Abstract: Open-Loop RF Transmitter Output Power Control for Increased Power Efficiency (NC #98068) method includes determining a desired RF output power and obtaining a battery voltage value; determining a supply control voltage, a bias control voltage and a highest power efficiency; and transmitting selected values of the supply control voltage and the bias control voltage to supply control circuitry and bias control circuitry.

Abstract: Open-Loop RF Transmitter Output Power Control for Increased Power Efficiency (NC#97507) system includes microprocessor, battery, bias control circuitry, supply control circuitry and power amplifier. Microprocessor receives desired RF output power and battery voltage value and transmits bias control voltage and supply control voltage. Bias control circuitry is operatively coupled to microprocessor and receives bias control voltage and transmits bias output voltage. Supply control circuitry is operatively coupled to battery and microprocessor, and receives battery voltage and supply control voltage, and transmits supply collector voltage. Power amplifier is operatively coupled to supply control circuitry and bias control circuitry via inductor, and receives supply collector voltage and bias output voltage, and transmits RF output signal in response to RF input signal, supply collector voltage and bias output voltage.

Abstract: An increased power efficient switching mode power amplifier system. The system includes a SMPA and an E/S reactive component. The SMPA includes a transistor, an RF choke and a tank circuit. The transistor has an emitter/source and is capable of receiving an input signal. The RF choke is operatively coupled to the transistor. The tank circuit is operatively coupled to the RF choke and the transistor. The E/S reactive component is operatively coupled to the emitter/source of the transistor of the SMPA. The E/S reactive component has a desired E/S degeneration reactive component value. A method for an increased power efficient switching mode power amplifier system is also described.

Abstract: A method for doping a strained heterojunction semiconductor device includes heating a substrate (16) having a strained mono-crystalline semiconductor region (22) to a temperature above room temperature. While the substrate (16) is heated, dopants are ion implanted into the strained mono-crystalline semiconductor region (22) to minimize implant related damage. Thereafter the substrate (16) is heated under non-steady state conditions for a time sufficient to activate the implanted dopant and anneal implant related damage while minimizing relaxation of the strained heterojunction.