Abstract: An organic light emitting device comprising an anode, a cathode, and a light emitting layer between the anode and the cathode, the light emitting layer including a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2, and having improved driving voltage, efficiency and lifetime.

Abstract: Provided is an organic light emitting device which includes a light emitting layer between an anode and a cathode, the light emitting layer comprising a compound of Chemical Formula 1 and a compound of Chemical Formula 2: where A?1 represents Chemical Formula 2-a, the dotted line is fused with an adjacent ring, Ar?1 is substituted or unsubstituted C6-60 aryl or C2-60 heteroaryl containing at least one of N, O and S, D is deuterium, and the other substituents are as defined in the specification. The organic light emitting device has excellent driving voltage, efficiency and lifespan when the compound of Chemical Formula 1 and the compound of Chemical Formula 2 are combined and used as a host for a red light emitting layer.

Abstract: As inputs of a controller of a direct current (DC)-DC converter are sampled for a predetermined time and thus two-dimensional state information in which one axis is an input physical quantity and the other axis is a time is generated, the two-dimensional state information is processed by a convolutional neural network to determine and output one of a plurality of control signals. An artificial intelligence control part may operate in accordance with a plurality of operation conditions or dynamically determined operation conditions by applying different artificial intelligence engines according to operation modes.

Abstract: An organic light emitting device having improved efficiency, driving voltage, and lifespan is provided. The organic light emitting device comprises an anode, a cathode, and a light emitting between the anode and the cathode, and the light emitting layer comprises a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2.

Abstract: A compound of Chemical Formula 1 or 2 and an organic light emitting device including the same are provided. The compound, when used as a material for an organic material layer of an organic light emitting device, provides improved efficiency, low driving voltage, and enhanced lifespan of the organic light emitting device.

Abstract: Provided is an organic light emitting device having improved driving voltage, efficiency and lifetime, the device comprising: an anode; a cathode; and a light emitting layer therebetween, wherein the light emitting layer comprises a compound of Chemical Formula 1 and a compound of Chemical Formula 2: wherein: any one of R?1 to R?12 is Chemical Formula 3, and the rest are hydrogen or deuterium: R1 is hydrogen, deuterium, or a substituted or unsubstituted C6-30 aryl or C2-60 heteroaryl containing one or more of N, O and S; Ar1, Ar2, Ar?1, and Ar?2 are each independently a substituted or unsubstituted C6-60 aryl or C2-60 heteroaryl containing one or more of N, O and S; and the other substituents are as defined in the specification.

Abstract: Provided is an organic light emitting device comprising an anode; a cathode; and a light emitting layer therebetween, the light emitting layer comprising a compound of Chemical Formula 1 and a compound of Chemical Formula 2, the device having improved driving voltage, efficiency and lifetime: wherein: any one of R?1 to R?12 is Chemical Formula 3, and the rest are hydrogen or deuterium: Ar1, Ar2, Ar?1, and Ar?2 are each independently a substituted or unsubstituted C6-60 aryl or C2-60 heteroaryl containing any one or more of N, O and S; R1 is hydrogen, deuterium, or a substituted or unsubstituted C6-60 aryl or C2-60 heteroaryl containing any one or more of N, O and S; and the other substituents are as defined in the specification.

Abstract: A compound represented by Chemical Formula 1 and an organic light emitting device including the same are provided. The compound is used as a material for an organic material layer of the organic light emitting device, and provides improved efficiency, low driving voltage, and increased lifespan of the organic light emitting device.

Abstract: Provided is an organic light-emitting device having improved driving voltage, efficiency and lifespan, the device comprising an anode, a cathode, and a light emitting layer including a light emitting layer that includes a compound of Chemical Formula 1 and a compound of Chemical Formula 2 between the anode and the cathode: where Ar1 and Ar2 are each independently a substituted or unsubstituted C6-60 aryl or C2-60 heteroaryl containing at least one of N, O and S; R1 is each independently hydrogen or deuterium; R2 to R6 and R9 to R11 are each independently hydrogen or deuterium; one of R7 and R8 is ?and the other is hydrogen or deuterium; Ar3 and Ar4 are each independently a substituted or unsubstituted C6-60 aryl or C2-60 heteroaryl containing at least one of N, O and S; and the other substituents are as defined in the specification.

