Patents by Inventor Donato CORONA

Donato CORONA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated electronic device and method for manufacturing thereof
    Patent number: 9257550
    Abstract: An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: February 9, 2016
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Donato Corona, Nicolo′ Frazzetto, Antonio Giuseppe Grimaldi, Corrado Iacono, Monica Micciche′
  • INTEGRATED ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THEREOF
    Publication number: 20150325654
    Abstract: An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.
    Type: Application
    Filed: June 30, 2015
    Publication date: November 12, 2015
    Inventors: DONATO CORONA, NICOLO' FRAZZETTO, ANTONIO GIUSEPPE GRIMALDI, CORRADO IACONO, MONICA MICCICHE'
  • Integrated electronic device and method for manufacturing thereof
    Patent number: 9142666
    Abstract: An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: September 22, 2015
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Donato Corona, Nicolo′ Frazzetto, Antonio Giuseppe Grimaldi, Corrado Iacono, Monica Micciche′
  • Insulated gate semiconductor device with optimized breakdown voltage, and manufacturing method thereof
    Patent number: 8829609
    Abstract: An insulated gate semiconductor device, comprising: a semiconductor body having a front side and a back side opposite to one another; a drift region, which extends in the semiconductor body and has a first type of conductivity and a first doping value; a body region having a second type of conductivity, which extends in the drift region facing the front side of the semiconductor body; a source region, which extends in the body region and has the first type of conductivity; and a buried region having the second type of conductivity, which extends in the drift region at a distance from the body region and at least partially aligned to the body region in a direction orthogonal to the front side and to the back side.
    Type: Grant
    Filed: July 26, 2012
    Date of Patent: September 9, 2014
    Assignee: STMicroelectronics S.r.l.
    Inventors: Donato Corona, Giovanni Samma Trice, Sebastiano Amara, Salvatore Pisano, Antonio Giuseppe Grimaldi
  • INSULATED GATE SEMICONDUCTOR DEVICE WITH OPTIMIZED BREAKDOWN VOLTAGE, AND MANUFACTURING METHOD THEREOF
    Publication number: 20130026536
    Abstract: An insulated gate semiconductor device, comprising: a semiconductor body having a front side and a back side opposite to one another; a drift region, which extends in the semiconductor body and has a first type of conductivity and a first doping value; a body region having a second type of conductivity, which extends in the drift region facing the front side of the semiconductor body; a source region, which extends in the body region and has the first type of conductivity; and a buried region having the second type of conductivity, which extends in the drift region at a distance from the body region and at least partially aligned to the body region in a direction orthogonal to the front side and to the back side.
    Type: Application
    Filed: July 26, 2012
    Publication date: January 31, 2013
    Applicant: STMICROELECTRONICS S.R.L.
    Inventors: Donato Corona, Giovanni Sammatrice, Sebastiano Amara, Salvatore Pisano, Antonio Giuseppe Grimaldi
  • INTEGRATED ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THEREOF
    Publication number: 20120049902
    Abstract: An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.
    Type: Application
    Filed: August 30, 2011
    Publication date: March 1, 2012
    Applicant: STMICROELECTRONICS S.R.L.
    Inventors: Donato CORONA, Nicolo' FRAZZETTO, Antonio Giuseppe GRIMALDI, Corrado IACONO, Monica MICCICHE'