Abstract: A comparator receives first differentials, compares the differentials to a positive offset, and sets bits dependent upon whether the differentials are greater than the positive offset. The comparator receives second differentials, compares the differentials to a negative offset, and sets bits dependent upon whether the differentials are greater than the negative offset. The comparator compares the first bits to the second bits, and sets a mask dependent upon whether the first bits and the second bits are identical. The comparator receives subsequent differentials, compares the differentials to a zero offset, and sets bits dependent upon whether the differentials are greater than the zero offset. The subsequent bits are compared to the mask and corrected.

Abstract: A comparator receives a first read of voltage differentials from a series of bit cells, compares the first read to a positive voltage offset of a given magnitude, and set bits in a first bit stream to values that are dependent upon whether the voltage differential from a given bit cell is greater than the positive voltage offset. The first bit stream is then stored in a first register. The comparator also receives a second read of the voltage differentials from the series of bit cells, compares the second read to a negative voltage offset of the given magnitude, and sets bits in a second bit stream to values that are dependent upon whether the voltage differential from a given bit cell is greater than the positive voltage offset. The second bit stream is stored in a second register. The comparator then compares the first bit stream to the second bit stream, and set bits in a mask string dependent upon whether the bits in a given position of the first bit stream and the second bit stream are identical.

Abstract: A platform application specific integrated circuit (ASIC) including a base layer. The base layer generally comprises a predefined input/output (I/O) region and a predefined core region. The predefined input/output (I/O) region may comprise a plurality of pre-diffused regions disposed in the platform ASIC. The predefined core region may comprise one or more metal layers defining a plurality of power regions formed according to a custom design created after the base layer is fabricated. The base layer can be customized by depositing one or more metal layers.

Abstract: A method for producing a chip is disclosed. A first step of the method may involve fabricating the chip only up to and including a first metal layer during a first manufacturing phase such that an input/output (I/O) region of the chip has a plurality of slots, where each of the slots has a plurality of first transistors. A second step of the method may involve designing a plurality of upper metal layers above the first metal layer in response to a custom design created after the first fabricating has started, the upper metal layers interconnecting a plurality of the first transistors to form a plurality of mixed-signal building block functions. A third step of the method may involve fabricating the chip to add the upper metal layers during a second manufacturing phase.

Abstract: An apparatus comprising an integrated circuit having (i) a number of regions each pre-diffused and configured to be metal-programmed and (ii) a plurality of pins configured to connect the integrated circuit to a socket. A logic portion may be implemented on the integrated circuit (i) configured to implement integrated circuit operations and (ii) having one or more I/O connections and one or more supply connections. A first group of the pre-diffused regions are metal-programmed and coupled to said I/O connections. A second group of the pre-diffused regions are metal-programmed and coupled to the supply connections.

Abstract: An apparatus including a base layer of a platform application specific integrated circuit (ASIC), a mixed-signal function and a built-in self test (BIST) function. The base layer of the platform ASIC generally includes a plurality of pre-diffused regions disposed around a periphery of the platform ASIC. Each of the pre-diffused regions is generally configured to be metal-programmable. The mixed-signal function may include two or more sub-functions formed with a metal mask set placed over a first number of the plurality of pre-diffused regions. The BIST function may be formed with a metal mask set placed over a second number of the plurality of pre-diffused regions. The BIST function may be configured to test the mixed-signal function and present a digital signal indicating an operating condition of the mixed-signal function.

Abstract: A method for producing a chip is disclosed. A first step of the method may include fabricating the chip only up to and including a first metal layer such that a core region of the chip has an array of cells, each of the cells having a plurality of transistors. A second step generally involves designing a plurality of upper metal layers above the first metal layer in response to a custom design created after the first fabricating has started, the upper metal layers interconnecting a plurality of the cells to form (i) a mixed-signal module and (ii) a digital module, the mixed signal module generating at least one analog signal and at least one digital signal. In a third step, the method may include fabricating the chip to add the upper metal layers.

Abstract: An apparatus that may include a base layer of a platform application specific integrated circuit (ASIC) and a mixed-signal function. The base layer of the platform application specific integrated circuit (ASIC) generally comprises a plurality of pre-diffused regions disposed around a periphery of the platform ASIC. Each of the pre-diffused regions may be configured to be metal-programmable. The mixed-signal function may include two or more sub-functions formed with a metal mask set placed over a number of the plurality of pre-diffused regions.

Abstract: A method for interconnecting sub-functions of metal-mask programmable functions that includes the steps of (A) forming a base layer of a platform application specific integrated circuit (ASIC) comprising a plurality of pre-diffused regions disposed around a periphery of the platform ASIC, (B) forming two or more sub-functions of a function with a metal mask set placed over a number of the plurality of pre-diffused regions of the platform application specific integrated circuit and (C) configuring one or more connection points in each of the two or more sub-functions such that interconnections between the two or more sub-functions are tool routable in a single layer. Each of the pre-diffused regions is configured to be metal-programmable.

Abstract: A method for producing a chip is disclosed. A first step of the method may involve first fabricating the chip only up to and including a first metal layer such that a core region of the chip has an array of cells, each of the cells having a plurality of transistors. A second step of the method may be to design a plurality of upper metal layers above the first metal layer in response to a custom design created after the first fabricating has started, the upper metal layers interconnecting a plurality of the cells to form an electrostatic discharge clamp at a power domain crossing. A third step may include second fabricating the chip to add the upper metal layers.