Abstract: Disclosed is a method for fabricating a semiconductor device. The method includes: forming a first inter-layer insulation layer on a substrate provided with a plurality of cell contact plugs; selectively etching the first inter-layer insulation layer to form a plurality of first contact holes; performing a cleaning process to remove etch residues on lower portions of the first contact holes; forming insulating fences on inner walls of the first contact holes; forming a plurality of bit lines in contact with a group of the cell contact plugs through the respective first contact holes; forming a second inter-layer insulation layer over the plurality of bit lines; planarizing the second inter-layer insulation layer until an upper portion of each of the bit lines is exposed; and selectively etching the second inter-layer insulation layer in alignment with the bit lines, thereby obtaining a plurality of second contact holes.

Abstract: The present invention relates to a method for fabricating a semiconductor device using tungsten as a sacrificial hard mask material. The method includes the steps of: forming a layer on an etch target layer; forming a photoresist pattern on the layer; etching the layer by using the photoresist pattern as an etch mask along with use of a plasma containing CHF3 gas to form a sacrificial hard mask; and etching the etch target layer by using at least the sacrificial hard mask as an etch mask, thereby obtaining a predetermined pattern.

Abstract: A method for forming a contact hole in a semiconductor device includes preparing a substrate including a bottom structure; forming an insulation layer such that the insulation layer covers the bottom structure; forming a silicon-rich oxynitride layer on the insulation layer; forming a photoresist pattern on the silicon-rich oxynitride layer; etching the silicon-rich oxynitride layer using the photoresist pattern as an etch mask, thereby obtaining hard masks; and etching the insulation layer using the photoresist pattern and the hard masks as an etch mask to form a contact hole exposing a portion of the bottom structure.

Abstract: Disclosed is a method for fabricating a semiconductor device. The method includes: forming a first inter-layer insulation layer on a substrate provided with a plurality of cell contact plugs; selectively etching the first inter-layer insulation layer to form a plurality of first contact holes; performing a cleaning process to remove etch residues on lower portions of the first contact holes; forming insulating fences on inner walls of the first contact holes; forming a plurality of bit lines in contact with a group of the cell contact plugs through the respective first contact holes; forming a second inter-layer insulation layer over the plurality of bit lines; planarizing the second inter-layer insulation layer until an upper portion of each of the bit lines is exposed; and selectively etching the second inter-layer insulation layer in alignment with the bit lines, thereby obtaining a plurality of second contact holes.

Abstract: The present invention relates to a method for fabricating a semiconductor device using tungsten as a sacrificial hard mask material. The method includes the steps of: forming a layer on an etch target layer; forming a photoresist pattern on the layer; etching the layer by using the photoresist pattern as an etch mask along with use of a plasma containing CHF3 gas to form a sacrificial hard mask; and etching the etch target layer by using at least the sacrificial hard mask as an etch mask, thereby obtaining a predetermined pattern.

Abstract: Disclosed is a method for forming a plurality of contact holes in a semiconductor device. The method includes the steps of: forming an oxide-based layer on a substrate; forming an organic polymer layer on the oxide-based layer; forming a photoresist pattern on the organic polymer layer to form the plurality of contact holes; etching the organic polymer layer by using the photoresist pattern as an etch mask, thereby forming a hard mask; etching the oxide-based layer by using the photoresist pattern and the hard mask as an etch mask; and removing the photoresist pattern and the hard mask by performing a photoresist strip process, thereby obtaining the plurality of contact holes.

Abstract: The present invention discloses a method for fabricating a semiconductor device using an etch-resistant polymer. The method includes a step for the in-situ generation of a polymer layer on the exposed surfaces of a photoresist film pattern, a pad oxide film, and a hard mask layer. This polymer acts as a protective film and prevents photoresist erosion during trench etching processes and improves the etch selectivity. As a result, trench structures can be formed more easily and with improved dimensional control.

Abstract: The present invention discloses a method for fabricating a semiconductor device using an etch-resistant polymer. The method includes a step for the in-situ generation of a polymer layer on the exposed surfaces of a photoresist film pattern, a pad oxide film, and a hard mask layer. This polymer acts as a protective film and prevents photoresist erosion during trench etching processes and improves the etch selectivity. As a result, trench structures can be formed more easily and with improved dimensional control.

Abstract: A method for manufacturing a gate electrode, the method including the steps of forming upon a semiconductor substrate a polysilicon layer, a metal nitride layer, a tungsten layer and a photoresist layer, patterning the photoresist layer on the tungsten layer into a predetermined configuration, etching the tungsten layer, the metal nitride layer, a portion of the polysilicon layer into the predetermined configuration by using a mixed etchant of fluorine and chlorine species etchant, and patterning the remaining polysilicon layer into the predetermined configuration by using chlorine etchant.