Abstract: An embodiment of the invention may include a spliced stripline structure. The structure may include a first stripline including a signal line located between a top dielectric and a bottom dielectric. The top dielectric is in contact with a top ground plane. The bottom dielectric is in contact with a bottom ground plane. The structure may include a second stripline including a signal line located between a top dielectric and a bottom dielectric. The top dielectric is in contact with a top ground plane. The bottom dielectric is in contact with a bottom ground plane. The structure may include a joined portion connecting the first stripline to the second stripline. The joined portion the first stripline includes the bottom ground plane, the bottom dielectric, and at least one signal line. The joined portion the first stripline includes the bottom ground plane, the bottom dielectric, and at least one signal line.

Abstract: A structure that includes a signal trace embedded in a dielectric layer, the signal trace including a first contact pad at one end of the signal trace and a second contact pad at the other end of the signal trace. The dielectric layer has a first ground plane on a first surface and a second ground plane on a second opposing surface. A first conducting ground shield wall on a first side of the signal trace connects the first ground plane to the second ground plane. A second conducting ground shield wall on a second side of the signal trace connects the first ground plane to the second ground plane. The first ground plane, the second ground plane, the first conducting ground shield wall, and the second conducting ground shield wall enclose the signal trace.

Abstract: The present invention is directed to a microelectric device and especially a Field effect transistor comprising a source, drain, channel, an insulating layer overlying said channel containing at least one closed cage molecule, said closed cage molecule being capable of exhibiting a Coulomb blockade effect upon application of a voltage between said source and drain. Two different microelectronic devices are described containing the closed cage molecule, a logic cell and a memory cell.

Abstract: The present invention is directed to a microelectric device and especially a Field effect transistor comprising a source, drain, channel, an insulating layer overlying said channel containing at least one closed cage molecule, said closed cage molecule being capable of exhibiting a Coulomb blockade effect upon application of a voltage between said source and drain. Two different microelectronic devices are described containing the closed cage molecule, a logic cell and a memory cell.

Abstract: The present invention is directed to a microelectric device and especially a Field effect transistor comprising a source, drain, channel, an insulating layer overlying said channel containing at least one closed cage molecule, said closed cage molecule being capable of exhibiting a Coulomb blockade effect upon application of a voltage between said source and drain. Two different microelectronic devices are described containing the closed cage molecule, a logic cell and a memory cell.

Abstract: A quantum cryptographic key distribution (QKD) system splits discrete light signals from a laser source into a pair of light pulses that are orthogonally polarized with respect to each other, imparts a phase shift to one or both of these separate pulses during their round trip from the sender to the receiver and back, assures that the return pulses from the receiver are attenuated to single-photon pulses, recombines the phase-shifted pulses at the sender, and then detects from the recombined signal its polarization state, which is representative of the net phase shift imparted by the sender and receiver. The phase modulator at the receiver transmits only one polarization (e.g., vertical), but is used in a manner that permits it to equally modulate both polarization components of an arriving pulse. In this arrangement, when both components of a pulse reach the phase modulator at the receiver, they are both entirely vertically polarized and a phase shift is imparted at that time.