Abstract: A lamp for a vehicle allows a pedestrian to identify a state of the vehicle by displaying an emblem, logo, or driving status of the vehicle. The lamp for the vehicle includes a substrate; a light source unit including a plurality of light sources disposed on the substrate to generate light; a lens unit including a plurality of optical lenses through which the light is transmitted; and an imaging sheet on which the light transmitted through the plurality of optical lenses is projected to form a lighting image. In particular, each of the plurality of optical lenses is formed in a right triangle shape.

Abstract: A lamp for a vehicle allows a pedestrian to identify a state of the vehicle by displaying an emblem, logo, or driving status of the vehicle. The lamp for the vehicle includes a substrate; a light source unit including a plurality of light sources disposed on the substrate to generate light; a lens unit including a plurality of optical lenses through which the light is transmitted; and an imaging sheet on which the light transmitted through the plurality of optical lenses is projected to form a lighting image. In particular, each of the plurality of optical lenses is formed in a right triangle shape.

Abstract: A method for fabricating a nonvolatile memory device includes forming a gate insulation layer, a first gate conductive layer, a first sacrificial layer, and a second sacrificial layer over a substrate, etching the first and second sacrificial layers, the first gate conductive layer, the gate insulation layer, and the substrate to form trenches, forming a first insulation layer to fill the trenches, polishing the first insulation layer using the etched second sacrificial layer as a polish stop layer, removing the second sacrificial layer, recessing the first insulation layer inside the trenches, forming a second insulation layer to fill a space produced inside the trenches by the recessing of the first insulation layer, and polishing the second insulation layer using the etched first sacrificial layer as a polish stop layer.

Abstract: A method for fabricating a nonvolatile memory device includes forming a gate insulation layer, a first gate conductive layer, a first sacrificial layer, and a second sacrificial layer over a substrate, etching the first and second sacrificial layers, the first gate conductive layer, the gate insulation layer, and the substrate to form trenches, forming a first insulation layer to fill the trenches, polishing the first insulation layer using the etched second sacrificial layer as a polish stop layer, removing the second sacrificial layer, recessing the first insulation layer inside the trenches, forming a second insulation layer to fill a space produced inside the trenches by the recessing of the first insulation layer, and polishing the second insulation layer using the etched first sacrificial layer as a polish stop layer.

Abstract: A method for fabricating a nonvolatile memory device includes forming a gate insulation layer and a gate conductive layer for forming a floating gate over a substrate. A portion of the gate conductive layer, the gate insulation layer, and the substrate is etched to form a trench. An isolation structure is formed by filling in the trench. The isolation structure is recessed to a certain depth in the trench. A buffer layer is formed over the substrate structure. Spacers are formed over sidewalls of the buffer layer corresponding to inner sidewalls of the trench. A portion of the recessed isolation structure is etched to form a depression in the isolation structure using the spacers. The spacers are removed followed by removal of the buffer layer. A dielectric layer is formed over the substrate structure, and a control gate is formed over the dielectric layer.

Abstract: A method for fabricating a flash memory device includes providing a semi-finished substrate including a first polysilicon layer electrically isolated by an isolation structure. Recesses are formed in the isolation structure to partially expose sidewalls of the first polysilicon layer. A second polysilicon layer is formed over the exposed first polysilicon layer. Recesses are formed in a portion of the isolation structure not covered by the second polysilicon layer. A dielectric structure is formed over a resultant surface profile obtained after the recesses are formed in the isolation structure. A control gate is formed over the dielectric structure.