Abstract: Methods and systems for adaptive configuration of ophthalmic devices are disclosed. An example method may comprise receiving, by a first sensor system disposed on or in a first ophthalmic device, sensor data representing movement of an eye of a user, wherein the first ophthalmic device is disposed within or upon an eye of the user; causing, based on the sensor data, storage of a history of movement of the eye; determining, based on the history of movement, a dwell characteristic indicating a distance at which the eye is fixated when an event occurs; and causing output of a signal indicative of performing an action in response to determining the dwell characteristic.

Abstract: A method for controlling functions in a plurality of multiple wearable ophthalmic lenses each having elements including at least one sensor, a system controller, communication elements, a calibration controller and a power source, the method includes; initiating a calibration by the system controller, causing the at least one sensor to provide control signals to the system controller, causing the at least one sensor to further provide calibration signals to the calibration controller, and the calibration controller conducting a calibration sequence based on the calibration signals from the at least one sensor as a result of user actions which are sensed by the at least one sensor and providing calibration control signals to the system controller.

Abstract: Methods and systems for adaptive configuration of ophthalmic devices are disclosed. An example method may comprise receiving, by a first sensor system disposed on or in a first ophthalmic device, sensor data representing movement of an eye of a user, wherein the first ophthalmic device is disposed within or upon an eye of the user; causing, based on the sensor data, storage of a history of movement of the eye; determining, based on the history of movement, a dwell characteristic indicating a distance at which the eye is fixated when an event occurs; and causing output of a signal indicative of performing an action in response to determining the dwell characteristic.

Abstract: Methods and systems for communication with a user of an ophthalmic device are disclosed. An example method may comprise determining, by a processor disposed on or in an ophthalmic device, an occurrence of an event, wherein the ophthalmic device is disposed within or upon an eye of a user and comprises an ophthalmic lens and a variable-optic element, and wherein the variable-optic element is configured to change a refractive power of the ophthalmic lens; causing the ophthalmic lens to adjust from a first refractive power to a second refractive power indicative of the occurrence of the event; determining that a time threshold is satisfied; and causing, in response to determining that the time threshold is satisfied, the ophthalmic lens to adjust the ophthalmic lens from the second refractive power to the first refractive power.

Abstract: Methods and systems for gesture recognition in an ophthalmic device are described. An example method may comprise receiving, by a first sensor system disposed on or in a first ophthalmic device, first sensor data representing a first movement of a user; determining, based on at least the first sensor data, that the first movement is indicative of a gesture mode trigger; causing, based on the gesture mode trigger, the first sensor system to enter a gesture mode; receiving, during the gesture mode, second sensor data; determining, based on the second sensor data, a second movement, wherein the second movement represents a change relative to one or more of a first axis and a second axis; determining a gesture of the user by comparing the second movement to one or more stored movements associated with corresponding gestures; and processing the gesture of the user.

Abstract: The present disclosure relates to a communication systems for electronic ophthalmic devices. In certain embodiments, the ophthalmic device may comprise a light-emitting device. The ophthalmic device may comprise a light detection device. The light detection device may be used to receive light signals. The light-emitting device may be used to transmit light signals.

Abstract: A method including transmitting, by a first processor disposed in or on a first ophthalmic device, first data to a second processor disposed in or on a second ophthalmic device; transmitting, by the second processor, second data to the first processor; determining, by the first processor and during a time period, a first characteristic of a user based on at least the second data; and determining, by the second processor and during the time period, a second characteristic of the user based on at least the first data.

Abstract: A method including receiving sensor data during a calibration sequence for one or more a first ophthalmic device or a second ophthalmic device; determining, based on the sensor data, a change in a characteristic of one or more of the first eye or the second eye, the change relates to a calibration instruction provided to the user during the calibration sequence; determining a first polarity indicating that the first ophthalmic device is disposed adjacent one of a right eye or a left eye based on the change in the characteristic of one or more of the first eye or the second eye; determining a second polarity indicating that the second ophthalmic device is disposed adjacent the other of the right eye or left eye; and associating a first identifier with the first ophthalmic device and a second identifier with the second ophthalmic device.

