Abstract: The present invention relates to a method for fabricating an amorphous-silicon thin film transistor, which comprises the steps of forming a gate electrode having sloped edges on a substrate, depositing a silicon oxide film as a gate insulation film on the substrate on which the gate electrode is formed, performing a nitrogen plasma treatment process on the surface of the silicon oxide film to form a silicon nitride film at the surface of the gate insulation film and thus to form the gate insulation film completely, depositing an amorphous silicon film on the gate insulation film to form an active layer, depositing a n+ type amorphous silicon film over the entire exposed surface of the resulting structure to form an ohmic layer, etching the n+ type amorphous silicon film and the amorphous silicon film in this order to leave the n+ type amorphous silicon film and the amorphous silicon film only on a portion of the gate insulation layer, forming a source region and a drain region respectively only on portions of

Abstract: A method of manufacturing a large-sized thin film transistor liquid crystal display panel in which a plurality of unit thin film transistor liquid crystal display panels are fabricated having a predetermined size on a polyimide substrate. A predetermined number of the unit thin film transistor liquid crystal display panels are arranged in a form of a matrix. The unit thin film transistor liquid crystal display panels are bonded or tiled by using an epoxy resin on a glass substrate to achieved the large-sized thin film transistor liquid crystal display panel. The interface between the unit thin film transistor liquid crystal display panels are filled up with polyimide. Gate bus lines and drain bus lines of the unit thin film transistor liquid crystal display panels arranged in the form of the matrix are electrically connected.

Abstract: A digital audio repetitive reproduction system provided with a compact disc operating circuit for operating a compact disc to read an audio signal from the compact disc, a radio frequency processing circuit for processing the read audio signal from the compact disc operating circuit in a radio frequency form, a digital signal processing circuit for processing the resultant radio frequency signal in a digital form, a digital/analog converter for converting the resultant digital audio data from the digital signal processing circuit into an analog audio signal, a microcomputer for outputting a plurality of control signals to control the entire operation of the system and a servo mechanism for controlling the compact disc operating circuit in response to the corresponding control signal from the microcomputer.

Abstract: A message displaying method upon power-off of a television is adapted to delay power-off execution for a few seconds while performing an OSD, in which the OSD message is stored in a microprocessor under the control of a designated program of the microprocessor so that a company can transmit advertising messages to the viewer whenever the users power off their televisions.

Abstract: A compact disk player comprising a pickup for reading data on a compact disk, a servo control device for controlling the pickup and a digital signal processing unit for processing the data on the compact disk read by the pickup in a digital form and generating a predetermined clock.

Abstract: A method of controlling crop pests and parasites is provided. The method includes the step of treating a crop with a sufficient quantity of Arkansas Fungus 18-A so as to control the pests. A substantially pure culture of Arkansas Fungus 18-a is also provided.

Abstract: The invention provides the method of manufacturing a self-aligned GaAs MESFET wherein the Si thin film formed by PECVD (Plasma Enhanced Chemical Vapor Deposition) and the Si.sub.3 N.sub.4 film formed by PCVD (Photo Chemical Vapor Deposition) onto the GaAs substrate are used as the capping film in the activation process, and then the self-aligned MESFET with the T type gate is manufactured through the selective chemical vapor deposition of the tungsten onto the Si thin film. As a result, the gap between the gate electrode and the n+ layer can be adjusted itself.