Patents by Inventor Dong-Eun Jang
Dong-Eun Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11916456Abstract: A connection structure of a stator of a drive motor is configured to allow coils to be wound in a plurality of slots provided in a stator core and to connect the coils withdrawn from the slots. The coils are wound in the slots to form first-type structures and second-type structures configured such that withdrawal directions of three-phase (U-, W- and V-phase) withdrawal lines and N-phase withdrawal lines withdrawn from the slots of the first-type structures are opposite to withdrawal directions of three-phase (U-, W- and V-phase) withdrawal lines and N-phase withdrawal lines withdrawn from the slots of the second-type structures. The first-type structures and the second-type structures are disposed symmetrically to each other with respect to a reference line formed to divide the slots in half.Type: GrantFiled: December 1, 2021Date of Patent: February 27, 2024Assignees: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Ga Eun Lee, Dong Yeon Han, Yong Sung Jang, Deok Hwan Na, Jae Won Ha, Myung Kyu Jeong
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Patent number: 9385185Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate and a transistor on the substrate. The semiconductor devices may include a first guard ring of first conductivity type in the substrate adjacent the transistor. The semiconductor devices may include a second guard ring of second conductivity type opposite the first conductivity type in the substrate adjacent the first guard ring. Related semiconductor systems are also provided.Type: GrantFiled: May 6, 2015Date of Patent: July 5, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Hoon Chang, Dong-Eun Jang
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Patent number: 9245995Abstract: A semiconductor device includes a power metal-oxide-semiconductor (MOS) transistor including a semiconductor substrate, an impurity region on the semiconductor substrate, the impurity region having a first conductivity, a drift region in the impurity region, the drift region having the first conductivity, a body region in the impurity region adjacent to the drift region, the body region having a second conductivity different from the first conductivity, a drain extension insulating layer on the drift region, a gate insulating layer and a gate electrode sequentially stacked across a portion of the body region and a portion of the drift region, a drain extension electrode on the drain extension insulating layer, a drain region contacting a side of the drift region opposite to the body region, the drain region having the first conductivity, and a source region in the body region, the source region having the second conductivity.Type: GrantFiled: June 19, 2013Date of Patent: January 26, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-june Jang, Kyu-heon Cho, Min-hwan Kim, Dong-eun Jang, Hoon Chang
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Publication number: 20150236087Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate and a transistor on the substrate. The semiconductor devices may include a first guard ring of first conductivity type in the substrate adjacent the transistor. The semiconductor devices may include a second guard ring of second conductivity type opposite the first conductivity type in the substrate adjacent the first guard ring. Related semiconductor systems are also provided.Type: ApplicationFiled: May 6, 2015Publication date: August 20, 2015Inventors: Hoon Chang, Dong-Eun Jang
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Patent number: 9054180Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate and a transistor on the substrate. The semiconductor devices may include a first guard ring of first conductivity type in the substrate adjacent the transistor. The semiconductor devices may include a second guard ring of second conductivity type opposite the first conductivity type in the substrate adjacent the first guard ring. Related semiconductor systems are also provided.Type: GrantFiled: December 11, 2012Date of Patent: June 9, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Hoon Chang, Dong-Eun Jang
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Patent number: 8975693Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a buried layer a second conductivity type different from the first conductivity type on the substrate and an epitaxial layer of the second conductivity type on the buried layer. The device further includes a pocket well of the first conductivity type in the epitaxial layer, a first drift region in the epitaxial layer at least partially overlapping the pocket well, a second drift region in the epitaxial layer and spaced apart from the first drift region, and a body region of the first conductivity type in the pocket well. A gate electrode is disposed on the body region, the pocket well and the first drift region and has an edge overlying the epitaxial region between the first and second drift regions.Type: GrantFiled: November 21, 2012Date of Patent: March 10, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Eung-Kyu Lee, Jae-June Jang, Hoon Chang, Min-Hwan Kim, Sung-Ryoul Bae, Dong-Eun Jang
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Publication number: 20130341714Abstract: A semiconductor device includes a power metal-oxide-semiconductor (MOS) transistor including a semiconductor substrate, an impurity region on the semiconductor substrate, the impurity region having a first conductivity, a drift region in the impurity region, the drift region having the first conductivity, a body region in the impurity region adjacent to the drift region, the body region having a second conductivity different from the first conductivity, a drain extension insulating layer on the drift region, a gate insulating layer and a gate electrode sequentially stacked across a portion of the body region and a portion of the drift region, a drain extension electrode on the drain extension insulating layer, a drain region contacting a side of the drift region opposite to the body region, the drain region having the first conductivity, and a source region in the body region, the source region having the second conductivity.Type: ApplicationFiled: June 19, 2013Publication date: December 26, 2013Inventors: Jae-june JANG, Kyu-heon CHO, Min-hwan KIM, Dong-eun JANG, Hoon CHANG
