Patents by Inventor Donald W. O'Neill

Donald W. O'Neill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor with improved tip profile and method of manufacture thereof
    Patent number: 7821044
    Abstract: Embodiments are an improved transistor structure and the method of fabricating the structure. In particular, a wet etch of an embodiment forms source and drain regions with an improved tip shape to improve the performance of the transistor by improving control of short channel effects, increasing the saturation current, improving control of the metallurgical gate length, increasing carrier mobility, and decreasing contact resistance at the interface between the source and drain and the silicide.
    Type: Grant
    Filed: January 15, 2008
    Date of Patent: October 26, 2010
    Assignee: Intel Corporation
    Inventors: Mark T. Bohr, Steven J. Keating, Thomas A. Letson, Anand S. Murthy, Donald W. O'Neill, Willy Rachmady
  • Transistor with improved tip profile and method of manufacture thereof
    Patent number: 7494858
    Abstract: Embodiments are an improved transistor structure and the method of fabricating the structure. In particular, a wet etch of an embodiment forms source and drain regions with an improved tip shape to improve the performance of the transistor by improving control of short channel effects, increasing the saturation current, improving control of the metallurgical gate length, increasing carrier mobility, and decreasing contact resistance at the interface between the source and drain and the silicide.
    Type: Grant
    Filed: June 30, 2005
    Date of Patent: February 24, 2009
    Assignee: Intel Corporation
    Inventors: Mark T. Bohr, Steven J. Keating, Thomas A. Letson, Anand S. Murthy, Donald W. O'Neill, Willy Rachmady
  • Transistor with improved tip profile and method of manufacture thereof
    Publication number: 20080135894
    Abstract: Embodiments are an improved transistor structure and the method of fabricating the structure. In particular, a wet etch of an embodiment forms source and drain regions with an improved tip shape to improve the performance of the transistor by improving control of short channel effects, increasing the saturation current, improving control of the metallurgical gate length, increasing carrier mobility, and decreasing contact resistance at the interface between the source and drain and the silicide.
    Type: Application
    Filed: January 15, 2008
    Publication date: June 12, 2008
    Inventors: Mark T. Bohr, Steven J. Keating, Thomas A. Letson, Anand S. Murthy, Donald W. O'Neill, Willy Rachmady