Abstract: A monoclonal antibody or an antigen-binding fragment thereof according to an embodiment of the present invention can bind to lymphocyte-activation gene 3 (LAG-3) including a heavy chain variable region and a light chain variable region and inhibit the activity thereof. Thus it is expected to be useful for the development of immunotherapeutic agents for various disorders that are associated with LAG-3.

Abstract: An inkjet printing apparatus, method of printing ink using the same and method of fabricating display device are provided. The method of printing ink includes: ejecting ink in which a plurality of particles is dispersed from an inkjet head; irradiating the ejected ink with a first light and a second light having different wavelengths to acquire data on a first exit light and a second exit light emitted from the ink; calculating a concentration of the particles in the ink from the data on the first exit light and the second exit light; and checking whether the concentration is out of an error range from a reference value, where the first light has a wavelength of about 500 nm or less, and the second light has a wavelength of about 1000 nm or more.

Abstract: A storage controller for writing first data to a first memory cell by performing programming of the first memory cell N-times, where N is a positive integer greater than 1, includes a write amplification manager and a central processing unit. The write amplification manager checks whether the first data is invalid data before an Nth programming of the first memory cell is performed, and the central processing unit does not perform the N-th programming of the first memory cell when the first data is the invalid data.

Abstract: A storage system includes a non-volatile memory (NVM) device, having a memory cell array, and a storage controller. The storage controller receives a write command and data from a host and controls the NVM device to write the data in the memory cell array. Additionally, the storage controller determines a memory region of the memory cell array in which the data will be written, clusters a plurality of word lines into a plurality of groups on the basis of feature information of the plurality of word lines, rearranges an access order in units of groups according to the feature information, and accesses the word lines in the rearranged order to write the data in the memory region.

Abstract: A storage device includes an input stage receiving a first command, a queue manager allocating a first queue entry for the first command, a pre-processor storing the first command in the first queue entry and updating a task list with the first command and a core executing the first command in accordance with an order specified in the updated task list. At least one of the queue manager and the pre-processor is implemented in a customized logic circuit.

Abstract: A storage device includes an input stage receiving a first command, a queue manager allocating a first queue entry for the first command, a pre-processor storing the first command in the first queue entry and updating a task list with the first command and a core executing the first command in accordance with an order specified in the updated task list. At least one of the queue manager and the pre-processor is implemented in a customized logic circuit.

Abstract: A storage device includes an input stage receiving a first command, a queue manager allocating a first queue entry for the first command, a pre-processor storing the first command in the first queue entry and updating a task list with the first command and a core executing the first command in accordance with an order specified in the updated task list. At least one of the queue manager and the pre-processor is implemented in a customized logic circuit.

Abstract: A test system includes a host, a module to communicate with the host, and a test device to test the module while the module is connected to the host. The host includes a pulse width modulator circuit to supply a power to the module, and the test device varies a feedback resistance value provided to the pulse width modulator circuit.