Patents by Inventor Donald Wollesen

Donald Wollesen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon oxide insulator (SOI) semiconductor having selectively linked body
    Patent number: 6627952
    Abstract: A silicon oxide insulator (SOI) device includes an SOI layer supported on a silicon substrate. A body region is disposed on the SOI layer, and the body region is characterized by a first conductivity type. Source and drain regions are juxtaposed with the body region, with the source and drain regions being characterized by a second conductivity type. A transition region is disposed near the body region above the SOI layer, and the conductivity type of the transition region is established to be the first conductivity type for suppressing floating body effects in the body region and the second conductivity type for isolating the body region. An ohmic connector contacts the transition region and is connected to a drain power supply when the source and drain are doped with N-type dopants. On the other hand, the power supply is a source power supply when the source and drain are doped with P-type dopants.
    Type: Grant
    Filed: December 31, 1999
    Date of Patent: September 30, 2003
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Donald Wollesen
  • Silicon oxide insulator (SOI) semiconductor having selectively linked body
    Patent number: 6020222
    Abstract: A silicon oxide insulator (SOI) device includes an SOI layer supported on a silicon substrate. A body region is disposed on the SOI layer, and the body region is characterized by a first conductivity type. Source and drain regions are juxtaposed with the body region, with the source and drain regions being characterized by a second conductivity type. A transition region is disposed near the body region above the SOI layer, and the conductivity type of the transition region is established to be the first conductivity type for suppressing floating body effects in the body region and the second conductivity type for isolating the body region. An ohmic connector contacts the transition region and is connected to a drain power supply when the source and drain are doped with N-type dopants. On the other hand, the power supply is a source power supply when the source and drain are doped with P-type dopants.
    Type: Grant
    Filed: December 16, 1997
    Date of Patent: February 1, 2000
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Donald Wollesen
  • Silicon oxide insulator (SOI) semiconductor having selectively linked body
    Patent number: 5994738
    Abstract: A silicon oxide insulator (SOI) device includes an SOI layer supported on a silicon substrate. A body region is disposed on the SOI layer, and the body region is characterized by a first conductivity type. Source and drain regions are juxtaposed with the body region, with the source and drain regions being characterized by a second conductivity type. A transition region is disposed near the body region above the SOI layer, and the conductivity type of the transition region is established to be the first conductivity type for suppressing floating body effects in the body region and the second conductivity type for isolating the body region. An ohmic connector contacts the transition region and is connected to a drain power supply when the source and drain are doped with N-type dopants. On the other hand, the power supply is a source power supply when the source and drain are doped with P-type dopants.
    Type: Grant
    Filed: January 5, 1999
    Date of Patent: November 30, 1999
    Assignee: Advanced Micro Devices
    Inventor: Donald Wollesen