Abstract: Provided is a laser crystallization apparatus including a beam generator generating an input laser beam, a beam converter dividing an input laser beam incident from a beam generator into a plurality of sub laser beams and disposed to have a predetermined rotation angle with respect to an optical axis parallel to a traveling direction of an input laser beam, and a beam concentrator condensing a plurality of sub laser beams and outputting an output laser beam having a beam profile having a predetermined beam width. Accordingly, a width of a stiffness area of a beam profile of an input laser beam may increase and a width of a high intensity area may decrease. Accordingly, the number of shots for the stiffness area at specific point of an amorphous silicon film may increase. Accordingly, a gradual dehydrogenation effect on an amorphous silicon film may be implemented. Accordingly, occurrence of defects in a polycrystalline silicon film formed by laser crystallization may be minimized or prevented.

Abstract: A laser crystallization device includes: a first solid-state laser generator which generates a first solid-state laser having a first energy intensity; a second solid-state laser generator which generates a second solid-state laser having a second energy intensity lower than the first energy intensity; and a third solid-state laser generator which generates a third solid-state laser having a third energy intensity lower than the first energy intensity.

Abstract: A display device includes a first transistor, a second transistor electrically connected thereto, n third transistors electrically connected to a gate of the first transistor and connected to each other in series, a capacitor to be charged with a voltage corresponding to a data signal, and a light emitting element, wherein the third transistors include a semiconductor area including a channel area, a source area, a drain area, and a gate overlapping the channel area, wherein the source area or the drain area that is closer to the gate of the first transistor, and that is of the third transistor closest to the gate of the first transistor, includes a first area, and a second area between the first area and the channel area, having a doping concentration that is lower than that of the first area, and having a width that is less than that of the first area.