Abstract: A vergence detection system is incorporated into an ophthalmic lens to automatically determine if the lens wearer is trying to accommodate by viewing a near object or gazing into the distance to view a far object by measuring the vergence angles as the wearer is trying to see near or far. The vergence detection system utilizes multiple sensors to measure certain parameters and make a calculation to determine vergence.

Abstract: A wake circuit is designed to minimize leakage current from a battery or other suitable energy source connected to various electronic components. The wake circuit essentially connects/disconnects or couples/decouples the battery or other power source from the other components when the device is in a storage state or otherwise idle.

Abstract: A wake circuit is designed to minimize leakage current from a battery or other suitable energy source connected to various electronic components. The wake circuit essentially connects/disconnects or couples/decouples the battery or other power source from the other components when the device is in a storage state or otherwise idle.

Abstract: Symmetrical/asymmetrical bidirectional S-shaped I-V characteristics with trigger voltages ranging from 10 V to over 40 V and relatively high holding current are obtained for advanced sub-micron silicided CMOS (Complementary Metal Oxide Semiconductor)/BiCMOS (Bipolar CMOS) technologies by custom implementation of P1-N2-P2-N1//N1-P3-N3-P1 lateral structures with embedded ballast resistance 58, 58A, 56, 56A and periphery guard-ring isolation 88-86. The bidirectional protection devices render a high level of electrostatic discharge (ESD) immunity for advanced CMOS/BiCMOS processes with no latchup problems. Novel design-adapted multifinger 354/interdigitated 336 layout schemes of the ESD protection cells allow for scaling-up the ESD performance of the protection structure and custom integration, while the I-V characteristics 480 are adjustable to the operating conditions of the integrated circuit (IC).

Abstract: Symmetrical/asymmetrical bidirectional S-shaped I-V characteristics with trigger voltages ranging from 10 V to over 40 V and relatively high holding current are obtained for advanced sub-micron silicided CMOS (Complementary Metal Oxide Semiconductor)/BiCMOS (Bipolar CMOS) technologies by custom implementation of P1-N2-P2-N1//N1-P3-N3-P1 lateral structures with embedded ballast resistance 58, 58A, 56, 56A and periphery guard-ring isolation 88-86. The bidirectional protection devices render a high level of electrostatic discharge (ESD) immunity for advanced CMOS/BiCMOS processes with no latchup problems. Novel design-adapted multifinger 354/interdigitated 336 layout schemes of the ESD protection cells allow for scaling-up the ESD performance of the protection structure and custom integration, while the I-V characteristics 480 are adjustable to the operating conditions of the integrated circuit (IC).

Abstract: Symmetrical/asymmetrical bidirectional S-shaped I-V characteristics with trigger voltages ranging from 10 V to over 40 V and relatively high holding current are obtained for advanced sub-micron silicided CMOS (Complementary Metal Oxide Semiconductor)/BiCMOS (Bipolar CMOS) technologies by custom implementation of P1—N2—P2—N1//N1—P3—N3—P1 lateral structures with embedded ballast resistance 58, 58A, 56, 56A and periphery guard-ring isolation 88-86. The bidirectional protection devices render a high level of electrostatic discharge (ESD) immunity for advanced CMOS/BiCMOS processes with no latchup problems. Novel design-adapted multifinger 354/interdigitated 336 layout schemes of the ESD protection cells allow for scaling-up the ESD performance of the protection structure and custom integration, while the I-V characteristics 480 are adjustable to the operating conditions of the integrated circuit (IC).

