Abstract: An antenna device according to an embodiment of the present invention includes a dielectric layer, a first radiator disposed on the dielectric layer in a first direction, a second radiator formed in a shape different from that of the first radiator and disposed on the dielectric layer in a second direction, a first transmission line which extends in the first direction to be connected to the first radiator, and a second transmission line which extends in the second direction to be connected to the second radiator, and intersects the first transmission line with being physically or electrically spaced apart therefrom.

Abstract: The present invention relates to: a substituted thiazolidinedione derivative compound having a novel structure acting as a sterol regulatory element-binding protein-1 (SREBP1) inhibitor, a hydrate thereof, or a pharmaceutically acceptable salt thereof; and a pharmaceutical composition for preventing or treating cancer, comprising same as an active ingredient.

Abstract: A display device includes a pixel electrode in a light emission area, a pixel defining layer which is on the pixel electrode and defines the light emission area, a light emitting layer and a common electrode on the pixel electrode, a bank on the pixel defining layer, the bank including a first bank layer defining a lower portion of a bank opening corresponding to the light emission area and a second bank layer which defines an upper portion of the bank opening and a tip of the bank, the tip including upper and lower surfaces of the second bank layer, a lower inorganic encapsulation layer which is on the bank and includes an inorganic pattern on the common electrode and facing and spaced apart from both the upper and lower surfaces of the tip, and an auxiliary pattern between the lower surface of the tip and the inorganic pattern.

Abstract: A refrigerant module for a vehicle includes: a heat exchanger for exchanging heat between a refrigerant introduced therein and a working fluid; a valve manifold connected to the heat exchanger and having a refrigerant flow path formed inside to supply the refrigerant to the heat exchanger or to bypass the refrigerant; and a plurality of valve assemblies mounted on the valve manifold to control a flow of the refrigerant flowing in the refrigerant flow path.

Abstract: In an assembly system of an aircraft including a fuselage and a wing, the aircraft assembly system may include: a jig unit coupled to the wing to move integrally with the wing; a transfer unit connected to the jig unit and transferring the wing toward the fuselage; a position adjusting unit detachably connected to the jig unit and adjusting a position of the jig unit; and a measuring unit configured for measuring positions of the fuselage and the wing, wherein the fuselage may be relatively fixed to the movement of the wing, wherein the measuring unit may be configured to set a fuselage coordinate system and a wing coordinate system for the fuselage and the wing, respectively, wherein the position adjusting unit may be configured to move the jig unit so that the wing coordinate system coincides with the fuselage coordinate system.

Abstract: A method according to an embodiment of the present invention corresponds to a method for transmitting, by a gateway, a synchronization signal block (SSB) through a plurality of satellites, and may comprise the steps of: determining satellite identification SSBs for identifying a plurality of satellites, respectively; determining beam identification SSBs for identifying beams usable for the plurality of satellites, respectively; and controlling the satellite identification SSBs and the beam identification SSBs to be transmitted to the plurality of satellites, respectively, through a predetermined resource, wherein the satellite identification SSBs and each of the beam identification SSBs have different SSB indices from each other.

Abstract: A circuit board according to an embodiment includes a core layer including a first region and a second region, and antenna power supply wirings disposed on the core layer over the first region and the second region. The antenna power supply wirings may include a first portion extending in a first direction in the first region, a second portion extending in a second direction in the first region, and a third portion extending in the first direction in the second region, and an interval between the neighboring second portions of the antenna power supply wirings is 3 times or less of an interval between the neighboring third portions of the antenna power supply wirings.

Abstract: The present invention relates to a method for transmitting a synchronization signal block (SSB) through a plurality of satellites from a base station that can connect to a plurality of gateways, wherein the method may comprise the steps of: controlling transmission of first SSBs corresponding to the number of beams of each satellite through respective transmission beams in a first SSB cycle; determining a transmission beam of each of the satellites on the basis of a first measurement report for the respective beams received from a terminal; and controlling transmission of second SSBs for determining one combination including two or more gateways among the plurality of gateways in a second SSB cycle.

Abstract: An image sensing device that includes a reinforced structure is disclosed. The image sensing device includes a semiconductor substrate structured to include a pixel region including a plurality of unit pixels and a peripheral region located outside the pixel region, a plurality of microlenses disposed over the semiconductor substrate in the pixel region, a structural reinforcement layer disposed over the semiconductor substrate in the peripheral region, and a lens capping layer structured to cover the microlenses and at least of the structural reinforcement layer. The structural reinforcement layer includes a plurality of fingers each finger vertically structured to have a rounded upper end and laterally extend to have a predetermined length toward the pixel region. The fingers are consecutively arranged and connected to each other in a lateral direction, and side surfaces of fingers are in contact with side surfaces of immediately adjacent fingers.

