Patents by Inventor Dong-ha Lim

Dong-ha Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11340013
    Abstract: Provided are an apparatus and method for liquefying natural gas. The apparatus for liquefying natural gas includes a gas compressor configured to receive and compress the natural gas from a natural gas feed stream, a heat exchanging unit configured to cool a high-pressure natural gas passing through the gas compressor through heat exchange, an expansion valve configured to expand the cooled natural gas passing through the heat exchanging unit, a hold-up drum configured to phase-separate a gas-liquid mixture produced by passing through the expansion valve and divide the gas-liquid mixture into a liquefied natural gas and a cryogenic recycle gas having nitrogen content greater than that of the liquefied natural gas so as to discharge the liquefied natural gas and the cryogenic recycle gas, and a bypass line configured to provide the recycle gas discharged from the hold-up drum to the heat exchanging unit.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: May 24, 2022
    Assignees: SUNG-IL ENCARE Co., Ltd., KOGAS-TECH, Korea Institute of Industrial Technology
    Inventors: Jang-ik Park, Ta Kwan Woo, Taehee Kang, Heeseung Na, Hweeung Kwon, Gaehyun Nam, Young Cheol Lee, Dong-Ha Lim
  • Publication number: 20200208910
    Abstract: Provided are an apparatus and method for liquefying natural gas. The apparatus for liquefying natural gas includes a gas compressor configured to receive and compress the natural gas from a natural gas feed stream, a heat exchanging unit configured to cool a high-pressure natural gas passing through the gas compressor through heat exchange, an expansion valve configured to expand the cooled natural gas passing through the heat exchanging unit, a hold-up drum configured to phase-separate a gas-liquid mixture produced by passing through the expansion valve and divide the gas-liquid mixture into a liquefied natural gas and a cryogenic recycle gas having nitrogen content greater than that of the liquefied natural gas so as to discharge the liquefied natural gas and the cryogenic recycle gas, and a bypass line configured to provide the recycle gas discharged from the hold-up drum to the heat exchanging unit.
    Type: Application
    Filed: December 27, 2018
    Publication date: July 2, 2020
    Inventors: Jang-ik Park, TA KWAN WOO, TAEHEE KANG, HEESEUNG NA, HWEEUNG KWON, GAEHYUN NAM, Young Cheol Lee, Dong-Ha Lim
  • Publication number: 20070083282
    Abstract: A failover system for semiconductor equipment includes an equipment group including equipment units configured to fabricate a semiconductor device. The system also includes an equipment sever group including equipment servers which communicate with the equipment units about processing parameter data associated with one or more operations of the equipment units. The system also includes a host computer which communicates with the equipment server group about the processing parameter data associated with the one or more operations of the equipment units. The system also includes an operator interface computer which communicates with the host computer about information associated with the fabrication of the semiconductor device wherein the host computer includes a cure recipe, the cure recipe being used to resolve an event that interrupts at least one of the equipment units and to restart the interrupted equipment unit.
    Type: Application
    Filed: September 18, 2006
    Publication date: April 12, 2007
    Inventor: Dong-Ha Lim
  • Patent number: 6462331
    Abstract: An ion implantation apparatus for integrated circuit manufacturing is disclosed. In an apparatus in accordance with an embodiment of the invention, a current detector detects a current flowing to a turbo pump. A display displays information about the detected current, and a controller determines whether the detected current is within a specified range. If the detected current is not within the specified range, the controller issues a power control signal to, stop the turbo pump. At this time, the controller also stops an ion implantation of the apparatus.
    Type: Grant
    Filed: May 25, 1999
    Date of Patent: October 8, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sun-Bong Choi, Dong-Ha Lim, Hyo-Sang Jung, Sung-Kyu Han
  • Patent number: 6200903
    Abstract: A semiconductor device is manufactured by forming a thin layer over a semiconductor substrate, coating photoresist on the thin layer, forming a photoresist pattern over the semiconductor substrate, injecting ions into the photoresist pattern so as to harden the photoresist pattern, and etching the thin layer by using the hardened photoresist pattern as an etch mask. The hardened photoresist pattern has an increased etch selectivity with respect to an underlying layer, allowing the use of thinner photoresist layers and improved etching.
    Type: Grant
    Filed: September 20, 1999
    Date of Patent: March 13, 2001
    Assignee: Samsung Electronics, Co., Ltd.
    Inventors: Sang-kuen Oh, Sung-kyu Han, Yeon-sang Hwang, Dong-ha Lim, Jung-ki Kim