Abstract: A method for forming a conductor element comprising a Tl or Hg-based high temperature superconductor (HTSC) material, comprises providing at least one first precursor material within an outer sheath for the conductor element; providing at least one second precursor material within the conductor sheath and separated from the first precursor material(s) by a barrier layer formed from a Noble metal for example between the first and second precursor materials; and heating the conductor sheath containing the precursors to a temperature at which the barrier layer melts to allow the precursor materials to mix and react, or to a temperature at which one of the precursor material(s) diffuses through the barrier layer sufficiently allow the precursor materials to mix and react, to form the Tl or Hg-HTSC material within the outer conductor sheath.