Abstract: The present invention resides in a method of and apparatus suitable for forming an O3-TEOS oxide film on a substrate. First, the O3-TEOS oxide is deposited on an underlying film at such a high temperature that the morphology of the first O3-TEOS oxide film is not dependent on the material of the underlying film. Then, the O3-TEOS oxide is deposited at a substantially lower temperature so that the deposition can occur at a high rate. The apparatus includes at least two susceptors or heaters, which are configured or can be controlled to produce the different temperatures under which the depoition occurs. Because the O3-TEOS film is formed at least two different temperatures, i.e., a high temperature and a low temperature, the base material dependence of the O3-TEOS film is eliminated and yet a high level of productivity can be sustained.

Abstract: A method and an apparatus for removing particulate contaminant are provided in order to ensure high purity during a tungsten suicide deposition process. The method for removing particulate contaminant in tungsten silicide deposition process using SiH4 as silicon source gas and NF3 as cleaning gas, includes purging a carrier gas line for an SiH4 silicon source gas to remove the contaminant in the chamber and carrier gas line when the carrier gas is supplied with the chamber, and the NF3 cleaning gas is supplied to the chamber to form plasma. After a plasma cleaning, the gas line flowing reaction gas responding to the SiH4 is purged to remove the contaminant in the chamber and the reaction gas line. As a result, any particulate contaminant is removed or remains at a minimum level that has no effect on the tungsten silicide deposition process.