Abstract: The present disclosure provides autotaxin (ATX) inhibitor compounds and compositions including said compounds. The present disclosure also provides methods of using said compounds and compositions for inhibiting ATX. Also provided are methods of preparing said compounds and compositions, and synthetic precursors of said compounds.

Abstract: A computing device includes at least one memory, and at least one processor configured to generate, based on first analysis on a pathological slide image, first biomarker expression information, generate, based on a user input for updating at least some of results of the first analysis, second biomarker expression information about the pathological slide image, and control a display device to output a report including medical information about at least some regions included in the pathological slide image, based on at least one of the first biomarker expression information or the second biomarker expression information.

Abstract: The present invention relates to a method for checking a discharge inception voltage of a dielectric material, a method for forming a displacement field on the dielectric materials comprising applying a voltage the same as or higher than the discharge inception voltage generated by an external field obtained from the above to the dielectric material to which electrodes are connected, a method for forming plasma on the surfaces of the dielectric material comprising injecting reaction gases and applying a voltage the same as or higher than the discharge inception voltage obtained above to the dielectric material to which electrodes are connected, a method for forming a displacement field on the entire surface of the dielectric material comprising applying a voltage the same as or higher than the discharge inception voltage obtained above to the dielectric material to which electrodes are connected, and a dielectric material which is modified, in which the surfaces thereof are treated with plasma by the methods

Abstract: A method of manufacturing a patterned substrate for culturing cells. The method includes the steps of: (1) preparing a substrate, (2) forming a first plasma polymer layer by integrating a first precursor material on the substrate using a plasma, wherein the first plasma layer inhibits cell adsorption, and wherein the first precursor material is a siloxane-based compound having a siloxane functional group with the Si—O—Si linkage, (3) placing a shadow mask having a predetermined pattern on the first plasma polymer layer thus formed, and (4) forming a second patterned plasma polymer layer by integrating a second precursor material using a plasma, wherein the second patterned plasma layer permits culturing of cells, whereby the patterned substrate is obtained.

Abstract: The present invention relates to a preparation method of a tube and a transplantable polymer tube prepared by such method, which includes modifying the inner surface of a tube using plasma. A preparation method of a tube may include preparing a tube, modifying the inner surface of the tube using microplasma so as to have reactivity, forming a thin film layer on the modified surface of the tube to prevent aging or impart adhesiveness, and modifying the surface of the thin film layer using microplasma so as to enhance cell adhesion thereon.

Abstract: The present invention relates to a plasma polymerized thin film having high hardness and a low dielectric constant and a manufacturing method thereof, and in particular, relates to a plasma polymerized thin film having high hardness and a low dielectric constant for use in semiconductor devices, which has improved mechanical strength properties such as hardness and elastic modulus while having a low dielectric constant, and a manufacturing method thereof.

Abstract: The present invention relates to a method for checking a discharge inception voltage of a dielectric material, a method for forming a displacement field on the dielectric materials comprising applying a voltage the same as or higher than the discharge inception voltage generated by an external field obtained from the above to the dielectric material to which electrodes are connected, a method for forming plasma on the surfaces of the dielectric material comprising injecting reaction gases and applying a voltage the same as or higher than the discharge inception voltage obtained above to the dielectric material to which electrodes are connected, a method for forming a displacement field on the entire surface of the dielectric material comprising applying a voltage the same as or higher than the discharge inception voltage obtained above to the dielectric material to which electrodes are connected, and a dielectric material which is modified, in which the surfaces thereof are treated with plasma by the methods

Abstract: The present invention relates to a plasma polymerized thin film having high hardness and a low dielectric constant and a manufacturing method thereof, and in particular, relates to a plasma polymerized thin film having high hardness and a low dielectric constant for use in semiconductor devices, which has improved mechanical strength properties such as hardness and elastic modulus while having a low dielectric constant, and a manufacturing method thereof.

Abstract: This invention relates to a polymer/inorganic multi-layer encapsulation film, and more particularly, to a multi-layer encapsulation film, which includes a plasma polymer thin film layer formed using a cross-shaped precursor having Si—O bonding and an inorganic thin film layer, and ensures flexibility and has improved encapsulation.

