Abstract: Embodiments are directed to a method of programming a semiconductor memory device, the memory device including: a plurality of memory cell transistors arranged in a plurality of transistor strings; a plurality of word lines, each word line connected to a corresponding memory cell transistor of each of the transistor strings; and a plurality of bit lines, each bit line connected to at least one of the transistor strings, the method comprising: applying a first voltage, and then applying a programming voltage to a selected word line corresponding to the selected memory cell transistor; and in advance of applying the first voltage to the selected word line, applying a second voltage to at least one neighboring word line that neighbors the selected word line, the neighboring word line connected to a neighboring, unselected memory cell transistor of the selected transistor string, to ensure precharging of a channel region of another, unselected transistor string between a first, unselected transistor of the unsele

Abstract: Example embodiments provide for an apparatus for testing various kinds of semiconductor devices having different distances between probes. Example embodiments also provide for a method of fabricating and using said apparatus. In accordance with example embodiments, an apparatus for testing a semiconductor device may include at least one cable penetrating a plate and extending from a surface of the plate. The at least one cable may include at least one signal line and at least one ground line. The apparatus may also include a pair of probes connected to the at least one signal line and configured to contact a first pad of a semiconductor device and a second pad of the semiconductor device. In accordance with example embodiments, the apparatus for testing a semiconductor device may also include a control unit on the surface of the plate configured to control a distance between the pair of probes.

Abstract: An apparatus for testing electrical characteristics includes a probe configured to contact a test object, a DC signal transmission line configured to transmit a DC signal to the probe, a frequency signal transmission line configured to transmit a frequency signal to the probe, and a line selection unit configured to selectively connect only one of the frequency signal transmission line and the DC signal transmission line to the probe at a time in accordance with a selected test.

Abstract: Embodiments are directed to a method of programming a semiconductor memory device, the memory device including: a plurality of memory cell transistors arranged in a plurality of transistor strings; a plurality of word lines, each word line connected to a corresponding memory cell transistor of each of the transistor strings; and a plurality of bit lines, each bit line connected to at least one of the transistor strings, the method comprising: applying a first voltage, and then applying a programming voltage to a selected word line corresponding to the selected memory cell transistor; and in advance of applying the first voltage to the selected word line, applying a second voltage to at least one neighboring word line that neighbors the selected word line, the neighboring word line connected to a neighboring, unselected memory cell transistor of the selected transistor string, to ensure precharging of a channel region of another, unselected transistor string between a first, unselected transistor of the unsele

Abstract: Example embodiments provide for an apparatus for testing various kinds of semiconductor devices having different distances between probes. Example embodiments also provide for a method of fabricating and using said apparatus. In accordance with example embodiments, an apparatus for testing a semiconductor device may include at least one cable penetrating a plate and extending from a surface of the plate. The at least one cable may include at least one signal line and at least one ground line. The apparatus may also include a pair of probes connected to the at least one signal line and configured to contact a first pad of a semiconductor device and a second pad of the semiconductor device. In accordance with example embodiments, the apparatus for testing a semiconductor device may also include a control unit on the surface of the plate configured to control a distance between the pair of probes.