Patents by Inventor Dong-Ho Cha

Dong-Ho Cha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200227321
    Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.
    Type: Application
    Filed: March 30, 2020
    Publication date: July 16, 2020
    Inventors: Sung-Min KIM, Sunhom Steve PAAK, Heon-Jong SHIN, Dong-Ho CHA
  • Publication number: 20200203195
    Abstract: A wet etching system operating method includes providing an etching apparatus having an Nth etching solution, loading Nth batch substrates into the etching apparatus and performing an Nth etching process, discharging some of the Nth etching solution, refilling the etching apparatus with an (N+1)th etching solution supplied from a supply apparatus connected to the etching apparatus, and loading (N+1)th batch substrates into the etching apparatus and performing an (N+1)th etching process, wherein the (N+1)th etching solution has a temperature within or higher than a temperature management range of the (N+1)th etching process, and wherein the (N+1)th etching solution has a concentration within or higher than a concentration management range of the (N+1)th etching solution, N being a positive integer.
    Type: Application
    Filed: July 3, 2019
    Publication date: June 25, 2020
    Inventors: Sang Hoon JEONG, Yong Sun KO, Dong Ha KIM, Tae Heon KIM, Chang Sup MUN, Woo Gwan SHIM, Jun Youl YANG, Se Ho CHA
  • Publication number: 20200189340
    Abstract: A combinable and detachable vehicle includes: a front connecting portion and a rear connecting portion provided at a front portion and a rear portion of a vehicle, respectively, and connected to another vehicle when the vehicle is combined with the other vehicle; a front monitoring portion and a rear monitoring portion monitoring a forward area and a rearward area of the vehicle, respectively; and a controller determining whether the other vehicle is connected to the front connecting portion or the rear connecting portion of the vehicle based on information received from the front connecting portion or the rear connecting portion, or the front monitoring portion or the rear monitoring portion, and controlling whether to operate each of a front component and a rear component of the vehicle depending on a direction of the vehicle is connected to the other vehicle.
    Type: Application
    Filed: May 9, 2019
    Publication date: June 18, 2020
    Inventors: Dong Eun CHA, Jin Ho HWANG, Sang Heon LEE
  • Publication number: 20200180706
    Abstract: A user-assemblable vehicle including: a platform module forming a bottom surface of the vehicle, and including a floor part provided with a power driving part and front and rear wheel parts provided on front and rear parts of the floor part, respectively; a front module coupled to a front part of the platform module to form a front part of the vehicle; a rear module coupled to a rear part of the platform module to form a rear part of the vehicle; and a cabin module having a space for accommodating passengers, being coupled to a rear end of the front module at a front end and coupled to a front end of the rear module at a rear end, and supported by the floor part of the platform module at a lower end when the cabin module slides from a side to an opposite side of the vehicle.
    Type: Application
    Filed: April 2, 2019
    Publication date: June 11, 2020
    Inventors: Dong Eun CHA, Jin Ho HWANG, Sang Heon LEE
  • Patent number: 10678117
    Abstract: An optical phased array (OPA) may be included in a light detection and ranging (LiDAR) system and may be configured to perform beam steering. The OPA may include a cascading structure of splitters configured to enable a branch operation to be performed M times. Each splitter may split an input optical signal in a ratio of 1:1 and output the split input optical signal. The OPA may include a plurality of sets of first phase shifters (PSs), each set of first PSs located exclusively on one output end of a separate splitter, each set of first PSs including a particular quantity of first PSs based on a branch position at which the separate splitter is located. The OPA may be included in a LiDAR system that is further included in a vehicle that is configured to enable navigation of the vehicle, including autonomous navigation, through an environment.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: June 9, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-jae Shin, Hyun-il Byun, Kyoung-ho Ha, Seong-gu Kim, Jin-kwon Bok, Jung-ho Cha, Dong-hyun Kim, Yong-sang Park, Min-kyung Kim
  • Publication number: 20200164926
    Abstract: A joint member for coupling a chassis frame according to the present invention, which couples frames composing a chassis, includes a block-shaped main body and a first insertion groove into which one end portion of a first frame, which is a frame extending in a width direction of the chassis, is inserted and which is formed on one surface of the main body, and the plurality of first insertion grooves are formed in a longitudinal direction of the chassis so that a length of the chassis is changed according to a position at which the first frame is inserted.
    Type: Application
    Filed: December 6, 2018
    Publication date: May 28, 2020
    Inventors: Hyun Rok CHA, Myeong Hwan HWANG, Jong Ho HAN, Dong Hyun KIM, Gil Woo CHOI, Se Hyeon YANG, Gye Seong LEE, Hae Sol LEE
  • Patent number: 10643898
    Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: May 5, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Min Kim, Sunhom Steve Paak, Heon-Jong Shin, Dong-Ho Cha
  • Publication number: 20200089867
    Abstract: An authentication system and method are provided. The authentication method in accordance with one embodiment includes: storing a first authentication request message received from an authentication server, generating a new challenge using a previous challenge used in a previous authentication process when a network connection to the authentication server is not possible, generating a second and newer authentication request message by replacing a challenge included in the first authentication request message with the new challenge, generating an authentication assertion by performing biometric authentication using the second authentication request message and storing the generated authentication assertion.
