Patents by Inventor Dong Geun Shin

Dong Geun Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11961849
    Abstract: A display device includes a base layer; a first pattern disposed on the base layer; an insulating layer disposed on the first pattern and including layers; and a second pattern disposed on the insulating layer. At least two of the layers of the insulating layer include a same material.
    Type: Grant
    Filed: June 8, 2021
    Date of Patent: April 16, 2024
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Keum Hee Lee, Dong Hoon Shin, June Whan Choi, Seung Sok Son, Woo Geun Lee
  • Publication number: 20230155069
    Abstract: Provided herein may be a display device and a method of fabricating the same. The display device may include a substrate including pixels, color filters disposed on the substrate and overlapping the pixels, protrusion patterns disposed on a boundary between the pixels, with a step difference formed between the protrusion patterns and the color filters, and an overcoat layer formed with a uniform thickness on the color filters and the protrusion patterns.
    Type: Application
    Filed: June 10, 2022
    Publication date: May 18, 2023
    Applicant: Samsung Display Co., LTD.
    Inventors: Dong Geun SHIN, Tae Min KIM, Bong Sung SEO, Gi Hoon YANG, Seul Gee LEE, Ho LIM, Suk Kung CHEI
  • Publication number: 20230009629
    Abstract: The display device comprises a light emitting element layer on a substrate and configured to emit light, a wavelength control layer on the light emitting element layer and configured to convert a wavelength of the light, a color filter layer on the wavelength control layer, and an anti-reflection layer on the color filter layer, wherein the anti-reflection layer includes a first inorganic layer on the color filter layer, a second inorganic layer on the first inorganic layer, and a coating layer on the second inorganic layer and including a dye.
    Type: Application
    Filed: March 30, 2022
    Publication date: January 12, 2023
    Inventors: Seul Gee LEE, Tae Min KIM, Bong Sung SEO, Dong Geun SHIN, Gi Hoon YANG, Seung Hee LEE, Ho LIM
  • Publication number: 20220077253
    Abstract: A display device includes a bank including an opening defining pixels, light emitting elements disposed in the pixels, a color conversion layer disposed on the light emitting elements in the opening, a capping layer overlapping the color conversion layer, and a color filter layer disposed on the capping layer. The color filter layer includes a low refractive material.
    Type: Application
    Filed: March 25, 2021
    Publication date: March 10, 2022
    Applicant: Samsung Display Co., LTD.
    Inventors: Gi Hoon YANG, Tae Min KIM, Bong Sung SEO, Dong Geun SHIN, Ho LIM
  • Publication number: 20210395102
    Abstract: The present invention provides a method for manufacturing a composite carbonate in a semi-dry manner by using combustion ash and, more specifically, provides a method for manufacturing a composite carbonate in a semi-dry manner by using combustion ash, the method comprising a step of adding a small amount of water to combustion ash containing calcium ions in an atmosphere of carbon dioxide. According to the present invention, carbon mineralization is carried out in a semi-dry manner by the manufacturing method, so that the composite carbonate can be efficiently produced. In addition, the composite carbonate can be utilized as a component for a concrete composition.
    Type: Application
    Filed: March 12, 2019
    Publication date: December 23, 2021
    Inventors: Woo Teck KWON, Jung Hyun KIM, Yoon Joo LEE, Dong Geun SHIN, Jung Won BANG
  • Patent number: 10138127
    Abstract: A method of fabricating silicon carbide powder according to the first embodiment includes preparing a silicon carbide molded member by molding a silicon carbide material; preparing a silicon carbide agglomerate member by pulverizing the silicon carbide molded member; and preparing the silicon carbide powder by heat-treating the silicon carbide agglomerate member. A method of fabricating silicon carbide powder according to the second embodiment includes preparing a primary material having a first grain size and including silicon carbide; preparing a secondary material having a second grain size by agglomerating the primary material; and preparing the silicon carbide powder by heat-treating the secondary material.
    Type: Grant
    Filed: December 13, 2012
    Date of Patent: November 27, 2018
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Dong Geun Shin
  • Patent number: 9920450
    Abstract: A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: March 20, 2018
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Byung Sook Kim, Bum Sup Kim, Kyoung Seok Min, Dong Geun Shin, Seo Yong Ha, Jung Eun Han
  • Patent number: 9840420
    Abstract: A method for manufacturing a silicon carbide powder according to the embodiment includes forming a mixture by mixing a silicon (Si) source containing silicon with a solid carbon (C) source or a C source containing an organic carbon compound; heating the mixture; cooling the mixture; and supplying hydrogen gas into the mixture.
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: December 12, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jung Eun Han, Dong Geun Shin, Byung Sook Kim
  • Patent number: 9702058
    Abstract: Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible to receive a raw material, a holder disposed at an upper portion of the crucible to fix a seed, and a filter part in the crucible. The filter part is spaced apart from a surface of the raw material.
    Type: Grant
    Filed: June 13, 2012
    Date of Patent: July 11, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Dong Geun Shin, Chang Hyun Son
  • Patent number: 9540744
    Abstract: An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material; and a filter part for selectively filtering a specific component in the crucible, wherein the filter part comprises a polymer.
