Abstract: An LED driver includes an embedded non-volatile memory (NVM) capable of being programmed and storing control data for setting a variety of features of the LED driver, such as the maximum current for driving the LEDs, analog parameters such as the resistance of the internal resistor for setting the reference current for the LEDs, and the operation modes of the charge pump of the LED driver. This enables implementation of multiple LED driver product options without the need for different metallization steps during the fabrication process for the LED driver.

Abstract: An LED driver includes an embedded non-volatile memory (NVM) capable of being programmed and storing control data for setting a variety of features of the LED driver, such as the maximum current for driving the LEDs, analog parameters such as the resistance of the internal resistor for setting the reference current for the LEDs, and the operation modes of the charge pump of the LED driver. This enables implementation of multiple LED driver product options without the need for different metallization steps during the fabrication process for the LED driver.

Abstract: A circuit comprising a positive switch and a steering network. The positive switch may be configured to present a first and a second switch signal in response to a first select signal. The steering network may be configured to present a high voltage output that may transition between a very high positive and a very low negative voltage, where the transition may respond to a high positive voltage input, a low negative voltage input, a first and second switch signal, and a second select signal.

Abstract: A high voltage switch for use in an EEPROM/FLASH memory that may be implemented using a twin-well process (e.g., using only P-channel transistors). The circuit comprises a positive switch configured to present a first and a second switch signal in response to (i) one or more select signals and (ii) an address signal and a second switch configured to present a programing voltage in response to (i) the select signals, (ii) the first and second switch signals and (iii) a high voltage source. A high voltage positive and negative pump may provide the high voltage source.

Abstract: A circuit comprising a first voltage shifter, a second voltage shifter and a comparator configured to control a switchable current source. The first voltage shifter may be configured to provide a first reference voltage signal in response to a reference input signal. The second voltage shifter may be configured to provide a second reference voltage signal in response to the reference input signal. The comparator may be configured to control a switchable current source in response to said first and second reference voltage signals.

Abstract: The present invention discloses a memory device having memory cells capable of storing three or more charge leves in said memory cell. The cells can be programmed according to a method including a single pulse charge level injection mechanism in said cells. The method does not require a program verify scheme, permits increased speed during programming, and reduces the area necessary for storing one bit of information. The memory device of the present invention further includes information write or storage or programmation means, information erase means and information read-out means. Another object of the present invention is to provide a method and a circuit that implements said method for determining the charge level of a memory cell having t possible levels (t being larger than or equal to three).