Abstract: A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD protection. The structureare n-channel high-holding-voltage low-voltage -trigger silicon controller rectifier (N-HHLVTSCR) device and p-channel high-holding-voltage low-voltage -trigger silicon controller rectifier (P-HHLVTSCR) device. The regions of the N-HHLVTSCR and P-HHLVTSCR devices are formed during normal processing steps in a CMOS or BICMOS process. The spacing and dimensions of the doped regions of N-HHLVTSCR and P-HHLVTSCR devices are used to produce the desired characteristics. The tunable HHLVTSCRs makes possible the use of this protection circuit in a broad range of ESD applications including protecting integrated circuits where the I/O signal swing can be either within the range of the bias of the internal circuit or below/above the range of the bias of the internal circuit.

Abstract: Symmetrical/asymmetrical bidirectional S-shaped I-V characteristics with trigger voltages ranging from 10 V to over 40 V and relatively high holding current are obtained for advanced sub-micron silicided CMOS (Complementary Metal Oxide Semiconductor)/BiCMOS (Bipolar CMOS) technologies by custom implementation of P1-N2-P2-N1//N1-P3-N3-P1 lateral structures with embedded ballast resistance 58, 58A, 56, 56A and periphery guard-ring isolation 88-86. The bidirectional protection devices render a high level of electrostatic discharge (ESD) immunity for advanced CMOS/BiCMOS processes with no latchup problems. Novel design-adapted multifinger 354/interdigitated 336 layout schemes of the ESD protection cells allow for scaling-up the ESD performance of the protection structure and custom integration, while the I-V characteristics 480 are adjustable to the operating conditions of the integrated circuit (IC).

Abstract: An electrostatic discharge (ESD) device and method is provided. The ESD device can comprise a substrate doped to a first conductivity type, an epitaxial region doped to the second conductivity type, and a first well doped to the first conductivity type disposed in the substrate. The first well can comprise a first region doped to the first conductivity type, a second region doped to a second conductivity type, and a first isolation region disposed between the first region and the second region. The ESD device can also comprise a second well doped to a second conductivity type disposed in the substrate adjacent to the first well, where the second well can comprise a third region doped to the first conductivity type, a fourth region doped to the second conductivity type, and a second isolation region disposed between the third region and the fourth region.

Abstract: An electrostatic discharge (ESD) device and method is provided. The ESD device can comprise a substrate doped to a first conductivity type, an epitaxial region doped to the second conductivity type, and a first well doped to the first conductivity type disposed in the substrate. The first well can comprise a first region doped to the first conductivity type, a second region doped to a second conductivity type, and a first isolation region disposed between the first region and the second region. The ESD device can also comprise a second well doped to a second conductivity type disposed in the substrate adjacent to the first well, where the second well can comprise a third region doped to the first conductivity type, a fourth region doped to the second conductivity type, and a second isolation region disposed between the third region and the fourth region.

Abstract: A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD protection. The structure are n-channel high-holding-voltage low-voltage-trigger silicon controller rectifier (N-HHLVTSCR) device and p-channel high-holding-voltage low-voltage-trigger silicon controller rectifier (P-HHLVTSCR) device. The regions of the N-HHLVTSCR and P-HHLVTSCR devices are formed during normal processing steps in a CMOS or BICMOS process. The spacing and dimensions of the doped regions of N-HHLVTSCR and P-HHLVTSCR devices are used to produce the desired characteristics. The tunable HHLVTSCRs makes possible the use of this protection circuit in a broad range of ESD applications including protecting integrated circuits where the I/O signal swing can be either within the range of the bias of the internal circuit or below/above the range of the bias of the internal circuit.

Abstract: A rapid acquisition gain control system for use in a wireless communication device having an RF input and a receive signal path including RF and baseband portions. The system includes two or more dual-state gain elements, two or more power detectors and control logic. The gain elements are sequentially coupled in the receive signal path of the wireless device and collectively have multiple combined gain states. Each combined gain state corresponds to one of several gain range segments of a predetermined dynamic range. Each power detector is coupled to detect an output power level associated with one of the gain elements. The control logic changes the combined gain state of the gain elements if a change of power level of energy processed in the receive signal path exceeds a predetermined threshold and a different combined gain state is indicated by the power detectors.