Abstract: A semiconductor device having improved metal line structure has a first dielectric layer formed on a semiconductor substrate, a metal film pattern formed on the first dielectric layer, an interface protection layer on the metal film pattern, and a second dielectric layer on the interface protection layer, wherein the second dielectric layer contains a reactive material, e.g., fluorine, which is prevented by the interface protection layer from diffusing to the metal film pattern and reacting with the metal in the metal film pattern to form a damage film, e.g., metal fluoride, which is a highly resistive material that, if formed on the semiconductor device, would reduce the reliability of the metal film pattern and thus reduce the reliability of the semiconductor device as a whole.

Abstract: A semiconductor device having improved metal line structure has a first dielectric layer formed on a semiconductor substrate, a metal film pattern formed on the first dielectric layer, an interface protection layer on the metal film pattern, and a second dielectric layer on the interface protection layer, wherein the second dielectric layer contains a reactive material, e.g., fluorine, which is prevented by the interface protection layer from diffusing to the metal film pattern and reacting with the metal in the metal film pattern to form a damage film, e.g., metal fluoride, which is a highly resistive material that, if formed on the semiconductor device, would reduce the reliability of the metal film pattern and thus reduce the reliability of the semiconductor device as a whole.

Abstract: A semiconductor device having improved metal line structure has a first dielectric layer formed on a semiconductor substrate, a metal film pattern formed on the first dielectric layer, an interface protection layer on the metal film pattern, and a second dielectric layer on the interface protection layer, wherein the second dielectric layer contains a reactive material, e.g., fluorine, which is prevented by the interface protection layer from diffusing to the metal film pattern and reacting with the metal in the metal film pattern to form a damage film, e.g., metal fluoride, which is a highly resistive material that, if formed on the semiconductor device, would reduce the reliability of the metal film pattern and thus reduce the reliability of the semiconductor device as a whole.

Abstract: The present invention provides a structure and a method for formation of interconnect having a barrier layer, aluminum layer on the barrier layer, a reaction prevention layer on the aluminum layer, an antireflective coating layer on the reaction prevention layer, a dielectric layer, a via, a conductive plug, and another aluminum layer on the via and the dielectric layer. This structure prevents interconnects from contact resistance failure caused by an aluminum nitride film AlF, a titanium fluorine film TixFF, aluminum overetching, and aluminum consumption. As a result of this invention, via electromigration and aluminum line electromigration characteristics are improved in semiconductor devices.

Abstract: The present invention provides a structure and a method for formation of interconnect having a barrier layer, aluminum layer on the barrier layer, a reaction prevention layer on the aluminum layer, an antireflective coating layer on the reaction prevention layer, a dielectric layer, a via, a conductive plug, and another aluminum layer on the via and the dielectric layer. This structure prevents interconnects from contact resistance failure caused by an aluminum nitride film AlF, a titanium fluorine film Ti.sub.x F, aluminum overetching, and aluminum consumption. As a result of this invention, via electro-migration and aluminum line electromigration characteristics are improved in semiconductor devices.