Abstract: A substrate processing apparatus includes a support unit; a first nozzle for discharging a first rinse solution to a first area of the substrate; and a second nozzle for discharging a second rinse solution to a second area of the substrate, wherein the first nozzle discharges the first rinse solution to a first area during a first period so that the first area and the second area of the substrate are wetted by the first rinse solution, and some area of the substrate is not wetted by the first rinse solution, wherein the first nozzle discharges the first rinse solution to the first area and the second nozzle discharges the second rinse solution to the second area in a second period directly connected to the first period so that an entire upper surface of the substrate is wetted by the first rinse solution and the second rinse solution.

Abstract: A variable resistance memory device includes vertical electrodes vertically projecting from a substrate, first horizontal electrodes stacked along the vertical electrodes, second horizontal electrodes stacked along the vertical electrodes, and a variable resistance layer interposed between the vertical electrodes and the first and second horizontal electrodes, wherein the first and second horizontal electrodes are arranged in directions crossing with each other.

Abstract: A variable resistance memory device includes vertical electrodes vertically projecting from a substrate, first horizontal electrodes stacked along the vertical electrodes, second horizontal electrodes stacked along the vertical electrodes, and a variable resistance layer interposed between the vertical electrodes and the first and second horizontal electrodes, wherein the first and second horizontal electrodes are arranged in directions crossing with each other.

Abstract: A variable resistance memory device includes first electrodes, dielectric layer patterns vertically projecting from the first electrodes, variable resistance layer patterns surrounding side surfaces of the dielectric layer patterns and connected with the first electrodes, and second electrodes formed over the dielectric layer patterns and connected with the variable resistance layer patterns.