Abstract: A method for fabricating an integrated circuit includes the steps of: providing a substrate having a semiconductor surface; providing a hardmask material on the semiconductor surface. For at least one masking level of the integrated circuit: providing a mask pattern for the masking level partitioned into a first mask and at least one second mask, the first mask providing features in a first grid pattern and the at least one second mask providing features in a second grid pattern, wherein the first and the second grid pattern have respective features which interleave with one another over at least one area; applying a first photoresist layer with the first mask; exposing the first grid pattern using the first mask; developing the first photoresist layer; etching the hardmask material to transfer the first grid pattern in the surface of the substrate; removing the first photoresist layer.

Abstract: A method for fabricating an integrated circuit includes the steps of: providing a substrate having a semiconductor surface; providing a hardmask material on the semiconductor surface. For at least one masking level of the integrated circuit: providing a mask pattern for the masking level partitioned into a first mask and at least one second mask, the first mask providing features in a first grid pattern and the at least one second mask providing features in a second grid pattern, wherein the first and the second grid pattern have respective features which interleave with one another over at least one area; applying a first photoresist layer with the first mask; exposing the first grid pattern using the first mask; developing the first photoresist layer; etching the hardmask material to transfer the first grid pattern in the surface of the substrate; removing the first photoresist layer.

Abstract: A method (300) for fabricating an integrated circuit includes the step of providing a substrate having a semiconductor surface (305). For at least one masking level (e.g. gate electrode, contact or via) of the integrated circuit, a mask pattern for the masking level is partitioned into a first mask and at least a second mask (310). The first mask provides features in a first grid pattern and the second mask provides features in a second grid pattern. The first and second grid pattern have respective features that interleave with one another over at least one area. A first photoresist film is applied onto the surface of the substrate (315). The first grid pattern is printed using the first mask (320). The second grid pattern is printed using the second mask (325). The first and said second grid pattern are then etched into the surface of the substrate (330).

Abstract: A method (300) for fabricating an integrated circuit includes the step of providing a substrate having a semiconductor surface (305). For at least one masking level (e.g. gate electrode, contact or via) of the integrated circuit, a mask pattern for the masking level is partitioned into a first mask and at least a second mask (310). The first mask provides features in a first grid pattern and the second mask provides features in a second grid pattern. The first and second grid pattern have respective features that interleave with one another over at least one area. A first photoresist film is applied onto the surface of the substrate (315). The first grid pattern is printed using the first mask (320). The second grid pattern is printed using the second mask (325). The first and said second grid pattern are then etched into the surface of the substrate (330).