Abstract: The present invention discloses a CVD (Chemical Vapor Deposition) process where nickel or alloys thereof, such as, Ni/Cu, Ni/Co, are deposited on metal surfaces which are capable of receiving nickel or alloys thereof, using an Iodide source, preferably an Iodide salt, such as, Ammonium Iodide or Copper Iodide, with at least one inert stand-off in contact with the receiving metal surface. This invention basically allows the CVD of nickel (Ni) on molybdenum (Mo) or tungsten (W) where the nickel source is physically isolated from the refractory metal surface to be plated using at least one inert material that is in floating contact with the refractory metal surface that needs to be coated with at least one layer of nickel or alloy thereof.

Abstract: A cost-effective surface metallization structure of a TCA carrier is produced by using a high-grit conducting paste to fill TSM vias in the TSM of the TCA carrier. This concept can be applied to alumina substrates with refractory metal conductors or to LCGC substrates with more noble metal conductors.

Abstract: A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

Abstract: The present invention discloses a CVD (Chemical Vapor Deposition) process where nickel or alloys thereof, such as, Ni/Cu, Ni/Co, are deposited on metal surfaces which are capable of receiving nickel or alloys thereof, using an Iodide source, preferably an Iodide salt, such as, Ammonium Iodide or Copper Iodide, with at least one inert stand-off in contact with the receiving metal surface. This invention basically allows the CVD of nickel (Ni) on molybdenum (Mo) or tungsten (W) where the nickel source is physically isolated from the refractory metal surface to be plated using at least one inert material that is in floating contact with the refractory metal surface that needs to be coated with at least one layer of nickel or alloy thereof.

Abstract: A brazing method for the direct bonding of a metallic item to a refractory metal without the need for an adhesion layer. The direct brazing process uses a Cu--Ag--Ni alloy which eliminates the need for the steps of plating a refractory metal to be bonded to a metallic material with a nickel layer (or other nickel-containing adhesion layer) and diffusion annealing the plated refractory metal prior to brazing. The brazed joint produced by the direct brazing method between a refractory metal and a metallic item has a substantially reduced layer of nickel in the as-brazed joint which improves the mechanical properties of the joint.

Abstract: A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

Abstract: An apparatus for accurately positioning and retaining at least one component, comprising a substantially rigid frame comprising a side having at least one opening therein that is larger in size than the component, a layer of compliant material attached to the side of the frame and having at least one opening therein, the frame opening and the layer opening cooperating to define a component receiving opening sized for receiving the component, said component receiving opening having an inner sidewall having at least a portion thereof consisting of compliant material, the compliant material being in substantially uniform contact with the side of the frame.

Abstract: An apparatus for accurately positioning and retaining at least one component, comprising a substantially rigid frame comprising a side having at least one opening therein that is larger in size than the component, a layer of compliant material attached to the side of the frame and having at least one opening therein, the frame opening and the layer opening cooperating to define a component receiving opening sized for receiving the component, said component receiving opening having an inner sidewall having at least a portion thereof consisting of compliant material, the compliant material being in substantially uniform contact with the side of the frame.

Abstract: A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.