Abstract: A semiconductor device includes a spacer having a nitride/oxide/nitride (NON) structure. The spacer is disposed between a sidewall of a bit line and a bit line contact and a sidewall of a storage node contact plug to reduce coupling capacitance between the bit line and a storage node contact plug and between the bit line contact and the storage node contact plug.

Abstract: A semiconductor device includes a spacer having a nitride/oxide/nitride (NON) structure. The spacer is disposed between a sidewall of a bit line and a bit line contact and a sidewall of a storage node contact plug to reduce coupling capacitance between the bit line and a storage node contact plug and between the bit line contact and the storage node contact plug.

Abstract: A semiconductor device includes a spacer having a nitride/oxide/nitride (NON) structure. The spacer is disposed between a sidewall of a bit line and a bit line contact and a sidewall of a storage node contact plug to reduce coupling capacitance between the bit line and a storage node contact plug and between the bit line contact and the storage node contact plug.

Abstract: A semiconductor device includes a spacer having a nitride/oxide/nitride (NON) structure. The spacer is disposed between a sidewall of a bit line and a bit line contact and a sidewall of a storage node contact plug to reduce coupling capacitance between the bit line and a storage node contact plug and between the bit line contact and the storage node contact plug.

Abstract: Disclosed is a method for testing the photoinduced domain switching of ferroelectric ceramics using AE. A ferroelectric ceramic specimen 4 was tested for the AE signal and photovoltaic current upon application of light. Light emanating from a xenon lamp 1 is focused into a specimen 4 through a waveguide 2 and a lens 3. Raw AE signals are detected through an AE sensor 5. The output signals from the AE sensor 5 are forwarded to a bandpass filter 7 which filtered the signals. Then, the AE signals are amplified by 40 dB by a pre-amplifier 8 and further by 30 dB by an AET 5500 system 10 which is connected to a computer 9 for analyzing the signals. The AE events which show a peak amplitude greater than or as great as a predetermined threshold voltage are counted with respect to an irradiation period of time, followed by calculating an occurrence rate of the AE event counts. From these data, the activity of the photoinduced domain switching can be qualitatively evaluated.