Abstract: An apparatus comprising an integrated circuit and a logic portion. The integrated circuit may have a plurality of regions each (i) pre-diffused and configured to be metal-programmed and (ii) configured to connect the integrated circuit to a socket. The logic portion may be implemented on the integrated circuit. The plurality of metal programmable regions are each (i) independently programmable and (ii) located in one of said pre-diffused regions. Each of the metal programmable regions comprises (a) a regulator section configured to generate an operating voltage from a common supply voltage, (b) a logic section configured to implement integrated circuit functions and operate at the operating voltage, and (c) a level shifter configured to shift the operating voltage to an external voltage level.

Abstract: A radiation detector includes: a scintillator which produces UV photons in response to receiving radiation from a radiation producing source; and, a wide bandgap semiconductor device sensitive to the UV photons produced by the scintillator. The semiconductor device produces an electric signal as a function of the amount of UV photons incident thereon. Preferably, the electric signal is then measure, recorded and/or otherwise analyzed.

Abstract: A radiation detector includes: a scintillator which produces UV photons in response to receiving radiation from a radiation producing source; and, a wide bandgap semiconductor device sensitive to the UV photons produced by the scintillator. The semiconductor device produces an electric signal as a function of the amount of UV photons incident thereon. Preferably, the electric signal is then measure, recorded and/or otherwise analyzed.

Abstract: A field-testable integrated circuit that includes a plurality of analog signal channels for receiving a respective analog signal during a normal mode of operation is provided. Individual test circuits are built-in within the integrated circuit for selecting respective ones of the plurality of channels to receive predetermined reference signals during a test mode of operation while uninterruptedly providing the normal mode of operation in any remaining unselected channels. Each test circuit includes a channel decoder responsive to predetermined channel select signals for producing a respective channel decoder output signal. A multiplexer is responsive to predetermined reference select signals and to the decoder output signal for supplying during the test mode of operation a selected one of the predetermined reference signals to the respective analog channel being coupled to the individual test circuit therein.

Abstract: A decimation filter for filtering an externally derived stream of quantized electrical signals having a predetermined rate includes a coefficient generator responsive to a set of externally derived decimation-ratio select signals to provide a separate normalized coefficient signal at each respective one of a plurality of output ports. An accumulator is coupled to the coefficient generator to receive each normalized coefficient signal generated therein. The accumulator receives the stream of quantized electrical signals so as to produce, upon masking with respective ones of the received normalized coefficient signals, a plurality of accumulator output signals. An overflow detector is coupled to the accumulator to detect and correct any overflow condition arising in the accumulator.

Abstract: A decimation filter for filtering an externally derived stream of quantized electrical signals includes a coefficient generator responsive to a set of externally derived decimation-ratio select signals to provide a separate normalized coefficient signal at each respective one of a plurality of output ports. The coefficient generator employs a zero-fill circuit comprising first and second circuits which selectively ripple therethrough an scaling-control output signal from a demultiplexer unit in order to provide the normalized coefficient signals. An accumulator is coupled to the coefficient generator to receive each normalized coefficient signal generated therein. The accumulator receives the stream of quantized electrical signals so as to produce, upon masking with respective ones of the received normalized coefficient signals, a plurality of accumulator output signals. An overflow detector is coupled to the accumulator to detect and correct any overflow condition arising in the accumulator.

Abstract: A memory storage verification device for use with a memory storage unit in which electrical signals stored in selected memory locations are periodically accessed by an external processor. The device includes a register for storing the address of a memory location in the memory storage unit having a stored electrical signal, a comparator for comparing the address stored in the register with an electrical signal from the memory storage unit providing the address of the memory location being accessed by the external processor, and a latch including a trigger coupled to the output port of the comparator. The input port of the latch is coupled to the memory storage unit and receives the electrical signal stored in the memory location being accessed when the trigger receives a signal from the comparator.

Abstract: A programmable length decimation filter responsive to an externally derived stream of quantized electrical signals arriving at a predetermined rate comprises a counter, a resolution filter, and an accumulator. The resolution filter is responsive to the counter output signals, to an externally derived resolution select signal, and to the stream of quantized signals, and operates to mask selected quantized signals in order to provide resolution filter output signals to the accumulator on a plurality of resolution filter output ports. The resolution select signal allows for providing flexibility of operation regarding the tradeoff of the bandwidth of the decimation filter with its resolution capability.

Abstract: A system and method are provided for detecting and interrupting an out-of-balance (OOB) condition in a washing machine. The system includes pneumatic generating units for generating a predetermined fluidic pressure in response to excursions of a tub of the washing machine during a spin cycle; an actuator which is fluidly coupled to such generating units for providing an actuating position corresponding to the OOB condition; and a switch responsive to the actuator in its actuating position to deenergize a motor which spins the basket for holding the articles to be cleansed and thereby interrupt the OOB condition.

Abstract: A system for processing digital electrical power signals derived from at least one externally supplied, substantially continuous, substantially alternating, electrical signal having a primary or fundamental frequency, comprises: a multiply-accumulate arithmetic processor having three input ports with at least one input port for receiving the digital electrical power signals, an output port and a processor control port; a first memory unit for storing a plurality of processor control signals; a second and third memory unit each for storing a separate plurality of processor input signals; and a memory control unit having the capability to respectively couple the first memory unit to the processor control port, and the first processor input port to one of the second and third memory units for each cycle of the primary frequency so that newly received digital electrical power signals may be continually processed by the processor for a predetermined number of cycles.