Abstract: A tape includes: a substrate, a conductive adhesive layer disposed on the substrate, and an insulating layer disposed on a part of a bonding surface of the conductive adhesive layer. The insulating layer is configured to insulate the conductive adhesive layer from a conducting part of an object to be bonded.

Abstract: Disclosed is a method of identifying dementia by at least one processor of a device. The method includes performing a first task that causes a first object to be displayed on a first region of a screen displayed on a user terminal; and when a preset condition is satisfied, performing a second task that causes at least one object, which induces the user's gaze, to be displayed instead of the first object on the screen of the user terminal.

Abstract: A method for processing contents at an electronic device is provided. The method includes generating a first content corresponding to a user input applied to content via the electronic device, and displaying a floating user interface (UI), which displays first scrap information on the first content, on a screen of the electronic device.

Abstract: A display device includes a data conductive layer including a first power line, a passivation layer with a first opening exposing the first power line, a via layer with a second opening partially overlapping the first opening, a pixel electrode on the via layer, a connection electrode in the first and second openings, a pixel-defining film with an opening overlapping the second opening, a light-emitting layer on the pixel-defining film, the pixel electrode and the connection electrode, and a common electrode connected to the first power line. The data conductive layer includes a data base layer, a data main metal layer, and a data capping layer, the first power line includes a wire connection structure, in which the data main metal layer is recessed from sides of the data capping layer, and the common electrode is connected to the data main metal layer in the wire connection structure.

Abstract: A transistor array substrate includes a substrate, an active layer disposed on the substrate and including a channel region, a source region and a drain region, a gate insulating layer disposed on a part of the active layer, a gate electrode overlapping the channel region of the active layer and included in an electrode conductive layer which is disposed on the gate insulating layer, a source electrode included in the electrode conductive layer and in contact with a part of the source region of the active layer, and a drain electrode included in the electrode conductive layer and in contact with a part of the drain region of the active layer. The active layer includes an oxide semiconductor including crystals and is disposed as an island shape excluding a hole in a plan view.

Abstract: A PUF apparatus comprises: a PUF cell array in which a plurality of PUF cells are arranged each including a FeFET pair whose gates are commonly connected to a corresponding word line among a plurality of word lines, and whose drains and sources are connected to a corresponding bit line pair and a corresponding source line pair among a plurality of bit line pairs and a plurality of source line pairs running in a direction crossing the plurality of word lines; and a read-write-back block which is activated according to a read enable signal, and senses and amplifies a voltage difference occurring in a corresponding bit line pair among the plurality of bit line pairs according to the difference in driving strength due to a deviation in a manufacturing process of the FeFET pair in the PUF cell selected by a selected word line among the plurality of word lines.

Abstract: A nonvolatile memory device according to the embodiment includes: a first inverter; and a second inverter cross-coupled to the first inverter, wherein the second inverter includes a pull-up transistor, a pull-down transistor, and a ferroelectric field effect transistor having gate nodes connected to each other, and a restore transistor having one electrode connected to the ferroelectric field effect transistor, and the second inverter stores data in a nonvolatile manner.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: A memory device, a host device and a memory system are provided. The memory device may include a plurality of storage units configured to store data, and at least one device controller configured to, receive a read command from at least one host device and to read data stored in the plurality of storage units in response to the read command, the at least one host device including at least one host memory including a plurality of HPB (high performance boosting) entry storage regions, and provide the at least one host device with a response command, the response command indicating an activation or deactivation of the plurality of HPB entry storage regions, the response command including HPB entry type information which indicates a HPB entry type of the HPB entry storage region.

Abstract: Disclosed are an emergency control method and system based on source-load-storage regulation and cutback. According to the method, output power of power generating sources is regulated according to a power regulating quantity and a frequency regulation requirement, an output power compensation and output frequency of each power generating source are maintained within permissible ranges, so that a balance between power supply and demand of a power distribution network is maintained; and standby energy-storage power stations are used to make up a power gap, and an external power supply system is used to assist in making up a power deficiency, so that large load disturbance can be handled make up the power gap.

Abstract: A display device includes a pixel. The pixel is electrically connected to a first power line, a second power line, and a data line. The pixel includes a first transistor, and a capacitor electrically connected between a gate electrode of the first transistor and an electrode of the first transistor. In a plan view, the data line extends in a second direction. The first power line extends in a first direction intersecting the second direction and overlaps the data line and the gate electrode of the first transistor. The second power line extends in the second direction, overlaps the data line, and overlaps the gate electrode of the first transistor.

