Abstract: A wafer scale semiconductor integrated circuit packaging technique provides a hermetic seal for the individual integrated circuit die formed as part of the wafer scale structure. A semiconductor wafer is manufactured to include a number of individual semiconductor die. Each individual die formed on the wafer includes a number of bond pads that are exposed on the die surface in various locations to provide electrical connections to the circuitry created on the die. The wafer further includes a planar glass sheet that is substantially the same size as the wafer, the glass sheet being adhered to the wafer using a suitable adhesive. The glass sheet has a number of pre-formed holes in it, the arrangement of the pre-formed holes corresponding to the location of the bond pads at each of the individual semiconductor die formed as part of the wafer structure.

Abstract: A wafer scale semiconductor integrated circuit packaging technique provides a hermetic seal for the individual integrated circuit die formed as part of the wafer scale structure. A semiconductor wafer is manufactured to include a number of individual semiconductor die. Each individual die formed on the wafer includes a number of bond pads that are exposed on the die surface in various locations to provide electrical connections to the circuitry created on the die. The wafer further includes a planar glass sheet that is substantially the same size as the wafer, the glass sheet being adhered to the wafer using a suitable adhesive. The glass sheet has a number of pre-formed holes in it, the arrangement of the pre-formed holes corresponding to the location of the bond pads at each of the individual semiconductor die formed as part of the wafer structure.

Abstract: A large array probe/contact having spring characteristics for relieving stress in the contact caused, for example, by temperature change is fabricated using a unique combination of semiconductor fabrication operations. The contacts in the array have a “U” shaped resilient portion, are fixed at one end to a substrate and have an accessible low electrical noise contact tip. The contacts are encapsulated on the substrate in an elastomer to provide additional stress relief resilience, support and protection from damage during handling.

Abstract: A wafer scale semiconductor integrated circuit packaging technique provides a hermetic seal for the individual integrated circuit die formed as part of the wafer scale structure. A semiconductor wafer is manufactured to include a number of individual semiconductor die. Each individual die formed on the wafer includes a number of bond pads that are exposed on the die surface in various locations to provide electrical connections to the circuitry created on the die. The wafer further includes a planar glass sheet that is substantially the same size as the wafer, the glass sheet being adhered to the wafer using a suitable adhesive. The glass sheet has a number of pre-formed holes in it, the arrangement of the pre-formed holes corresponding to the location of the bond pads at each of the individual semiconductor die formed as part of the wafer structure.

Abstract: A large array probe/contact having spring characteristics for relieving stress in the contact caused, for example, by temperature change is fabricated using a unique combination of semiconductor fabrication operations. The contacts in the array have a “U” shaped resilient portion, are fixed at one end to a substrate and have an accessible low electrical noise contact tip. The contacts are encapsulated on the substrate in an elastomer to provide additional stress relief resilience, support and protection from damage during handling.

Abstract: A stack of integrated circuits in thin small outline packages (TSOP's) is constructed with an air space in between adjacent packages. The TSOP's have a plurality of connection terminals extending therefrom. A lead frame is disposed adjacent to the packages, positioned medially of the air space and having a plurality of connection terminals in registration with and in electric contact with the plurality of TSOP connection terminals. The TSOP's have a chip select terminal and several unused terminals. The lead frame has a strain-relieved conductor extending between the chip select terminal on a TSOP higher in the stack to the adjacent TSOP lower in the stack. Moreover, TSOP locating surfaces are included on the lead frame in the finished stack.

Abstract: A stack of integrated circuits in thin small outline packages (TSOP's) is constructed with an air space in between adjacent packages. The TSOP's have a plurality of connection terminals extending therefrom. A lead frame is disposed adjacent to the packages, positioned medially of the air space and having a plurality of connection terminals in registration with and in electric contact with the plurality of TSOP connection terminals. The TSOP's have a chip select terminal and several unused terminals. The lead frame has a strain-relieved conductor extending between the chip select terminal on a TSOP higher in the stack to the adjacent TSOP lower in the stack. Moreover, TSOP locating surfaces are included on the lead frame in the finished stack.