    Type: Grant
    Filed: June 20, 2012
    Date of Patent: January 10, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Dong Geun Shin, Chang Hyun Son
  • Patent number: 9534316
    Abstract: Disclosed are silicon carbide powders and a method of preparing the same. The method includes forming a mixture by mixing a silicon (Si) source, a carbon (C) source, and a silicon carbide (SiC) seed, and reacting the mixture. The silicon carbide (SiC) powders include silicon carbide (SiC) grains having a ?-type crystal phase and a grain size in a range of about 5 ?m to about 100 ?m.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: January 3, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Byung Sook Kim, Dong Geun Shin, Bum Sup Kim, Jung Eun Han
  • Patent number: 9440859
    Abstract: A silicon carbide powder includes at least one group selected from a first group comprising an alpha phase silicon carbide pulverulent body of which a granule size (D50) is greater than 0 ?m and less than 45 ?m with impurities less than 10 ppm, a second group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 45 ?m and less than 75 ?m with impurities less than 10 ppm, and a third group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 75 ?m and less than 110 ?m with impurities less than 10 ppm. In addition, a method for preparing a silicon carbide powder includes adding seeds to a beta silicon carbide powder, and forming an alpha silicon carbide powder by heat treating the beta silicon carbide powder.
    Type: Grant
    Filed: July 10, 2013
    Date of Patent: September 13, 2016
    Assignees: LG INNOTEK CO., LTD, RESEARCH BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Byung Sook Kim, Dong Geun Shin, Jung Eun Han, Kyoung Seok Min
  • Publication number: 20150218004
    Abstract: A method for preparing a silicon carbide power includes collecting a mixture powder by mixing a carbon source and a silicon source, synthesizing a first silicon carbide powder by heating the mixture powder, forming an agglomerated powder by agglomerating the first silicon carbide powder, and forming a second silicon carbide powder, which has larger particles than the first silicon carbide powder, by heating the agglomerated powder.
    Type: Application
    Filed: July 10, 2013
    Publication date: August 6, 2015
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Jung Eun Han, Dong Geun Shin, Byung Sook Kim, Kyoung Seok Min
  • Publication number: 20150218005
    Abstract: A method for preparing a silicon carbide powder includes adding seeds to a beta silicon carbide powder, and forming an alpha silicon carbide powder by heat treating the beta silicon carbide powder.
    Type: Application
    Filed: July 10, 2013
    Publication date: August 6, 2015
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Byung Sook Kim, Dong Geun Shin, Jung Eun Han, Kyoung Seok Min
  • Publication number: 20140367897
    Abstract: A method of fabricating silicon carbide powder according to the first embodiment includes preparing a silicon carbide molded member by molding a silicon carbide material; preparing a silicon carbide agglomerate member by pulverizing the silicon carbide molded member; and preparing the silicon carbide powder by heat-treating the silicon carbide agglomerate member. A method of fabricating silicon carbide powder according to the second embodiment includes preparing a primary material having a first grain size and including silicon carbide; preparing a secondary material having a second grain size by agglomerating the primary material; and preparing the silicon carbide powder by heat-treating the secondary material.
    Type: Application
    Filed: December 13, 2012
    Publication date: December 18, 2014
    Inventor: Dong Geun Shin
  • Publication number: 20140363675
    Abstract: Disclosed are silicon carbide powders and a method of preparing the same. The method includes forming a mixture by mixing a silicon (Si) source, a carbon (C) source, and a silicon carbide (SiC) seed, and reacting the mixture. The silicon carbide (SiC) powders include silicon carbide (SiC) grains having a ?-type crystal phase and a grain size in a range of about 5 ?m to about 100 ?m.
    Type: Application
    Filed: January 18, 2013
    Publication date: December 11, 2014
    Inventors: Byung Sook Kim, Dong Geun Shin, Bum Sup Kim, Jung Eun Han
  • Publication number: 20140356274
    Abstract: A method for manufacturing a silicon carbide powder according to the embodiment includes forming a mixture by mixing a silicon (Si) source containing silicon with a solid carbon (C) source or a C source containing an organic carbon compound; heating the mixture; cooling the mixture; and supplying hydrogen gas into the mixture.
    Type: Application
    Filed: December 14, 2012
    Publication date: December 4, 2014
    Inventors: Jung Eun Han, Dong Geun Shin, Byung Sook Kim
  • Publication number: 20140331917
    Abstract: A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.
    Type: Application
    Filed: December 14, 2012
    Publication date: November 13, 2014
    Inventors: Byung Sook Kim, Bum Sup Kim, Kyoung Seok Min, Dong Geun Shin, Seo Yong Ha, Jung Eun Han
  • Publication number: 20140290580
    Abstract: Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible to receive a raw material, a holder disposed at an upper portion of the crucible to fix a seed, and a filter part in the crucible. The filter part is spaced apart from a surface of the raw material.
    Type: Application
    Filed: June 13, 2012
    Publication date: October 2, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Dong Geun Shin, Chang Hyun Son
  • Publication number: 20140283735
    Abstract: A method for growing an ingot according to the embodiment includes filling a first powder in a crucible; raising a temperature of the crucible; forming a second powder by grain-growing the first powder; and growing the ingot by sublimating the second powder.
    Type: Application
    Filed: July 26, 2012
    Publication date: September 25, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Kyoung Seok Min, Dong Geun Shin