    Type: Application
    Filed: September 17, 2019
    Publication date: March 19, 2020
    Inventors: Dong-Ho KIM, Seung-Hoon CHA, Pan-Young KIM, Jae-Hyuk CHO
  • Publication number: 20200013553
    Abstract: Provided are a multilayer ceramic electronic component and a method for manufacturing the same, the multilayer ceramic electronic component including a ceramic body including a dielectric layer and an internal electrode, and an external electrode formed on an outer side of the ceramic body and electrically connected to the internal electrode, wherein the internal electrode includes a conductive metal and an additive, and the number of particles of the additive disposed per ?m2 of the internal electrode is in the range of 7 to 21, both inclusive.
    Type: Application
    Filed: February 21, 2019
    Publication date: January 9, 2020
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Kyoung Jin CHA, Seung Heui LEE, Beom Seock OH, Kwang Sic KIM, Dong Hoon KIM, Jong Ho LEE, Seon Jae MUN
  • Patent number: 10483399
    Abstract: An integrated circuit (IC) device includes a pair of fin-shaped active areas that are adjacent to each other with a fin separation area therebetween, the pair of fin-shaped active areas extend in a line, and a fin separation insulating structure in the fin separation area, wherein the pair of fin-shaped active areas includes a first fin-shaped active area having a first corner defining part of the fin separation area, and wherein the fin separation insulating structure includes a lower insulating pattern that covers sidewalls of the pair of fin-shaped active areas, and an upper insulating pattern on the lower insulating pattern to cover at least part of the first corner, the upper insulating pattern having a top surface at a level higher than a top surface of each of the pair of fin-shaped active areas.
    Type: Grant
    Filed: October 3, 2018
    Date of Patent: November 19, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-yup Chung, Myung-yoon Um, Dong-ho Cha, Jung-gun You, Gi-gwan Park
  • Patent number: 10446207
    Abstract: A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register supporting a plurality of operational modes.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: October 15, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chan-kyung Kim, Dong-seok Kang, Hye-jin Kim, Chul-woo Park, Dong-hyun Sohn, Yun-sang Lee, Sang-beom Kang, Hyung-rock Oh, Soo-ho Cha
  • Publication number: 20190312147
    Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
    Type: Application
    Filed: December 24, 2018
    Publication date: October 10, 2019
    Inventors: Yong Su Lee, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na, Sang Ho Park, Se Hwan Yu, Chong Sup Chang, Dae Ho Kim, Jae Neung Kim, Myoung Geun Cha, Sang Gab Kim, Yu-Gwang Jeong
  • Patent number: 10403754
    Abstract: Semiconductor devices are provided. A semiconductor device includes a channel. The semiconductor device includes a gate structure having first and second portions. The channel is between the first and second portions of the gate structure. A contact structure is adjacent a portion of a side surface of the channel. Related methods of forming semiconductor devices are also provided.
    Type: Grant
    Filed: May 3, 2018
    Date of Patent: September 3, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Dae Suk, Sunhom Steve Paak, Yeon-Ho Park, Dong-Ho Cha
  • Publication number: 20190229492
    Abstract: A semiconductor laser device includes a first cladding including gallium nitride (GaN) on a substrate, a light waveguide on the first cladding, a first contact pattern, a first SCH pattern, a first active pattern, a second SCH pattern, a second cladding and a second contact pattern sequentially stacked on the light waveguide, and first and second electrodes on the first and second contact patterns, respectively.
    Type: Application
    Filed: October 5, 2018
    Publication date: July 25, 2019
    Inventors: Jung-Ho CHA, Seong-Gu KIM, Dong-Jae SHIN, Yong-Hwack SHIN, Kyoung-Ho HA
  • Publication number: 20190227403
    Abstract: An optical beam steering device may include a tunable laser diode configured to emit laser beams and an antenna that includes a grating structure and is configured to convert the laser beams to a linear light source based on the grating structure. The tunable laser diode may emit a first laser beam having a first wavelength, and emit a second laser beam having a second wavelength, the second wavelength different from the first wavelength. The antenna may receive the first laser beam and, in response, output a first linear light source having a first emission angle with a surface of the antenna. The antenna may further receive the second laser beam and, in response, output a second linear light source having a second emission angle with the surface of the antenna, the second emission angle different from the first angle.
