Abstract: A built-in self-test (BIST) system and method for testing an array of embedded electronic devices, the BIST comprising: a shift register device connected to an output pin of an embedded array of electronic devices being tested and for receiving a failure indication signal at a real-time output pin of the device under test, the shift register generating a unique signature in response to receipt of the failure indication; a device for determining whether the generated unique signature is represented in a table comprising known signature values and corresponding bitmaps of prior determined array defects for that device under test; wherein the need to bitmap the array is avoided when a known failure signature is determined.

Abstract: A built-in self-test (BIST) system and method for testing an array of embedded electronic devices, the BIST comprising: a shift register device connected to an output pin of an embedded array of electronic devices being tested and for receiving a failure indication signal at a real-time output pin of the device under test, the shift register generating a unique signature in response to receipt of the failure indication; a device for determining whether the generated unique signature is represented in a table comprising known signature values and corresponding bitmaps of prior determined array defects for that device under test; wherein the need to bitmap the array is avoided when a known failure signature is determined.

Abstract: A method and apparatus for testing a semiconductor chip includes providing the semiconductor chip with a common input/output (I/O) or bidirectional I/O pad. The I/O pad is electrically coupled to an off-chip driver (OCD) and an off-chip receiver (OCR). The OCD, I/O pad, and OCR are combined in a common input/output (CIO) or bidirectional I/O configuration. The I/O pad is effectively open circuited by an external tester and a performance parameter of the IO circuits connected to the open circuited pad is tested.

Abstract: An integrated chip having a DRAM embedded in logic is tested by an in-situ processor oriented BIST macro. The BIST is provided with two ROMS, one for storing test instructions and a second, which is scannable, that provides sequencing for the test instructions stored in the first ROM, as well as branching and looping capabilities. The BIST macro has, in addition, a redundancy allocation logic section for monitoring failures within the DRAM and for replacing failing word and/or data lines. By stacking the DRAM in 0.5 mb increments up to a 4.0 mb maximum or in 1.0 mb increments up to an 8 mb maximum, all of which are controlled and tested by the BIST macro, a customized chip design with a high level of granularity can be achieved and tailored to specific applications within a larger ASIC.