Abstract: A method for producing polymeric diacetylene thin films having desirable nonlinear optical characteristics has been achieved by producing amorphous diacetylene polymeric films by simultaneous polymerization of diacetylene monomers in solution and deposition of polymerized diacetylenes on to the surface of a transparent substrate through which ultraviolet light has been transmitted. These amorphous polydiacetylene films produced by photo-deposition from solution possess very high optical quality and exhibit large third-order nonlinear optical susceptibilities, such properties being suitable for nonlinear optical devices such as waveguides and integrated optics.

Abstract: Process and apparatus for growing crystals using float zone techniques. A rod (34) of crystalline materials is disposed in a cylindrical container (36), with a space being left between the rod and container walls. The space is filled with an encapsulant (72), selected to have a slightly lower melting point than the crystalline material. The rod is secured to a container end cap (38) at one end and to a shaft (60) at its other end. A piston (64) slides over the rod and provides pressure to prevent loss of volatile components upon melting of the rod. Prior to melting the rod the container is first heated to melt the encapsulant, with any off-gas from this step being vented to a cavity behind the piston. The piston moves slightly forward owing to volume change upon melting of the encapsulant, and the vent passageway (74) is closed. The container is then moved longitudinally through a heated zone (32) to progressively melt sections of the rod as in conventional float zone processes.

Abstract: A crystal growth apparatus (10) having a heated spherical growth container (12) is filled with a crystalline material in solid or liquid form. The crystalline material is heated by resistance heating wire (58) to a predetermined temperature, whereupon the application of heat to the crystalline material is reduced and the accumulated heat is drawn off and dissipated by a seed crystal (76) attached to a rod (70) of heat conductive material, which in turn is attached to a heat dissipating member (72). This results in the formation of a single, defect-free crystal on seed crystal (76), which grows outward in a generally spherical configuration as more heat is removed.