Abstract: An image sensing device that includes a reinforced structure is disclosed. The image sensing device includes a semiconductor substrate structured to include a pixel region including a plurality of unit pixels and a peripheral region located outside the pixel region, a plurality of microlenses disposed over the semiconductor substrate in the pixel region, a structural reinforcement layer disposed over the semiconductor substrate in the peripheral region, and a lens capping layer structured to cover the microlenses and at least of the structural reinforcement layer. The structural reinforcement layer includes a plurality of fingers each finger vertically structured to have a rounded upper end and laterally extend to have a predetermined length toward the pixel region. The fingers are consecutively arranged and connected to each other in a lateral direction, and side surfaces of fingers are in contact with side surfaces of immediately adjacent fingers.

Abstract: A user terminal device and a display method thereof are provided. A method for controlling a clock according to an exemplary embodiment includes generating a clock, generating a comparison clock corresponding to a frequency of an external alternating current (AC) power source, counting a number of clock cycles according to the comparison clock, and controlling a generation period of the clock according to the counted number of clock cycles.

Abstract: A user terminal device and a display method thereof are provided. A method for controlling a clock according to an exemplary embodiment includes generating a clock, generating a comparison clock corresponding to a frequency of an external alternating current (AC) power source, counting a number of clock cycles according to the comparison clock, and controlling a generation period of the clock according to the counted number of clock cycles.

Abstract: A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor enlarges an area of a real image and prevents interference between adjacent pixels by forming a plurality of microlenses on a convex surface and forming a light blocking layer in the space between each of color filters. The CMOS image sensor can include photodiodes, a first planarization layer, R, G, B color filter layers, a second planarization layer having holes filled with a light blocking layer, and a plurality of microlenses.

Abstract: An image sensor and method of manufacturing the same are disclosed. A semiconductor substrate can be prepared comprising a photodiode region, a transistor region, and a floating diffusion region. A gate dielectric can be disposed under a surface of the semiconductor substrate in the transistor region. A first dielectric pattern can be provided having a portion above and a portion below the surface of the semiconductor substrate in the photodiode and the floating diffusion regions. A second dielectric can be disposed under the gate dielectric. The second dielectric can extend the depth of the gate dielectric into the semiconductor substrate to space the movement path of photoelectrons from the photodiode region to the floating diffusion region.

Abstract: Embodiments relate to a semiconductor device for an image sensor method of fabricating a semiconductor device for an image sensor having a micro lens. According to embodiments, the method may include forming a lower insulating film having cavities on a substrate, forming an upper insulating film having cavities on the lower insulating film, forming a protective insulating film having metal films on the upper insulating film, forming a number of color filters having a specified pattern on the protective insulating film, forming a planarization layer having a specified curvature on the color filters to bury the color filters in the planarization layer, and forming a number of micro lenses on the planarization layer at respective positions corresponding to the color filters.

Abstract: A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor enlarges an area of a real image and prevents interference between adjacent pixels by forming a plurality of microlenses on a convex surface and forming a light blocking layer in the space between each of color filters. The CMOS image sensor can include photodiodes, a first planarization layer, R, G, B color filter layers, a second planarization layer having holes filled with a light blocking layer, and a plurality of microlenses.

Abstract: A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor enlarges an area of a real image and prevents interference between adjacent pixels by forming a plurality of microlenses on a convex surface and forming a light blocking layer in the space between each of color filters. The CMOS image sensor can include photodiodes, a first planarization layer, R, G, B color filter layers, a second planarization layer having holes filled with a light blocking layer, and a plurality of microlenses.

Abstract: Provided is an image sensor and a method of fabricating the image sensor. The image sensor can comprise: a semiconductor substrate comprising a photodiode; a metal wiring layer disposed on the semiconductor substrate and comprising a metal wiring and an interlayer dielectric; a trench formed in the interlayer dielectric to correspond to the photodiode; and a color filter formed in the trench. Accordingly, the distance between the photodiode and the color filter can be significantly reduced by forming the color filter in the trench.

Abstract: An image sensor and method of manufacturing the same are disclosed. A semiconductor substrate can be prepared comprising a photodiode region, a transistor region, and a floating diffusion region. A gate dielectric can be disposed under a surface of the semiconductor substrate in the transistor region. A first dielectric pattern can be provided having a portion above and a portion below the surface of the semiconductor substrate in the photodiode and the floating diffusion regions. A second dielectric can be disposed under the gate dielectric. The second dielectric can extend the depth of the gate dielectric into the semiconductor substrate to space the movement path of photoelectrons from the photodiode region to the floating diffusion region.

Abstract: Embodiments relate to a semiconductor device for an image sensor method of fabricating a semiconductor device for an image sensor having a micro lens. According to embodiments, the method may include forming a lower insulating film having cavities on a substrate, forming an upper insulating film having cavities on the lower insulating film, forming a protective insulating film having metal films on the upper insulating film, forming a number of color filters having a specified pattern on the protective insulating film, forming a planarization layer having a specified curvature on the color filters to bury the color filters in the planarization layer, and forming a number of micro lenses on the planarization layer at respective positions corresponding to the color filters.