) is formed by growing a diode (110) on a substrate layer (115) such as sapphire. The diode die (114) is flipped so that it emits light (160, 365) through the face (150) of the layer (115). An amorphous fluoropolymer encapsulant encapsulates the emitting face of the diode die (114), and may be shaped as a lens to form an integral encapsulant/lens. Or, a lens (230, 340) of amorphous fluoropolymer may be joined to the encapsulant (220). Additional joined or separate lenses (350) may also be used. The encapsulant/lens is transmissive to UV light as well as infrared light. Encapsulating methods are also provided.

Abstract: Block copolyestercarbonates may be prepared by first conducting a reaction between at least one of resorcinol or an alkyl- or haloresorcinol and at least one aromatic dicarboxylic acid dichloride, preferably isophthaloyl dichloride, terephthaloyl dichloride or a mixture thereof, to produce a hydroxy-terminated polyester intermediate, and then conducting a reaction of the intermediate with a carbonate precursor, preferably in the presence of a dihydroxy compound such as bisphenol A. The products have excellent physical properties, including a high degree of weatherability. They may be blended with other polymers such as polycarbonates, poly(alkylene carboxylates), polyarylates, polyetherimides, and addition polymers to improve the weatherability thereof.

Abstract: A method for generating an image of an object of interest includes acquiring a first three-dimensional dataset of the object at a first position using an X-ray source and a detector, acquiring a second three-dimensional dataset of the object at the first position using an ultrasound probe, and combining the first three-dimensional dataset and the second three-dimensional dataset to generate a three-dimensional image of the object.

Abstract: Block copolyestercarbonates may be prepared by first conducting a reaction between at least one of resorcinol or an alkyl- or haloresorcinol and at least one aromatic dicarboxylic acid dichloride, preferably isophthaloyl dichloride, terephthaloyl dichloride or a mixture thereof, to produce a hydroxy-terminated polyester intermediate, and then conducting a reaction of the intermediate with a carbonate precursor, preferably in the presence of a dihydroxy compound such as bisphenol A. The products have excellent physical properties, including a high degree of weatherability. They may be blended with other polymers such as polycarbonates, poly(alkylene carboxylates), polyarylates, polyetherimides, and addition polymers to improve the weatherability thereof.

Abstract: The multistage process for the chemical-mechanical planarization (CMP) of Cu commences with forming a primary aqueous or non-aqueous (e.g., using alcohols and ketones as non-aqueous carriers) slurry from (i) between about 0 and 7 wt-% of an oxidizer, (ii) between 0 and 7 wt-% of a chelating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;, and (v) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 3 and 10, and advantageously about 5). The Cu of the semiconductor wafer then is subjected to CMP using the primary aqueous slurry and then is subjected to a cleaning operation. Next, a secondary aqueous slurry from (i) between about 0 and 5 wt-% of an a hydroxyl amine compound, (ii) between about 0 and 7 wt-% of a chelating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.

Abstract: The multistage process for the chemical-mechanical planarization (CMP) of Cu commences with forming a primary aqueous or non-aqueous (e.g., using alcohols and ketones as non-aqueous carriers) slurry from (i) between about 0 and 7 wt-% of an oxidizer, (ii) between 0 and 7 wt-% of one or more of a complexing agent or a passivating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;m, and (v) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 3 and 10, and advantageously about 5). The Cu of the semiconductor wafer then is subjected to CMP using the primary aqueous slurry and then is subjected to a cleaning operation. Next, a secondary aqueous slurry from (i) between about 0 and 7 wt-% of one or more a complexing agent or a passivating agent, (ii) between about 0 and 5 wt-% of a surfactant, (iii) between about 0.