Abstract: The present disclosure relates to an interior material for a vehicle and a method for molding the interior material for the vehicle, and more specifically the method for molding an interior material for a vehicle according to the present disclosure includes heating a skin inserted into an upper end heater and a lower end heater spaced apart from each other; preforming the heated skin using an upper mold having a mold temperature set to have a set shape and a lower mold having a second mold temperature; and pressing the preformed skin and a core using a 1-1 mold and a 1-2 mold having set mold temperatures.

Abstract: An operation method of a wireless power receiver supporting an electromagnetic resonance mode and an electromagnetic induction mode according to an embodiment of the present invention may comprise the steps of: determining whether switching of a power transmission mode is necessary during wireless charging according to an electromagnetic induction mode; when switching of the power transmission mode is necessary, requesting a wireless power transmitter to switch the power transmission mode, by using extended charging termination information; and receiving power in a power transmission mode determined according to whether a connection has been established with the wireless power transmitter according to the electromagnetic resonance mode.

Abstract: The present invention relates to a method and an apparatus for switching a wireless power transmission mode.

Abstract: The present invention relates to a wireless power control method and a device therefor, and according to one embodiment of the present invention, a wireless power control method of a wireless power transmitter capable of wirelessly charging a plurality of wireless power receivers simultaneously can comprise the steps of: selecting a dominant receiver on the basis of state information received from the plurality of wireless power receivers; controlling power for the dominant receiver; and selecting a new dominant receiver on the basis of a power reception state change of the dominant receiver according to the power control.

Abstract: Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer comprising a well layer and a barrier layer on the first conductive layer, and a second conductive semiconductor layer on the active layer. The well layer includes a first well layer closest to the first conductive semiconductor layer and having a first energy bandgap, a third well layer closest to the second conductive semiconductor layer and having a third energy bandgap, and a second well layer interposed between the first and third well layers and having a second energy bandgap. The third energy bandgap of the third well layer is greater than the second energy bandgap of the second well layer.

Abstract: Embodiments disclose a method including forming at least one compound semiconductor layer on a top r-face of a substrate, forming a line for cleavage on a bottom r-face of the substrate along a length of a guide line, wherein the guide line extends in a (11-20)-plane direction of the substrate, wherein the guide line extends from one portion of an edge to another portion of the edge, and wherein the edge is disposed between the top r-face and the bottom r-face of the substrate, and applying a force to the bottom r-face of the substrate to cleave the substrate along the line for cleavage in the (11-20)-plane direction and to form a cleaved facet along a m-plane of the at least one compound semiconductor.

Abstract: Embodiments disclose a method including forming at least one compound semiconductor layer on a top r-face of a substrate, forming a line for cleavage on a bottom r-face of the substrate along a length of a guide line, wherein the guide line extends in a (11-22)-plane direction of the substrate, wherein the guide line extends from one portion of an edge to another portion of the edge, and wherein the edge is disposed between the top r-face and the bottom r-face of the substrate, and applying a force to the bottom r-face of the substrate to cleave the substrate along the line for cleavage in the (11-22)-plane direction and to form a cleaved facet along a c-plane of the at least one compound semiconductor.

Abstract: Embodiments disclose a method including forming at least one compound semiconductor layer on a top r-face of a substrate, forming a line for cleavage on a bottom r-face of the substrate along a length of a guide line, wherein the guide line extends in a (11-22)-plane direction of the substrate, wherein the guide line extends from one portion of an edge to another portion of the edge, and wherein the edge is disposed between the top r-face and the bottom r-face of the substrate, and applying a force to the bottom r-face of the substrate to cleave the substrate along the line for cleavage in the (11-22)-plane direction and to form a cleaved facet along a c-plane of the at least one compound semiconductor.

Abstract: Embodiments disclose a method including forming at least one compound semiconductor layer on a top r-face of a substrate, forming a line for cleavage on a bottom r-face of the substrate along a length of a guide line, wherein the guide line extends in a (11-20)-plane direction of the substrate, wherein the guide line extends from one portion of an edge to another portion of the edge, and wherein the edge is disposed between the top r-face and the bottom r-face of the substrate, and applying a force to the bottom r-face of the substrate to cleave the substrate along the line for cleavage in the (11-20)-plane direction and to form a cleaved facet along a m-plane of the at least one compound semiconductor.

Abstract: Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer comprising a well layer and a barrier layer on the first conductive layer, and a second conductive semiconductor layer on the active layer. The well layer includes a first well layer closest to the first conductive semiconductor layer and having a first energy bandgap, a third well layer closest to the second conductive semiconductor layer and having a third energy bandgap, and a second well layer interposed between the first and third well layers and having a second energy bandgap. The third energy bandgap of the third well layer is greater than the second energy bandgap of the second well layer.