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: An electronic device includes a CPU, an acceleration module, and a memory. The acceleration module is communicatively connected with the CPU, and includes chips. The chip according to an embodiment includes a data bus, and a memory, a data receiver, a computing and processing unit, and a data transmitter connected to the data bus. The data receiver receives first data and header information from outside, writes the first data to a corresponding area of the memory through the data bus, and configures a corresponding computing and processing unit and/or data transmitter according to the header information. The computing and processing unit receives first task information, performs an operation processing according to the first task information and a configuration operation on the data transmitter. The data transmitter obtains second task information and second data, and outputs third data to outside based on at least part of the second data.

Abstract: A method for fabricating a semiconductor device includes forming a trench in a substrate, forming a gate dielectric layer on a surface of the trench, forming a lower gate, which partially fills the trench, over the gate dielectric layer, forming a low work function layer over the lower gate, forming a spacer over the low work function layer, etching the low work function layer to be self-aligned with the spacer in order to form vertical gate on both upper edges of the lower gate, and forming an upper gate over the lower gate between inner sidewalls of the vertical gate.

Abstract: A method of identifying dementia is disclosed that includes causing a user terminal to display an N-th screen including a plurality of objects. The user terminal may further display an N+1-th screen with the objects rearranged at positions on the N+1-th screen which are different from positions of the objects included in the N-th screen when an N-th selection input of selecting any one from among the objects included in the N-th screen is received. When an N+1-th selection input for selecting any one from among the objects included in the N+1-th screen is received, a third task of determining whether an answer of the N+1-th selection input is correct is performed based on whether the object selected from the N+1-th selection input is the same as at least one object selected from at least one previous selection input including the N-th selection input.

Abstract: A liquid cooling device includes a base plate, a cooling body, and a cover plate. The cooling body includes a frame. A cooling layer is provided in the frame and a reflux layer is provided above the cooling layer. The cooling layer is provided with a plurality of cooling channels extending from a center portion of the cooling body to the frame. The reflux layer is provided with a plurality of reflux channels in communication with the plurality of cooling channels. A periphery of the reflux layer is provided with a drainage flow channel in communication with the plurality of the reflux channels. A center portion of the cover plate being provided with a liquid inlet in communication with the plurality of cooling channels, and the cover plate is further provided with a liquid outlet in communication with the drainage flow channel.

Abstract: An embodiment sulfur dioxide-based inorganic electrolyte is provided in which the sulfur dioxide-based inorganic electrolyte is represented by a chemical formula M·(A1·Cl(4-x)Fx)z·ySO2. In this formula, M is a first element selected from the group consisting of Li, Na, K, Ca, and Mg, A1 is a second element selected from the group consisting of Al, Fe, Ga, and Cu, x satisfies a first equation 0?x?4, y satisfies a second equation 0?y?6, and z satisfies a third equation 1?z?2.

Abstract: A seat-interlocking leg rest control system includes: a first actuator configured to move a seat for a vehicle, the seat including a seat cushion and a seatback, in a forward-backward direction or an upward-downward direction of the vehicle; a second actuator configured to rotate a leg rest, rotatably coupled to the front end portion of the seat cushion, in the upward-downward direction; and a controller connected to the first actuator and the second actuator to control operation of the second actuator such that the rotation angle of the leg rest is limited based on the position of the seat.

Abstract: Provided herein is a mechanism to controllably move a wire within a flexible tubular member, the wire including opposed wire ends extending outwardly of a proximal end of the flexible tubular member, comprising a drive mechanism and a coupling located between the drive mechanism and the wire end, wherein movement of the coupling in the direction of the wire end results in opposed motion of the wire end.

Abstract: The present disclosure is related to a perfusable-type bio-dual proximal tubule cell construct and a producing method thereof capable of applying an in vitro artificial organ model configured to include a first bioink comprising a decellularized substance derived from a mammalian kidney tissue and human umbilical vascular endothelial cells (HUVECs) and a second bioink comprising the decellularized substance and renal proximal tubular epithelial cells (RPTECs), wherein the first bioink and the second bioink are coaxial and printed in tubular constructs having different inner diameters. According to the present disclosure, it is possible to use the renal proximal tubule-on-a-chip as a bioreactor capable of observing a biological drug reaction similar to a real drug by perfusing various drugs to the renal proximal tubule-on-a-chip.