Abstract: Disclosed is a high-power sliding-mode triboelectric generator including a substrate; a positive electrode formed on the substrate; a positively charged body provided on the positive electrode and formed to be tilted at a predetermined angle from the substrate; a negatively charged body located to be opposite to the positively charged body and formed to be tilted at the same angle as in the positively charged body; a negative electrode provided on the negatively charged body and configured to support the negatively charged body; and at least one spacer formed between the positively charged body and the negatively charged body, is formed of an elastic body, and configured to maintain an interval between the positively charged body and the negatively charged body.

Abstract: Disclosed is a high-power sliding-mode triboelectric generator including a substrate; a positive electrode formed on the substrate; a positively charged body provided on the positive electrode and formed to be tilted at a predetermined angle from the substrate; a negatively charged body located to be opposite to the positively charged body and formed to be tilted at the same angle as in the positively charged body; a negative electrode provided on the negatively charged body and configured to support the negatively charged body; and at least one spacer formed between the positively charged body and the negatively charged body, is formed of an elastic body, and configured to maintain an interval between the positively charged body and the negatively charged body.

Abstract: Provided is an organic light emitting device including a nano composite layer. The organic light emitting device adopts a nano composite layer including an insulator and light emitting nano-particles within a device, thereby simultaneously insulating a control electrode and changing the color of light emitted from a light emitting layer, thereby improving external quantum efficiency. Further, the amount of electron holes and electrons injected into the light emitting layer may be adjusted through a voltage applied to the control electrode so as to secure a stable current when the device is operated. In addition, when compared to a conventional light emitting device, the surface area of positive and negative electrodes may be reduced so as to reduce reflectance with respect to external light.

Abstract: Provided is an organic light emitting device including a nano composite layer. The organic light emitting device adopts a nano composite layer including an insulator and light emitting nano-particles within a device, thereby simultaneously insulating a control electrode and changing the color of light emitted from a light emitting layer, thereby improving external quantum efficiency. Further, the amount of electron holes and electrons injected into the light emitting layer may be adjusted through a voltage applied to the control electrode so as to secure a stable current when the device is operated. In addition, when compared to a conventional light emitting device, the surface area of positive and negative electrodes may be reduced so as to reduce reflectance with respect to external light.

Abstract: According to an embodiment of the present invention, an OLED display includes a substrate, a first electrode, a hole transport layer, a hole blocking layer, an emitting layer, and a second electrode. The first electrode is formed on the substrate. The hole transport layer is formed on the first electrode and includes a first material having a first highest occupied molecular orbital (HOMO) level and a first lowest unoccupied molecular orbital (LUMO) level. The hole blocking layer is formed on the hole transport layer and includes a second material having a second HOMO level and a second LUMO level. The emitting layer is formed on the hole blocking layer and includes a third material having a third HOMO level and a third LUMO level. The second electrode is formed on the emitting layer. Herein, the second HOMO level is higher than the first HOMO level and the third HOMO level.

Abstract: An organic light emitting device according to embodiment of the present invention comprises: a substrate; a first electrode formed on the substrate; a light-emitting member formed on the first electrode, and comprising multi-layer structure; and a second electrode formed on the light-emitting member, wherein the second electrode comprises Mg—Ag alloy which contains Mg of 1-10 wt % and a concentration gradient of the Mg—Ag alloy is formed from the top of the emitting-light member.

Abstract: A manufacturing method of an organic light emitting diode (“OLED”) includes forming an anode on a substrate, forming an inorganic buffer layer on the anode, forming a hole transport layer on the buffer layer, forming a light emission layer on the hole transport layer, forming an electron transport layer on the light emission layer, and forming a cathode on the electron transport layer. The forming an inorganic buffer layer includes thermal evaporation and oxidation.

Abstract: According to an embodiment of the present invention, an OLED display includes a substrate, a first electrode, a hole transport layer, a hole blocking layer, an emitting layer, and a second electrode. The first electrode is formed on the substrate. The hole transport layer is formed on the first electrode and includes a first material having a first highest occupied molecular orbital (HOMO) level and a first lowest unoccupied molecular orbital (LUMO) level. The hole blocking layer is formed on the hole transport layer and includes a second material having a second HOMO level and a second LUMO level. The emitting layer is formed on the hole blocking layer and includes a third material having a third HOMO level and a third LUMO level. The second electrode is formed on the emitting layer. Herein, the second HOMO level is higher than the first HOMO level and the third HOMO level.

Abstract: An organic light emitting device and manufacturing method thereof includes a substrate; a first electrode formed on the substrate; a second electrode formed on the first electrode; an light emitting member interposed between the first electrode and the second electrode; and a photonic crystal member disposed in proximity to the substrate.

Abstract: A manufacturing method of an organic light emitting diode (“OLED”) includes forming an anode on a substrate, forming an inorganic buffer layer on the anode, forming a hole transport layer on the buffer layer, forming a light emission layer on the hole transport layer, forming an electron transport layer on the light emission layer, and forming a cathode on the electron transport layer. The forming an inorganic buffer layer includes thermal evaporation and oxidation.

Abstract: Disclosed is a method for forming a nano-crystal. In the above method, there is prepared a substrate having a metal film or a semiconductor film formed thereon. A focused-ion beam is irradiated onto a plurality of positions on a surface of the metal film or the semiconductor film, whereby the metal film or the semiconductor film is removed at a focal portion of the focused-ion beam but an atomic bond in the metal film or the semiconductor film is broken at an overlapping region of the focused-ion beams due to an radiation effect of the focused-ion beam to form the nano-crystal. The method allows a few nm or less-sized nano-crystals to be formed with ease and simplicity using the focused-ion beam. As a result, the formed nano-crystals come to have a binding energy capable of restraining thermal fluctuation phenomenon at room temperature and thereby it becomes possible to fabricate a tunneling transistor capable of being operated at room temperature.

Abstract: Disclosed is a method for fabricating a single electron tunneling transistor. In the above method, an insulating layer and a conductive layer are orderly formed on a substrate. The conductive layer is patterned such that the insulating layer is exposed, to form a T-shaped conductive pattern of which a first portion arranged in a vertical direction is connected to a middle portion of a second portion arranged in a horizontal direction. A focused-ion beam is irradiated onto the connected middle portion of the T-shaped conductive pattern such that the second portion is cut at a middle portion thereof and the first portion is separated from the first portion, to form nano-crystal regions respectively at a first cut portion of the first pattern and a second cut portion of the second pattern using an irradiation effect of the focused-ion beam.

Abstract: Disclosed is a method for forming a nano-crystal. In the above method, there is prepared a substrate having a metal film or a semiconductor film formed thereon. A focused-ion beam is irradiated onto a plurality of positions on a surface of the metal film or the semiconductor film, whereby the metal film or the semiconductor film is removed at a focal portion of the focused-ion beam but an atomic bond in the metal film or the semiconductor film is broken at an overlapping region of the focused-ion beams due to an radiation effect of the focused-ion beam to form the nano-crystal. The method allows a few nm or less-sized nano-crystals to be formed with ease and simplicity using the focused-ion beam. As a result, the formed nano-crystals come to have a binding energy capable of restraining thermal fluctuation phenomenon at room temperature and thereby it becomes possible to fabricate a tunneling transistor capable of being operated at room temperature.