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Patent number: 8610208Abstract: A semiconductor device includes a body region of a first conductivity type and a gate pattern disposed on the body region. The gate pattern has a linear portion extending in a first direction and having a uniform width and a bending portion extending from one end of the linear portion. The portion of a channel region located beneath the bending portion constitutes a channel whose length is greater than the length of the channel constituted by the portion of the channel region located beneath the linear portion.Type: GrantFiled: July 15, 2011Date of Patent: December 17, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Yongdon Kim, Eungkyu Lee, Sungryoul Bae, Soobang Kim, Dong-Eun Jang
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Publication number: 20130265086Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate and a transistor on the substrate. The semiconductor devices may include a first guard ring of first conductivity type in the substrate adjacent the transistor. The semiconductor devices may include a second guard ring of second conductivity type opposite the first conductivity type in the substrate adjacent the first guard ring. Related semiconductor systems are also provided.Type: ApplicationFiled: December 11, 2012Publication date: October 10, 2013Inventors: Hoon Chang, Dong-Eun Jang
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Publication number: 20130256794Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a buried layer a second conductivity type different from the first conductivity type on the substrate and an epitaxial layer of the second conductivity type on the buried layer. The device further includes a pocket well of the first conductivity type in the epitaxial layer, a first drift region in the epitaxial layer at least partially overlapping the pocket well, a second drift region in the epitaxial layer and spaced apart from the first drift region, and a body region of the first conductivity type in the pocket well. A gate electrode is disposed on the body region, the pocket well and the first drift region and has an edge overlying the epitaxial region between the first and second drift regions.Type: ApplicationFiled: November 21, 2012Publication date: October 3, 2013Applicant: Samsung Electronics Co., Ltd.Inventors: Eung-Kyu Lee, Jae-June Jang, Hoon Chang, Min-Hwan Kim, Sung-Ryoul Bae, Dong-Eun Jang
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Patent number: 8445357Abstract: Provided are a method of fabricating a semiconductor integrated circuit device and a semiconductor integrated circuit device fabricated using the method. The method includes: forming a mask film, which exposes a portion of a substrate, on the substrate; forming a first buried impurity layer, which contains impurities of a first conductivity type and of a first concentration, in a surface of the exposed portion of the substrate by using the mask film; removing the mask film; forming a second buried impurity layer, which contains impurities of a second conductivity type and of a second concentration, using blank implantation; and forming an epitaxial layer on the substrate having the first and second buried impurity layers, wherein the first concentration is higher than the second concentration.Type: GrantFiled: March 30, 2010Date of Patent: May 21, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Don Kim, Eung-Kyu Lee, Sung-Ryoul Bae, Soo-Bang Kim, Dong-Eun Jang
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Publication number: 20120037986Abstract: A semiconductor device includes a body region of a first conductivity type and a gate pattern disposed on the body region. The gate pattern has a linear portion extending in a first direction and having a uniform width and a bending portion extending from one end of the linear portion. The portion of a channel region located beneath the bending portion constitutes a channel whose length is greater than the length of the channel constituted by the portion of the channel region located beneath the linear portion.Type: ApplicationFiled: July 15, 2011Publication date: February 16, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yongdon Kim, Eungkyu Lee, Sungryoul Bae, Soobang Kim, Dong-Eun Jang
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Publication number: 20110241171Abstract: Provided are a method of fabricating a semiconductor integrated circuit device and a semiconductor integrated circuit device fabricated using the method. The method includes: forming a mask film, which exposes a portion of a substrate, on the substrate; forming a first buried impurity layer, which contains impurities of a first conductivity type and of a first concentration, in a surface of the exposed portion of the substrate by using the mask film; removing the mask film; forming a second buried impurity layer, which contains impurities of a second conductivity type and of a second concentration, using blank implantation; and forming an epitaxial layer on the substrate having the first and second buried impurity layers, wherein the first concentration is higher than the second concentration.Type: ApplicationFiled: March 30, 2010Publication date: October 6, 2011Applicant: Samsung Electronics Co., Ltd.Inventors: Yong-Don Kim, Eung-Kyu Lee, Sung-Ryoul Bae, Soo-Bang Kim, Dong-Eun Jang