Abstract: The present invention relates to a method of manufacturing a patterned substrate for culturing cells, comprising the steps of: (1) preparing a substrate; (2) forming a first plasma polymer layer by integrating a first precursor material using a plasma on the substrate; (3) placing a shadow mask having a predetermined pattern on the first plasma polymer layer; and (4) forming a second patterned plasma polymer layer by integrating a second precursor material using a plasma.

Abstract: The present invention relates to a plasma polymerized thin film having high hardness and a low dielectric constant and a manufacturing method thereof, and in particular, relates to a plasma polymerized thin film having high hardness and a low dielectric constant for use in semiconductor devices, which has improved mechanical strength properties such as hardness and elastic modulus while having a low dielectric constant, and a manufacturing method thereof.

Abstract: The present invention relates to a method for fabricating a patterned substrate for a cell culture, comprising the steps of: (1) preparing a substrate; (2) depositing a plasma polymer layer by using a precursor material on the substrate; (3) placing a shadow mask having a predetermined pattern on the plasma polymer layer; (4) treating the substrate, having the shadow mask placed thereon, with a reactive gas using plasma; and (5) removing the shadow mask from the substrate, and a patterned substrate for the cell culture fabricated thereby. The invention also relates to a method for a cell culture with a pattern, comprising the step of culturing cells on the patterned substrate for the cell culture, and a patterned cell chip, and a method of screening a material having an activity of inducing or promoting angiogenesis using the patterned cell chip.

Abstract: The present invention relates to a preparation method of a tube and a transplantable polymer tube prepared by such method, which includes modifying the inner surface of a tube using plasma. A preparation method of a tube may include preparing a tube, modifying the inner surface of the tube using microplasma so as to have reactivity, forming a thin film layer on the modified surface of the tube to prevent aging or impart adhesiveness, and modifying the surface of the thin film layer using microplasma so as to enhance cell adhesion thereon.

Abstract: This invention relates to a polymer/inorganic multi-layer encapsulation film, and more particularly, to a multi-layer encapsulation film, which includes a plasma polymer thin film layer formed using a cross-shaped precursor having Si—O bonding and an inorganic thin film layer, and ensures flexibility and has improved encapsulation.

Abstract: The present invention relates to a method of manufacturing a patterned substrate for culturing cells, comprising the steps of: (1) preparing a substrate; (2) forming a first plasma polymer layer by integrating a first precursor material using a plasma on the substrate; (3) placing a shadow mask having a predetermined pattern on the first plasma polymer layer; and (4) forming a second patterned plasma polymer layer by integrating a second precursor material using a plasma.

Abstract: Disclosed herein are a protein chip substrate and a method for manufacturing the protein chip substrate. The method includes deposition of plasma polymerized ethylenediamine (PPEDA) having an amine group on plasma polymerized cyclohexnane (PPCHex) by inductively coupled plasma-chemical vapor deposition (ICP-CVD), thereby preventing non-specific adsorption of proteins on a slide surface.

Abstract: Provided is a moving machine including: a moving belt forming a first endless track by connecting both ends of a tube having a second endless track; a first drive module coupled to both inner sides of the first endless track to rotate the first endless track and the second endless track; a frame coupled to the first drive module to provide a predetermined tension to the first endless track; and a controller for controlling the first drive module.

Abstract: The present invention relates to a method of manufacturing a low-k thin film and the low-k thin film manufactured therefrom. More specifically, the method of manufacturing a low-k thin film in accordance with an embodiment of the present invention includes subjecting thin film, which is formed by plasma polymerization, to post-heat treatment using an RTA device, and low-k thin film manufactured therefrom. A method of manufacturing a low-k thin film in accordance with an embodiment of the present invention includes: evaporating a precursor solution including decamethylcyclopentasiloxane and cyclohexane in a bubbler; inflowing the evaporated precursor from the bubbler to a plasma deposition reactor; depositing a plasma-polymerized thin film on a substrate in the reactor by using a plasma in the reactor; and post-heat-treating by an RTA device.

Abstract: Disclosed herein are a protein chip substrate and a method for manufacturing the protein chip substrate. The method includes deposition of plasma polymerized ethylenediamine (PPEDA) having an amine group on plasma polymerized cyclohexnane (PPCHex) by inductively coupled plasma-chemical vapor deposition (ICP-CVD), thereby preventing non-specific adsorption of proteins on a slide surface.