Patents by Inventor Dong Cheng Chen

Dong Cheng Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Elongated magnetoresistive tunnel junction structure
    Patent number: 10096767
    Abstract: A Magnetoresistive Tunnel Junction (MTJ) device includes an elongated MTJ structure formed onto a substrate, the MTJ structure including a magnetic reference layer and a tunnel barrier layer. The MTJ device also includes a number of discrete free magnetic regions disposed onto the tunnel barrier layer. The ratio of length to width of the elongated MTJ structure is such that the magnetic field of the magnetic reference layer is pinned in a single direction.
    Type: Grant
    Filed: March 9, 2013
    Date of Patent: October 9, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chwen Yu, Kai-Wen Cheng, Tien-Wei Chiang, Dong Cheng Chen
  • Elongated Magnetoresistive Tunnel Junction Structure
    Publication number: 20140252513
    Abstract: A Magnetoresistive Tunnel Junction (MTJ) device includes an elongated MTJ structure formed onto a substrate, the MTJ structure including a magnetic reference layer and a tunnel barrier layer. The MTJ device also includes a number of discrete free magnetic regions disposed onto the tunnel barrier layer. The ratio of length to width of the elongated MTJ structure is such that the magnetic field of the magnetic reference layer is pinned in a single direction.
    Type: Application
    Filed: March 9, 2013
    Publication date: September 11, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chwen Yu, Kai-Wen Cheng, Tien-Wei Chiang, Dong Cheng Chen