Abstract: A vehicle seat position adjustment device is configured to stably perform a tilting operation of a seat cushion by performing an operation of rotating a first tilting link hinged to a gear box in a standing direction of a first tilting link while the gear box is moved rearwards along a lead screw, an operation of pushing up a second tilting link hinged to the first tilting link while the first tilting link is rotated in a standing direction, and an operation of allowing the second tilting link to push up a front end of a seat cushion frame. The vehicle seat position adjustment device may achieve a relaxation comfort posture by tilting the seat cushion and simultaneously reclining a seatback connected to the seat cushion rearwards.

Abstract: A device for adjusting a position of a vehicle seat has a structure in which two or more adjustment devices, such as lead screws for adjusting tilting, are connected to the opposite side portions of a seat cushion frame to allow the lead screws to rotate by two gearboxes connected to one motor, so that a seat cushion is stably tilted by the two or more lead screws and the opposite side portions of the seat cushion frame is stably supported by the two or more lead screws, in order to prevent shaking, vibration, and torsional deformation caused by a gap generated when tilting the seat cushion frame.

Abstract: An apparatus of tilting a seat cushion of a vehicle, includes a tilting motor, a pinion gear, a sector gear, and a tilting link which perform the tilting operation of the seat cushion and exert a binding force in a tilted state of the seat cushion and are provided to be connected to both of one side and the other side of a seat cushion frame, and has two sector gears positioned on left and right sides and connected to each other by a connection bar so that, by strengthening a binding force of the front portion of the seat cushion, it is possible to secure the safety of passengers in the event of a collision.

Abstract: A method of fabricating a semiconductor light-emitting device is provided that includes forming a first conductivity-type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers grown at a first temperature and a plurality of quantum barrier layers grown at a second temperature higher than the first temperature, and forming a second conductivity-type semiconductor layer.

Abstract: A display device includes a display panel and a data driver. The display panel includes at least one gate line, at least two data lines, a display area including a pixel connected to the at least one gate line and the at least two data lines, and a peripheral area outside the display area, the peripheral area including a pair of fan-out wiring structures. The data driver is configured to apply data voltage to the at least two data lines. Each of the pair of fan-out wiring structures includes a bent structure, the bent structure of one of the pair of fan-out wiring structures includes the same material as the at least one gate line, and the bent structure of the remaining one of the pair of fan-out wiring structures includes the same material as the at least two data lines.

Abstract: The nitride semiconductor light emitting device includes a first conductivity-type nitride semiconductor layer, a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer, a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits, a second superlattice layer, an active layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer and filling the V-shaped pits. The second superlattice layer is disposed on the pit forming layer and has windings that have the same shape as a shape of windings generated by the V-shaped pits. The active layer is disposed on the second superlattice layer and has windings that have the same shape as the shape of the windings generated by the V-shaped pits.

Abstract: The nitride semiconductor light emitting device includes a first conductivity-type nitride semiconductor layer, a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer, a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits, a second superlattice layer, an active layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer and filling the V-shaped pits. The second superlattice layer is disposed on the pit forming layer and has windings that have the same shape as a shape of windings generated by the V-shaped pits. The active layer is disposed on the second superlattice layer and has windings that have the same shape as the shape of the windings generated by the V-shaped pits.

Abstract: A display device includes a display panel and a data driver. The display panel includes at least one gate line, at least two data lines, a display area including a pixel connected to the at least one gate line and the at least two data lines, and a peripheral area outside the display area, the peripheral area including a pair of fan-out wiring structures. The data driver is configured to apply data voltage to the at least two data lines. Each of the pair of fan-out wiring structures includes a bent structure, the bent structure of one of the pair of fan-out wiring structures includes the same material as the at least one gate line, and the bent structure of the remaining one of the pair of fan-out wiring structures includes the same material as the at least two data lines.

Abstract: A compound which is effective for inhibiting Fab I, and a method for treating a bacterial infection.