Abstract: Provided here are antibodies that bind Protein S, and methods of making and using such antibodies. In some embodiments, the Protein S antibodies provided herein are useful for treating a bleeding disorder or platelet disorder, or a condition characterized by reduced or impaired blood coagulation and/or clotting.

Abstract: An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.

Abstract: A positive active material, a method of preparing the same, and a lithium secondary battery including the positive active material.

Abstract: A positive active material, a method of preparing the same, and a lithium secondary battery including the positive active material.

Abstract: A trench isolation layer has rounded profiles on the top edges of a semiconductor substrate exposed by moats to prevent device characteristics from being degraded. The method of forming the trench isolation layer includes etching a device isolation trench in a semiconductor substrate using a hard mask layer pattern, forming a side wall oxide layer in the device isolation trench, forming a liner nitride layer over the side wall oxide layer, forming a buried insulating layer over the liner nitride layer to fill the device isolation trench, planarizing the buried insulating layer to expose the hard mask layer pattern, performing dry oxidation over a resultant structure in which the hard mask layer pattern is exposed through planarization, and removing the hard mask layer pattern.

Abstract: Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(Ti1-xSnx)O3 (BTS) or Ba(Ti1-xZrx)O3 (BTZ) on the lower electrode. An amorphous layer can be formed on the dielectric material layer. An upper electrode of the capacitor can be formed on the amorphous layer.

Abstract: Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(Ti1-xSnx)O3 (BTS) or Ba(Ti1-xZrx)O3 (BTZ) on the lower electrode. An amorphous layer can be formed on the dielectric material layer. An upper electrode of the capacitor can be formed on the amorphous layer.

Abstract: The present invention provides a green phosphor for fluorescent display having a composition represented by a chemical formula: xZnO+(2-x-y/2)Ga2O3+yAl2O3:zMn2+ where 0.8≦x<1.0; 0<y≦0.8, and 0<z≦0.1, wherein a part of gallium in nonstoichiometric zinc gallate base is substituted for aluminum and Mn2+ is added to the zinc gallate base. Also, the present invention provides a method of manufacturing said green phosphor for fluorescent display, the method comprising steps of: preparing a mixture by mixing uniformly zinc oxide, gallium oxide, aluminum oxide, alcohol and either an aqueous solution of manganese salt or an aqueous suspension of manganese oxide; preparing a compound by heating said mixture; and reducing said compound by re-heating said compound in a reducing atmosphere.

Abstract: The present invention provides a green phosphor for fluorescent display having a composition represented by a chemical formula: xZnO+(2-x-y/2)Ga2O3+yAl2O3: zMn2+ where 0.8≦x<1.0; 0<y≦0.8, and 0<z≦0.1, wherein a part of gallium in nonstoichiometric zinc gallate base is substituted for aluminum and Mn2+ is added to the zinc gallate base. Also, the present invention provides a method of manufacturing said green phosphor for fluorescent display, the method comprising steps of: preparing a mixture by mixing uniformly zinc oxide, gallium oxide, aluminum oxide, aqueous solution of manganese oxide or manganese salt and a predetermined solvent; preparing a compound by heating said mixture; and reducing said compound by re-heating said compound in a reducing atmosphere.

Abstract: Provided with a phosphor for a fluorescent display that includes at least one divalent transition metal and at least two trivalent metal added to SrTiO3 and having a formula of: SrTi1−x−yMxNyO3:zPr3+ wherein M represents the divalent transition metal selected from the group consisting of Zn, Mn, Co, Ni, Cu and Cd, N represents the trivalent metal selected from the group consisting of Ga, Al, In and B, and 0≦x≦0.1, 0≦y≦0.1 and 0≦z≦0.1.

Abstract: A dielectric ceramic composition having an empirical formula represented by (Sr.sub.l-2x Bi.sub.x Ti.sub.l-y W.sub.y)O.sub.3 wherein x is in a range of 0.0005 to 0.003 and y is in a range of 0.0015 to 0.009 for boundary layer condensers and a method for preparing the same which are comprising the steps of: mixing Bi.sub.2 O.sub.3 -WO.sub.3 frit powder with main component having an empirical formula represented by Sr.sub.l-2x Ti.sub.l-y O.sub.3 wherein x is in a range of 0.0005 to 0.003 and y is in a range of 0.0015 to 0.009, in a wet manner, the Bi.sub.2 O.sub.3 frit serving as a reducing agent; drying the resulting mixture; sintering the dried mixture at a temperature of 1,400 to 1,470.degree. C under a reducing atmosphere; and applying secondary thermal treatment to the sintered body at 1,250.degree. C are disclosed.