    Type: Application
    Filed: July 23, 2018
    Publication date: July 25, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong Jae SHIN, Seong Gu KIM, Yong Hwack SHIN, Chang Gyun SHIN, Dong Sik SHIM, Chang Bum LEE, Jung Ho CHA, Kyoung Ho HA
  • Publication number: 20190227150
    Abstract: The bi-directional optical integrated circuit device array includes a plurality of bi-directional optical integrated circuit unit devices integrated on a substrate and arranged in two-dimensions. Each of the bi-directional optical integrated circuit unit devices includes a single wavelength laser light source integrated on the substrate, a bi-directional optical device integrated on the substrate and optically connected to the laser light source, and an antenna integrated on the substrate and optically connected to the bi-directional optical device.
    Type: Application
    Filed: October 3, 2018
    Publication date: July 25, 2019
    Inventors: Dong-jae SHIN, Kyoung-ho HA, Seong-gu KIM, Yong-hwack SHIN, Chang-gyun SHIN, Dong-sik SHIM, Chang-bum LEE, Jung-ho CHA
  • Patent number: 10361006
    Abstract: Provided is a laser welding apparatus for spacer grid of nuclear fuel assembly comprising a base frame in which a chamber installment hole is formed horizontally to the center in a way that the hole penetrates the chamber and a guide rail is installed along the chamber installment hole; a welding chamber unit assembled with the base frame in guidance by the guide rail and equipped with an operable door in front and a glass window at the top to be airtight; a laser welding unit mounted on the base frame for radiating laser through the glass window to weld spacer grid in the welding chamber; and a locking member for fixing the welding chamber on the base frame.
    Type: Grant
    Filed: March 20, 2015
    Date of Patent: July 23, 2019
    Assignee: KEPCO NUCLEAR FUEL CO., LTD.
    Inventors: Dong Kwang Shin, Byeong Eun Oh, Kwang Ho Yun, Sang Jae Han, Jong Sung Hong, Kwang Seok Cha, Wun Su Hong
  • Patent number: 10294207
    Abstract: Provided is pyrazole derivatives as a TNIK (Traf2- and NCK-interacting kinase), IKK? (I-kappa-B kinase epsilon) and TBK1 (TANK-binding kinase 1) inhibitor; the pyrazole derivative according to the present invention effectively inhibits TNIK, IKK? and TBK1, and thus is useful not only as an anticancer agent for the treatment of various cancers including colorectal cancer, breast cancer, CNS cancer, colon cancer, non-small cell lung cancer, kidney cancer, prostate cancer, ovarian cancer, uterus cancer, stomach cancer, liver cancer, skin cancer, lung cancer, brain cancer, bladder cancer, esophageal cancer, pancreatic cancer, thyroid cancer, head and neck cancer, squamous cell carcinoma, osteosarcoma, B-cell or T-cell lymphoma, acute or chronic leukemia and multiple myeloma, but as a therapeutic agent for chronic inflammation.
    Type: Grant
    Filed: March 29, 2016
    Date of Patent: May 21, 2019
    Assignee: GREEN CROSS CORPORATION
    Inventors: Soongyu Choi, Kisoo Park, Hee Jeong Seo, Eun-Jung Park, Younggyu Kong, Ickhwan Son, Sang-ho Ma, Kwang-Seop Song, Min Ju Kim, So Ok Park, Man-Young Cha, Mi-Soon Kim, Sang Mi Kang, Dong Hyuk Jang, Jangwon Hong
  • Publication number: 20190142543
    Abstract: The present invention relates to an end effector having a line laser mounted therein, comprising: a main body forming the body of an end effector; a support part installed in the main body and supporting needle guide apparatuses for guiding a needle; a line laser part installed on one side and the other side of the support part, and emitting line laser beams so as to mark a needle insertion point for inserting the needle into a lesion of a patient; and a guide part for guiding the line laser beams emitted from the line laser part so as to cross the line laser beams, wherein the line laser part emits the line laser beams via the guide part such that the needle insertion point is marked at a predetermined distance away from the needle guide apparatus.
    Type: Application
    Filed: June 20, 2017
    Publication date: May 16, 2019
    Inventors: Yong Yeob CHA, Heung Soon LIM, Dong Gi WOO, Han Cheol CHOI, Hong Ho KIM
  • Publication number: 20190051566
    Abstract: A semiconductor device includes a first fin-type pattern and a second fin-type pattern which protrude upwardly from an upper surface of a field insulating film and extend in a first direction. A gate structure intersects the first fin-type pattern and the second fin-type pattern. A first epitaxial layer is on the first fin-type pattern on at least one side of the gate structure, and a second epitaxial layer is on the second fin-type pattern on at least one side of the gate structure. A metal contact covers outer circumferential surfaces of the first epitaxial layer and the second epitaxial layer. The first epitaxial layer contacts the second epitaxial layer.
    Type: Application
    Filed: October 17, 2018
    Publication date: February 14, 2019
    Inventors: Sung-Min Kim, Ji-Su Kang, Byung-Chan Ryu, Jae-Hyun Park, Yu-Ri Lee, Dong-Ho Cha