Patents by Inventor Donald L. Barton

Donald L. Barton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for preparing 2-acyl-3, 4-dialkoxyanilines
    Patent number: 4883787
    Abstract: A process for preparing 2-acyl-3,4-dialkoxyanilines is described. The 2-acyl-3,4-dialkoxyanilines are useful intermediates in the preparation of 5,6-dialkoxy-4-alkyl-2(1H)-quinazolinones. The substituted quinazolinones are active as cardiotonic agents.
    Type: Grant
    Filed: June 20, 1988
    Date of Patent: November 28, 1989
    Assignee: Ortho Pharmaceutical Corporation
    Inventors: Richard A. Conley, Donald L. Barton
  • Process for preparing 2-acyl-3,4-dialkoxyanilines
    Patent number: 4731480
    Abstract: A process for preparing 2-acyl-3,4-dialkoxyanilines is described. The 2-acyl-3,4-dialkoxyanilines are useful intermediates in the preparation of 5,6-dialkoxy-4-alkyl-2(1H)-quinazolinones. The substituted quinazolinones are active as cardiotonic agents.
    Type: Grant
    Filed: July 29, 1985
    Date of Patent: March 15, 1988
    Assignee: Ortho Pharmaceutical Corporation
    Inventors: Richard A. Conley, Donald L. Barton
  • Alkyl 2-carboalkoxy-3,4-dialkoxybenzenecarbamates and process for their preparation
    Patent number: 4617417
    Abstract: A process for the preparation of alkyl 2-carboxy-3,4-dialkoxybenzenecarbamates is described. The carbamates are useful intermediates in the preparation of 8-halo-5,6-dialkoxyquinazoline-2,4-diones. The diones are useful as cardiotonic agents.
    Type: Grant
    Filed: July 29, 1985
    Date of Patent: October 14, 1986
    Assignee: Ortho Pharmaceutical Corporation
    Inventors: Richard A. Conley, Donald L. Barton
  • Planarization of dielectric films on integrated circuits
    Patent number: 4545852
    Abstract: A method for planarizing dielectric films between conductive layers on semiconductor wafers is disclosed. Two successive dielectric layers are deposited over a pattern on a wafer and coated with a polymer which has a substantially flat surface. Planarization is obtained when the wafer is plasma etched with the etch rate of the polymer equal to the etch rate of the second dielectric layer. The etch is stopped when all of the polymer has been removed from the wafer. Selectivity in etch rates between the first and second dielectric layers reduces the problems of nonuniformities and the formation of pin holes in the first dielectric layer.
    Type: Grant
    Filed: June 20, 1984
    Date of Patent: October 8, 1985
    Assignee: Hewlett-Packard Company
    Inventor: Donald L. Barton