Abstract: A fingerprint sensing device including a plurality of pixel blocks is provided. The pixel blocks are arranged in an array. Each of the pixel blocks includes a conversion gain. At least two of the conversion gains are different, and the pixel block located in a central location of the array has a minimum conversion gain.

Abstract: An operating method of an image sensing device capable of detecting several light emitting diodes each having a flickering cycle time, the image sensing device includes several pixel circuits, each of the several pixel circuits includes a first sensing circuit and a second sensing circuit, the operating method including the following operations: operating the image sensing device in a first operating mode, including: sensing light by the first sensing circuit with a first exposure time longer than the flickering cycle time, thereby obtaining a first sensing result; sensing light, simultaneously by the first sensing circuit and the second sensing circuit with a second exposure time shorter than the flickering cycle time, thereby obtaining a second sensing result and a third sensing result; determining whether there is LED (light emitting diode) flickering or not according to the first sensing result, the second sensing result and the third sensing result.

Abstract: An operating method of an image sensing device capable of detecting several light emitting diodes each having a flickering cycle time, the image sensing device includes several pixel circuits, each of the several pixel circuits includes a first sensing circuit and a second sensing circuit, the operating method including the following operations: operating the image sensing device in a first operating mode, including: sensing light by the first sensing circuit with a first exposure time longer than the flickering cycle time, thereby obtaining a first sensing result; sensing light, simultaneously by the first sensing circuit and the second sensing circuit with a second exposure time shorter than the flickering cycle time, thereby obtaining a second sensing result and a third sensing result; determining whether there is LED (light emitting diode) flickering or not according to the first sensing result, the second sensing result and the third sensing result.

Abstract: An image sensing device including a plurality of pixel circuits arranged in an array and configured to sense images and temperatures is provided. Each of the pixel circuits includes a photo sensing device, a transmission gate transistor, a reset transistor and an output stage circuit. The first end of the transmission gate transistor is coupled to the first end of the photo sensing device. The second end of the photo sensing device is coupled to a first voltage or a second voltage. The first end of the reset transistor is coupled to a first power, a first current bias or a second current bias. The second end of the reset transistor is coupled to the second end of the transmission gate transistor. The input end of the output stage circuit is coupled to the second end of the reset transistor. The output end of the output stage circuit outputs a temperature sensing signal or an image sensing signal.

Abstract: An image sensing device including a plurality of pixel circuits arranged in an array and configured to sense images and temperatures is provided. Each of the pixel circuits includes a photo sensing device, a transmission gate transistor, a reset transistor and an output stage circuit. The first end of the transmission gate transistor is coupled to the first end of the photo sensing device. The second end of the photo sensing device is coupled to a first voltage or a second voltage. The first end of the reset transistor is coupled to a first power, a first current bias or a second current bias. The second end of the reset transistor is coupled to the second end of the transmission gate transistor. The input end of the output stage circuit is coupled to the second end of the reset transistor. The output end of the output stage circuit outputs a temperature sensing signal or an image sensing signal.

Abstract: A light sensing unit for a light sensing circuit of an image sensor includes a first light sensing element, a first floating node and at least one coupling element. The first light sensing element is used for sensing light to obtain a light sensing result and generating a plurality of carriers accordingly. The first floating node is used for receiving and storing the plurality of carriers generated by the first light sensing element. The at least one coupling element is used for coupling the first floating node to at least one second floating node, and transmitting a part of the plurality of carriers stored in the first floating node to the at least one second floating node to be stored in the at least one second floating node.

Abstract: A light sensing unit for a light sensing circuit of an image sensor includes a first light sensing element, a first floating node and at least one coupling element. The first light sensing element is used for sensing light to obtain a light sensing result and generating a plurality of carriers accordingly. The first floating node is used for receiving and storing the plurality of carriers generated by the first light sensing element. The at least one coupling element is used for coupling the first floating node to at least one second floating node, and transmitting a part of the plurality of carriers stored in the first floating node to the at least one second floating node to be stored in the at least one second floating node.

Abstract: A photo-sensing pixel circuit including a photo-sensing part, a transfer transistor, a plurality of adjustment transistors, and an output circuit is provided. The photo-sensing part senses a light source and generates a corresponding number of electrons. The transfer transistor coupled to the photo-sensing part has a floating node and converts the electrons generated by the photo-sensing part into a voltage signal. The adjustment transistors have a first end and a second end, wherein the first end is coupled to a power supply, and the second end is coupled to the transfer transistor via the floating node. The output circuit coupled to the transfer transistor outputs a sensing signal according to the voltage signal, wherein the sensing signal is corresponding to the brightness of the light source. The adjustment transistors operate in at least two operation modes. Different numbers of the adjustment transistors are turned on in different operation modes.

Abstract: A photo-sensing pixel circuit including a photo-sensing part, a transfer transistor, a plurality of adjustment transistors, and an output circuit is provided. The photo-sensing part senses a light source and generates a corresponding number of electrons. The transfer transistor coupled to the photo-sensing part has a floating node and converts the electrons generated by the photo-sensing part into a voltage signal. The adjustment transistors have a first end and a second end, wherein the first end is coupled to a power supply, and the second end is coupled to the transfer transistor via the floating node. The output circuit coupled to the transfer transistor outputs a sensing signal according to the voltage signal, wherein the sensing signal is corresponding to the brightness of the light source. The adjustment transistors operate in at least two operation modes. Different numbers of the adjustment transistors are turned on in different operation modes.

Abstract: An optical sensor and a method for manufacturing the same are provided. The optical sensor includes a first photosensitive layer, a first charge carrier collecting element, a second photosensitive layer and a second charge carrier collecting element. The first photosensitive layer has a first light incident surface. The first charge carrier collecting element is disposed on a surface of the first photosensitive layer opposite to the first light incident surface of the first photosensitive layer. The second photosensitive layer is adjacent to the first photosensitive layer and has a second light incident surface. The second charge carrier collecting element is disposed on a surface of the second photosensitive layer opposite to the second light incident surface of the second photosensitive layer.

Abstract: An optical sensor and a method for manufacturing the same are provided. The optical sensor includes a first photosensitive layer, a first charge carrier collecting element, a second photosensitive layer and a second charge carrier collecting element. The first photosensitive layer has a first light incident surface. The first charge carrier collecting element is disposed on a surface of the first photosensitive layer opposite to the first light incident surface of the first photosensitive layer. The second photosensitive layer is adjacent to the first photosensitive layer and has a second light incident surface. The second charge carrier collecting element is disposed on a surface of the second photosensitive layer opposite to the second light incident surface of the second photosensitive layer.